Search Results - "Jain, F."

Low-Threshold II–VI Lattice-Matched SWS-FETs for Multivalued Low-Power Logic by Jain, F., Saman, B., Gudlavalleti, R., Mays, R., Chandy, J., Heller, E.

“…The aim of this paper is to design low-threshold variation, four-state/two-bit Si/SiGe quantum-well n - and p -channel spatial wavefunction-switched…”
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Promoting resilience in healthcare workers during the COVID-19 pandemic with a brief online intervention by DeTore, N.R., Sylvia, L., Park, E.R., Burke, A., Levison, J.H., Shannon, A., Choi, K.W., Jain, F.A., Coman, D.C., Herman, J., Perlis, R., Fava, M., Holt, D.J.

“…The psychological wellbeing of healthcare workers has been impacted by the high levels of stress many have experienced during the Coronavirus Disease 2019…”
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Risk factors for mental health symptoms during the COVID-19 pandemic in ophthalmic personnel and students in USA (& Canada): a cross-sectional survey study by Pang, Yi, Li, Meng, Robbs, Connor, Wang, Jingyun, Jain, Samiksha F, Ticho, Ben, Green, Katherine, Suh, Donny

“…Abstract Background The COVID-19 pandemic poses mental health challenges to frontline healthcare workers. Eye care professionals may be especially susceptible…”
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Ge-ZnSSe Spatial Wavefunction Switched (SWS) FETs to Implement Multibit SRAMs and Novel Quaternary Logic by Gogna, P., Suarez, E., Lingalugari, M., Chandy, J., Heller, E., Hasaneen, E.-S., Jain, F.-C.

“…This paper describes novel multibit static random-access memories (SRAMs) implemented using four-channel spatial wavefunction switched field-effect transistors…”
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Quantum Dot Channel (QDC) FETs with Wraparound II–VI Gate Insulators: Numerical Simulations by Jain, F., Lingalugari, M., Kondo, J., Mirdha, P., Suarez, E., Chandy, J., Heller, E.

“…This paper presents simulations predicting the feasibility of 9-nm wraparound quantum dot channel (QDC) field-effect transistors (FETs). In particular, II–VI…”
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A rare case of focal choroidal excavation associated choroidal neovascularization in angioid streaks by Jain, F, Manayath, George, Narendran, V, Saravanan, V, Kumarasamy, Karan, Appanraj, Ramya

“…The purpose is to report a case of focal choroidal excavation (FCE) in a patient with angioid streaks (ASs) associated with secondary choroidal…”
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Novel Multistate Quantum Dot Gate FETs Using SiO2 and Lattice-Matched ZnS-ZnMgS-ZnS as Gate Insulators by Lingalugari, M., Baskar, K., Chan, P.-Y., Dufilie, P., Suarez, E., Chandy, J., Heller, E., Jain, F. C.

“…Multistate behavior has been achieved in quantum dot gate field-effect transistor (QDGFET) configurations using either SiO x -cladded Si or GeO x -cladded Ge…”
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An Investigation of Quantum Dot Super Lattice Use in Nonvolatile Memory and Transistors by Mirdha, P., Parthasarathy, B., Kondo, J., Chan, P.-Y., Heller, E., Jain, F. C.

“…Site-specific self-assembled colloidal quantum dots (QDs) will deposit in two layers only on p -type substrate to form a QD superlattice (QDSL). The QDSL…”
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Quantum Dot Channel (QDC) Field-Effect Transistors (FETs) Using II–VI Barrier Layers by Jain, F., Karmakar, S., Chan, P.-Y., Suarez, E., Gogna, M., Chandy, J., Heller, E.

“…This paper describes fabrication and modeling of quantum dot channel (QDC) field-effect transistors (FETs). A QDC-FET comprises an array of thin-barrier…”
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Spatial Wavefunction-Switched (SWS) InGaAs FETs with II–VI Gate Insulators by Jain, F. C., Miller, B., Suarez, E., Chan, P.-Y., Karmakar, S., Al-Amoody, F., Gogna, M., Chandy, J., Heller, E.

“…This paper presents the implementation of a novel InGaAs field-effect transistor (FET), using a ZnSe-ZnS-ZnMgS-ZnS stacked gate insulator, in a spatial…”
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Novel Quantum Dot Gate FETs and Nonvolatile Memories Using Lattice-Matched II–VI Gate Insulators by Jain, F. C., Suarez, E., Gogna, M., Alamoody, F., Butkiewicus, D., Hohner, R., Liaskas, T., Karmakar, S., Chan, P.-Y., Miller, B., Chandy, J., Heller, E.

“…This paper presents the successful use of ZnS/ZnMgS and other II–VI layers (lattice-matched or pseudomorphic) as high- k gate dielectrics in the fabrication of…”
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The role of H2O2 outer diffusion on the performance of implantable glucose sensors by VADDIRAJU, S, BURGESS, D. J, JAIN, F. C, PAPADIMITRAKOPOULOS, F

“…The performance of an implantable glucose sensor is strongly dependent on the ability of their outer membrane to govern the diffusion of the various…”
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Quantum Dot Channel (QDC) Field Effect Transistors (FETs) and Floating Gate Nonvolatile Memory Cells by Kondo, J., Lingalugari, M., Chan, P.-Y., Heller, E., Jain, F.

“…This paper presents silicon quantum dot channel (QDC) field effect transistors (FETs) and floating gate nonvolatile memory structures. The QDC-FET operation is…”
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Si and InGaAs Spatial Wavefunction-Switched (SWS) FETs with II–VI Gate Insulators: An Approach to the Design and Integration of Two-Bit SRAMs and Binary CMOS Logic by Jain, F., Chan, P.-Y., Lingalugari, M., Kondo, J., Suarez, E., Gogna, P., Chandy, J., Heller, E.

“…Electron wavefunctions are switched spatially from one quantum well to another by varying the gate voltage V g in spatial wavefunction-switched (SWS)…”
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Voltage-Dependent Charge Storage in Cladded Zn0.56Cd0.44Se Quantum Dot MOS Capacitors for Multibit Memory Applications by Khan, J., Lingalugari, M., Al-Amoody, F., Jain, F.

“…As conventional memories approach scaling limitations, new storage methods must be utilized to increase Si yield and produce higher on-chip memory density. Use…”
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Fabrication and Simulation of InGaAs Field-Effect Transistors with II–VI Tunneling Insulators by Suarez, E., Chan, P.-Y., Gogna, M., Ayers, J.E., Heller, E., Jain, F.

“…This study shows the use of a high- κ ZnS/ZnMgS/ZnS heteroepitaxial tunneling layer in an InGaAs field-effect transistor. Experimental fabrication and…”
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Fabrication and Simulation of an Indium Gallium Arsenide Quantum-Dot-Gate Field-Effect Transistor (QDG-FET) with ZnMgS as a Tunnel Gate Insulator by Chan, P.-Y., Gogna, M., Suarez, E., Al-Amoody, F., Karmakar, S., Miller, B. I., Heller, E. K., Ayers, J. E., Jain, F. C.

“…An indium gallium arsenide quantum-dot-gate field-effect transistor using Zn 0.95 Mg 0.05 S as the gate insulator is presented in this paper, showing three…”
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S-Graded Buffer Layers for Lattice-Mismatched Heteroepitaxial Devices by Xhurxhi, S., Obst, F., Sidoti, D., Bertoli, B., Kujofsa, T., Cheruku, S., Correa, J. P., Rago, P. B., Suarez, E. N., Jain, F. C., Ayers, J. E.

“…We have conducted a theoretical study of the equilibrium strain and misfit dislocation density profiles for “S-graded” buffer layers of In x Ga 1− x As on GaAs…”
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Indium Gallium Arsenide Quantum Dot Gate Field-Effect Transistor Using II–VI Tunnel Insulators Showing Three-State Behavior by Chan, P.-Y., Suarez, E., Gogna, M., Miller, B.I., Heller, E.K., Ayers, J.E., Jain, F.C.

“…This paper presents an indium gallium arsenide (InGaAs) quantum dot gate field-effect transistor (QDG-FET) that exhibits an intermediate “ i ” state in…”
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Effect of Epilayer Tilt on Dynamical X-ray Diffraction from Uniform Heterostructures with Asymmetric Dislocation Densities by Rago, P.B., Jain, F.C., Ayers, J.E.

“…In this work we extend the dynamical theory of Bragg x-ray diffraction to account for a tilted, asymmetrically defected, uniform-composition epitaxial layer…”
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