Search Results - "Jahnes, C. V."

Improved DC and RF performance in Si/SiGe n-MODFETs with ion-implanted buried p-well doping by Koester, S.J., Saenger, K.L., Chu, J.O., Ouyang, Q.C., Ott, J.A., Canaperi, D.F., Tornello, J.A., Jahnes, C.V.

“…The dc and RF characteristics of Si/SiGe n-MODFETs with buried p-well doping incorporated by ion implantation are reported. At a drain-to-source biasV/sub ds/…”
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Laterally scaled Si-Si0.7Ge0.3 n-MODFETs with fmax > 200 GHz and low operating bias by KOESTER, S. J, SAENGER, K. L, CHU, J. O, OUYANG, Q. C, OTT, J. A, JENKINS, K. A, CANAPERI, D. F, TORNELLO, J. A, JAHNES, C. V, STEEN, S. E

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High susceptibility domain configuration in micron-sized ferromagnetic stripes by Petek, B., Chang, J.-W., Jahnes, C.V., Lo, J., Trouilloud, P.L.

“…The authors report on a newly discovered domain configuration, observed with a magnetooptical microscope, in narrow stripes of NiCoFe, CoFeCu and NiFe. The…”
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Thin film disks with transient metal underlayers by Mirzamaani, M., Jahnes, C.V., Russak, M.A.

“…A novel technique for fabricating thin-film disk media with controlled surface roughness and bulk magnetic properties is described. This technique uses a…”
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Simple model of the high frequency permeability of narrow thin-film structures with eddy currents, walls, and saturation by Webb, B.C., Re, M.E., Jahnes, C.V., Russak, M.A.

“…The authors report the derivation and experimental verification of a simple model of the high-frequency permeability of narrow soft-magnetic thin-film…”
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The high field, high frequency permeability of narrow, thin-film magnetic stripes by Webb, B.C., Re, M.E., Jahnes, C.V., Russak, M.A.

“…The authors report measurements of the magnetic response of arrays of narrow Permalloy stripes using a high field permeameter. The permeameter operates in a…”
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Masking technique for thin-film corrosion specimens to minimize crevice corrosion by Frankel, G S, Jahnes, C V, Russak, M A

“…The pitting characteristics of sputtered thin films of aluminum and aluminum binary alloys are presented. These alloys have up to 40% solute in solid solution…”
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Simultaneous fabrication of RF MEMS switches and resonators using copper-based CMOS interconnect manufacturing methods by Jahnes, C.V., Cotte, J., Lund, J.L., Deligianni, H., Chinthakindi, A., Buchwalter, L.P., Fryer, P., Tornello, J.A., Hoivik, N., Magerlein, J.H., Seeger, D.

“…This paper describes the successful concurrent fabrication of micro-electro-mechanical (MEM) electrostatic switches and resonators on the same wafer. Base…”
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Silicon Photonic Switches Hybrid-Integrated With CMOS Drivers by Rylyakov, A. V., Schow, C. L., Lee, B. G., Green, W. M. J., Assefa, S., Doany, F. E., Yang, M., Van Campenhout, J., Jahnes, C. V., Kash, J. A., Vlasov, Y. A.

“…This paper describes the design and measured performance of three different silicon photonic switches: a 2×2 switch, a 1×2 switch, and a 4×4 switch. All of the…”
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Laterally-scaled Si/SiGe n-MODFETs with in situ and ion-implanted p-well doping by Koester, S.J., Saenger, K.L., Chu, J.O., Ouyang, Q.C., Ott, J.A., Canaperi, D.F., Tornello, J.A., Jahnes, C.V., Steen, S.E.

“…In order to fulfill their potential for enhanced performance, MODFETs must be scaled, both laterally and vertically. However, lateral scaling is particularly…”
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200 mm wafer-scale integration of sub-20 nm sacrificial nanofluidic channels for manipulating and imaging single DNA molecules by Wang, C., Nam, S. W., Cotte, J. M., Peng, H., Jahnes, C. V., Wang, D., Bruce, R., Guillorn, M., Gignac, L. M., Advocate, W. H., Breslin, C. M., Brink, M., Bucchignano, J., Duch, E. A., Galan, A., Kratschmer, E., Litwinowicz, P. J., Lofaro, M. F., Price, W., Rossnagel, S. M., Goldblatt, R. D., Joseph, E. A., Pfeiffer, D., Rao, S. Papa, Royyuru, A., Stolovitzky, G. A., Colgan, E. G., Lin, Q., Polonsky, S.

“…We report sub-20 nm sacrificial nanochannels that enable stretching and translocating single DNA molecules. Sacrificial silicon nano-structures were etched…”
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Demonstration of a Digital CMOS Driver Codesigned and Integrated With a Broadband Silicon Photonic Switch by Lee, B G, Schow, C L, Rylyakov, A V, Van Campenhout, J V, Green, W M J, Assefa, S, Doany, F E, Min Yang, John, R A, Jahnes, C V, Kash, J A, Vlasov, Y A

“…A custom 90-nm bulk digital CMOS switch driver is codesigned and integrated with a silicon photonic switch. A photonic device model is created within the…”
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20-μm-pitch eight-channel monolithic fiber array coupling 160 Gb/s/channel to silicon nanophotonic chip by Lee, B G, Doany, F E, Assefa, S, Green, W, Yang, M, Schow, C L, Jahnes, C V, Zhang, S, Singer, J, Kopp, V I, Kash, J A, Vlasov, Y A

“…A multichannel tapered coupler interfacing standard 250-μm-pitch low-NA polarization-maintaining fiber arrays with ultra-dense 20-μm-pitch high-NA silicon…”
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Broadband silicon photonic switch integrated with CMOS drive electronics by Lee, B G, Van Campenhout, J, Rylyakov, A V, Schow, C L, Green, W, Assefa, S, Yang, M, Doany, F E, Jahnes, C V, John, R A, Kash, J A, Vlasov, Y A

“…A CMOS driver and broadband silicon photonic switch are co-designed and wire-bond packaged. The integrated switch demonstrates less than 2.1-ns transition…”
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Magnetics and microstructure of sputtered Ni80Fe20/SiO2 multilayer films by RUSSAK, M. A, JAHNES, C. V, RE, M. E, WEBB, B. C, MOHAMAAD MIRZAMAANI, S

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Ion beam sputter deposited Permalloy thin films by Jahnes, C.V., Russak, M.A., Petek, B., Klokholm, E.

“…Ni/sub 80/Fe/sub 20/ thin films were deposited using a wide range of process parameters in a dual source ion beam sputter deposition system. The films were…”
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Laterally scaled Si-Si sub(0.7)Ge sub(0.3) n-MODFETs with f sub(max)>200 GHz and low operating bias by Koester, S J, Saenger, K L, Chu, JO, Ouyang, Q C, Ott, JA, Jenkins, KA, Canaperi, D F, Tornello, JA, Jahnes, C V, Steen, SE

“…We report on the dc and RF characterization of laterally scaled, Si-SiGe n-MODFETs. Devices with gate length, L sub(g), of 80 nm had f sub(T)=79 GHz and f…”
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Laterally scaled Si-Si/sub 0.7/Ge/sub 0.3/ n-MODFETs with f/sub max/>200 GHz and low operating bias by Koester, S.J., Saenger, K.L., Chu, J.O., Ouyang, Q.C., Ott, J.A., Jenkins, K.A., Canaperi, D.F., Tornello, J.A., Jahnes, C.V., Steen, S.E.

“…We report on the dc and RF characterization of laterally scaled, Si-SiGe n-MODFETs. Devices with gate length, L/sub g/, of 80 nm had f/sub T/=79 GHz and f/sub…”
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Planar MEMS RF capacitor integration by Stamper, A. K., Jahnes, C. V., Dupuis, S. R., Gupta, A., He, Z.-X, Herrin, R. T., Luce, S. E., Maling, J., Miga, D. R., Murphy, W. J., White, E. J., Cunningham, S. J., DeReus, D. R., Vitomirov, I., Morris, A. S.

“…MEMS capacitor switches have been integrated with high voltage CMOS ICs. The MEMS were formed with the final three AlCu wiring levels in SiO 2 using a planar…”
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High-efficiency 60 GHZ antenna fabricated using low-cost silicon micromachining techniques by Hoivik, N., Liu, D., Jahnes, C.V., Cotte, J.M., Tsang, C., Patel, C., Pfeiffer, U., Grzyb, J., Knickerbocker, J., Magerlein, J.H., Gaucher, B.

“…In this paper, a miniature, multi-functional Si-based packaging technology which can reduce the size and cost and increase the performance of a wide range of…”
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