Search Results - "Jagueneau, T."

Study of the plasma and cleaning impact on a CoWPB material by Rébiscoul, D., Desre, H., Dumas, L., Jagueneau, T., Roure, M.-C., Passemard, G.

“…Self-aligned barriers (SAB) are investigated for the 45 nm technology node and beyond to improve copper electromigration and stress-migration resistance. The…”
Get full text

230 GHz self-aligned SiGeC HBT for 90 nm BiCMOS technology by Chevalier, P., Fellous, C., Rubaldo, L., Dutartre, D., Laurens, M., Jagueneau, T., Leverd, F., Bord, S., Richard, C., Lenoble, D., Bonnouvrier, J., Marty, M., Perrotin, A., Gloria, D., Saguin, F., Barbalat, B., Beerkens, R., Zerounian, N., Aniel, F., Chantre, A.

“…This paper describes a 230 GHz self-aligned SiGeC HBT featuring a selective epitaxial base and an arsenic-doped monocrystalline emitter. These technical…”
Get full text

Demonstration of three-dimensional 35nF/mm2 MIM Capacitor integrated in BiCMOS Circuits by Giraudin, J.C., Badets, F., Blanc, J.P., Chataigner, E., Bajolet, A., Jagueneau, T., Rossato, C., Delpech, P.

“…This paper summarizes the electrical characterization of MIM capacitor realized in three-dimensional. High density of 35nF/mm 2 is obtained with low leakage…”
Get full text

Three-dimensional 35 nF/mm/sup 2/ MIM capacitors integrated in BiCMOS technology by Bajolet, A., Giraudin, J.C., Rossato, C., Pinzelli, L., Bruyere, S., Cremer, S., Jagueneau, T., Delpech, P., Montes, L., Ghibaudo, G.

“…Decoupling applications require high capacitance values. To optimize the chip performances, it appears particularly interesting to integrate them directly in…”
Get full text

Deep trench isolation effect on self-heating and RF performances of SiGeC HBTs by Barbalat, B., Schwartzmann, T., Chevalier, P., Jagueneau, T., Vandelle, B., Rubaldo, L., Saguin, F., Zerounian, N., Aniel, F., Chantre, A.

“…This paper focuses on the effect of deep trench isolation (DTI) on self-heating and electrical performances of state-of-the-art SiGeC heterojunction bipolar…”
Get full text

300 GHz f/sub max/ self-aligned SiGeC HBT optimized towards CMOS compatiblity by Chevalier, P., Barbalat, B., Rubaldo, L., Vandelle, B., Dutartre, D., Bouillon, P., Jagueneau, T., Richard, C., Saguin, F., Margain, A., Chantre, A.

“…This paper summarizes the work carried out to improve performances of a SiGeC HBT featuring a selective epitaxial base and an arsenic-doped monocrystalline…”
Get full text

Fully Optimized Cu based process with dedicated cavity etch for 1.75μm and 1.45μm pixel pitch CMOS Image Sensors by Cohen, M., Roy, F., Herault, D., Cazaux, Y., Gandolfi, A., Reynard, J.P., Cowache, C., Bruno, E., Girault, T., Vaillant, J., Barbier, F., Sanchez, Y., Hotellier, N., LeBorgne, O., Augier, C., Inard, A., Jagueneau, T., Zinck, C., Michailos, J., Mazaleyrat, E.

“…An innovative process development for sub-2μm CMOS imager sensors is described, leading to tremendous improvements on main pixel parameters like conversion…”
Get full text