Synthesis, characterization and optoelectronic application of Bi2Se3 thin film prepared by thermal evaporation technique
Recently, semiconducting transition metal chalcogenides (TMCs) have shown great potential for applications in the field of optoelectronics owing to their strong light absorption in broad spectral range. Photodetectors based on layered TMCs have captivated tremendous attention for the substitute of t...
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| Published in: | Optical materials Vol. 136; p. 113403 |
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| Main Authors: | , , , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
Elsevier B.V
01-02-2023
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| Subjects: | |
| Online Access: | Get full text |
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| Summary: | Recently, semiconducting transition metal chalcogenides (TMCs) have shown great potential for applications in the field of optoelectronics owing to their strong light absorption in broad spectral range. Photodetectors based on layered TMCs have captivated tremendous attention for the substitute of the silicon based materials. Herein, we demonstrate the fabrication of large area photodetector based on thermally evaporated Bi2Se3 thin film for visible light detection. This thin film has thickness of 5000 Å and highly crystalline structure with (006) prominent orientation. Photodetector based on Bi2Se3 thin film shows excellent light sensitivity in broad spectral range from 485 to 670 nm. The photocurrent of as high as 50.96 μA and photo responsivity of 2.12 mA/W are achieved under white light of 100 mW/cm2 power intensity. Additionally, the photodetector shows excellent stability towards pulse photoresponse for large number of cycles of light pulse owing to stable nature of Bi2Se3 thin film. Present study reports the development of Bi2Se3 thin film as light harvesting materials for futuristic opto-electronic devices for pollution free energy by utilizing Sun-light.
•Bi2Se3 thin films with the different substrate were grown using thermal evaporation technique.•Basic charecterization like EDAX, XRD and SEM were done for structural and morphological study.•Resonance corresponds to A1g1, E2g, and A2g2 were confirmed by RAMAN spectroscopy. Continuity of film was confirmed after the analyzing thin film by SEM.•The optical bandgap of the film was calculated using Kubelka munk function and it is 1.54 eV. 2D and 3D surface topography is observed by AFM.•The white light illumination with 100 mW/cm2 photodetector shows good photoresponse having responsivity 2.12 mA/W and detectivity 0.554 × 10−9 Jones at zero bias. |
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| ISSN: | 0925-3467 1873-1252 |
| DOI: | 10.1016/j.optmat.2022.113403 |