Search Results - "Jaeger, B. De"

Diffusion, activation, and recrystallization of boron implanted in preamorphized and crystalline germanium by Satta, A., Simoen, E., Clarysse, T., Janssens, T., Benedetti, A., De Jaeger, B., Meuris, M., Vandervorst, W.

“…We have investigated diffusion and activation of boron implanted with 6 keV energy to a maximum concentration of 8.0×1020atoms∕cm3 in crystalline germanium…”
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Impact of Donor Concentration, Electric Field, and Temperature Effects on the Leakage Current in Germanium p +/n Junctions by Eneman, G., Wiot, M., Brugere, A., Casain, O.S.I., Sonde, S., Brunco, D.P., De Jaeger, B., Satta, A., Hellings, G., De Meyer, K., Claeys, C., Meuris, M., Heyns, M.M., Simoen, E.

“…This paper presents an analysis of junction leakage in heavily doped p+/n germanium junctions, targeted for short-channel transistor fabrication. There exists…”
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Deposition of HfO2 on germanium and the impact of surface pretreatments by Van Elshocht, S., Brijs, B., Caymax, M., Conard, T., Chiarella, T., De Gendt, S., De Jaeger, B., Kubicek, S., Meuris, M., Onsia, B., Richard, O., Teerlinck, I., Van Steenbergen, J., Zhao, C., Heyns, M.

“…The deposition behavior of HfO2 by metalorganic chemical vapor deposition on germanium has been investigated. HfO2 films can be deposited on Ge with equally…”
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Effect of hafnium germanate formation on the interface of HfO2/germanium metal oxide semiconductor devices by Van Elshocht, S., Caymax, M., Conard, T., De Gendt, S., Hoflijk, I., Houssa, M., De Jaeger, B., Van Steenbergen, J., Heyns, M., Meuris, M.

“…We have studied the thermal stability of HfO2 thin layers on germanium and the substrate interface development. HfO2 was deposited on Ge substrates and…”
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Negative affect symptoms, anxiety sensitivity, and vasomotor symptoms during perimenopause by Jaeger, Marianna de B, Miná, Camila S, Alves, Sofia, Schuh, Gabriela J, Wender, Maria C, Manfro, Gisele G

“…Vasomotor symptoms affect 60-80% of women during the menopausal transition. Anxiety, depression, and anxiety sensitivity can have an important role in the…”
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Manufacturing Challenges of GaN-on-Si HEMTs in a 200 mm CMOS Fab by Marcon, D., De Jaeger, B., Halder, S., Vranckx, N., Mannaert, G., Van Hove, M., Decoutere, S.

“…In this paper, we report on the challenges related to growth and processing of 200 mm GaN-on-Si wafers in a CMOS fab. We describe the Au free process we…”
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Defect assessment and leakage control in Ge junctions by Gonzalez, M.B., Simoen, E., Eneman, G., De Jaeger, B., Wang, G., Loo, R., Claeys, C.

“…[Display omitted] •The impact of electrically active defects on the electrical characteristics of Ge in STI Si diodes has been investigated.•The presence of…”
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Ion-implantation issues in the formation of shallow junctions in germanium by Simoen, E., Satta, A., D’Amore, A., Janssens, T., Clarysse, T., Martens, K., De Jaeger, B., Benedetti, A., Hoflijk, I., Brijs, B., Meuris, M., Vandervorst, W.

“…This paper provides an overview of the current state-of-the-art in the formation of shallow junctions in germanium by ion implantation, covering the issues of…”
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On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates by Martens, K., Chi On Chui, Brammertz, G., De Jaeger, B., Kuzum, D., Meuris, M., Heyns, M., Krishnamohan, T., Saraswat, K., Maes, H.E., Groeseneken, G.

“…ldquoConventionalrdquo techniques and related capacitance-voltage characteristic interpretation were established to evaluate interface trap density on Si…”
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Electrical characteristics of Ge/GeOx(N)/HfO2 gate stacks by HOUSSA, M, DE JAEGER, B, DELABIE, A, VAN ELSHOCHT, S, AFANAS'EV, V. V, AUTRAN, J. L, STESMANS, A, MEURIS, M, HEYNS, M. M

“…The electrical properties of Ge--based metal--oxide--semiconductor devices with GeOx(N)/HfO2 gate stacks are investigated. The current--voltage characteristics…”
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Electrical TCAD Simulations of a Germanium pMOSFET Technology by Hellings, Geert, Eneman, Geert, Krom, Raymond, De Jaeger, B, Mitard, Jérôme, De Keersgieter, An, Hoffmann, Thomas, Meuris, Marc, De Meyer, Kristin

“…A commercial technology computer-aided design device simulator was extended to allow electrical simulations of sub-100-nm germanium pMOSFETs. Parameters for…”
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High-Performance Deep Submicron Ge pMOSFETs With Halo Implants by Nicholas, G., De Jaeger, B., Brunco, D.P., Zimmerman, P., Eneman, G., Martens, K., Meuris, M., Heyns, M.M.

“…Ge pMOSFETs with HfO 2 gate dielectric and gate lengths down to 125 nm are fabricated in a Si-like process. Long-channel hole mobilities exceed the universal…”
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Short-channel epitaxial germanium pMOS transistors by Eneman, G., De Jaeger, B., Wang, G., Mitard, J., Hellings, G., Brunco, D.P., Simoen, E., Loo, R., Caymax, M., Claeys, C., De Meyer, K., Meuris, M., Heyns, M.M.

“…This work gives an overview of recent advances in IMEC's Ge pFET technology. Thin (330 nm) Ge epitaxial layers, selectively grown in Shallow-Trench Isolation…”
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Optimization of the source field‐plate design for low dynamic RDS‐ON dispersion of AlGaN/GaN MIS‐HEMTs by Ronchi, N., Bakeroot, B., You, S., Hu, J., Stoffels, S., Wu, T.‐L., De Jaeger, B., Decoutere, S.

“…AlGaN/GaN MIS‐HEMTs with two levels of source field‐plates were studied by means of pulsed I–V measurements. These measurements showed that the presence of a…”
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Thin epitaxial Si films as a passivation method for Ge(1 0 0): Influence of deposition temperature on Ge surface segregation and the high-k/Ge interface quality by Leys, F.E., Bonzom, R., Kaczer, B., Janssens, T., Vandervorst, W., De Jaeger, B., Van Steenbergen, J., Martens, K., Hellin, D., Rip, J., Dilliway, G., Delabie, A., Zimmerman, P., Houssa, M., Theuwis, A., Loo, R., Meuris, M., Caymax, M., Heyns, M.M.

“…Epitaxial fully strained Si films are known to form an effective passivation of the Ge(1 0 0) surface. However, we show using low-energy secondary ion mass…”
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Vertical stack reliability of GaN-on-Si buffers for low-voltage applications by Fabris, E., Borga, M., Posthuma, N., Zhao, M., De Jaeger, B., You, S., Decoutere, S., Meneghini, M., Meneghesso, G., Zanoni, E.

“…In this paper the reliability of the vertical GaN-on-Si stack for lateral p-GaN HEMTs dedicated to low-voltage applications is discussed in detail by comparing…”
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Study of CVD high- k gate oxides on high-mobility Ge and Ge/Si substrates by Van Elshocht, S., Caymax, M., Conard, T., De Gendt, S., Hoflijk, I., Houssa, M., Leys, F., Bonzom, R., De Jaeger, B., Van Steenbergen, J., Vandervorst, W., Heyns, M., Meuris, M.

“…Germanium is studied as a replacement candidate for silicon as channel material to enhance transistor performance. Interface states that cannot be passivated…”
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High Performance 70-nm Germanium pMOSFETs With Boron LDD Implants by Hellings, G., Mitard, J., Eneman, G., De Jaeger, B., Brunco, D.P., Shamiryan, D., Vandeweyer, T., Meuris, M., Heyns, M.M., De Meyer, K.

“…Ge pMOSFETs with gate lengths down to 70 nm are fabricated in a Si-like process flow. Reducing the LDD junction depth from 24 to 21 nm effectively reduces…”
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Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n- and p-FETs on Ge-On-Insulator substrates by De Jaeger, B., Bonzom, R., Leys, F., Richard, O., Steenbergen, J. Van, Winderickx, G., Moorhem, E. Van, Raskin, G., Letertre, F., Billon, T., Meuris, M., Heyns, M.

“…A key challenge in the engineering of Ge MOSFETs is to develop a proper Ge surface passivation technique prior to high-k dielectric deposition to obtain low…”
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Quantification of Drain Extension Leakage in a Scaled Bulk Germanium PMOS Technology by Eneman, G., De Jaeger, B., Simoen, E., Brunco, D.P., Hellings, G., Mitard, J., De Meyer, K., Meuris, M., Heyns, M.M.

“…This paper is the first to quantify drain extension leakage in a sub-100-nm gate-length bulk germanium technology. Leakage through the transistor's…”
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