Search Results - "Jacobs, Kristof J. P."

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  1. 1

    Defect Localization Approach for Wafer-to-Wafer Hybrid Bonding Interconnects by Jacobs, Kristof J. P., Beyne, Eric

    “…A high-resolution frontside fault isolation methodology for the analysis of wafer-to-wafer (W2W) hybrid bonding interconnects in three-dimensional integration…”
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    Journal Article
  2. 2

    Localization of Electrical Defects in Hybrid Bonding Interconnect Structures by Scanning Photocapacitance Microscopy by Jacobs, Kristof J. P., Stucchi, Michele, Beyne, Eric

    “…We report a scanning photocapacitance microscopy technique for the localization of open electrical defects in hybrid bonding wafer-to-wafer (W2W) interconnect…”
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    Journal Article
  3. 3

    Inkjet-printed electrical interconnects for high resolution integrated circuit diagnostics by Jacobs, Kristof J. P.

    Published in Communications engineering (02-05-2023)
    “…As semiconductors continue to shrink in size and become more three-dimensional in shape, the size of defects that can induce a failure also reduces, pushing…”
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    Journal Article
  4. 4

    Reliability of p-GaN Gate HEMTs in Reverse Conduction by Cingu, Deepthi, Li, Xiangdong, Bakeroot, Benoit, Amirifar, Nooshin, Geens, Karen, Jacobs, Kristof J. P., Zhao, Ming, You, Shuzhen, Groeseneken, Guido, Decoutere, Stefaan

    Published in IEEE transactions on electron devices (01-02-2021)
    “…Synchronous buck converter comprises a low side (LS) and a high side (HS) switch, where the HS switch works in the first quadrant (forward conduction) whereas…”
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    Journal Article
  5. 5

    Enhanced Infrared Imaging for Die-Level Fault Isolation Using Lock-In Thermography by Sharma, Anjanashree M. R., Jacobs, Kristof J. P., Coenen, David, De Wolf, Ingrid

    Published in Journal of failure analysis and prevention (01-10-2024)
    “…In this paper, we demonstrate three experimental approaches to improve the performance of lock-in thermography (LIT). The infrared imaging (IR) technique is…”
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    Journal Article
  6. 6

    Characterization of through-silicon vias using laser terahertz emission microscopy by Jacobs, Kristof J. P., Murakami, Hironaru, Murakami, Fumikazu, Serita, Kazunori, Beyne, Eric, Tonouchi, Masayoshi

    Published in Nature electronics (24-03-2021)
    “…Three-dimensional (3D) complementary metal–oxide–semiconductor (CMOS) integration could enable device scaling beyond the limits of conventional 2D CMOS…”
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    Journal Article
  7. 7

    Optical Beam-Based Defect Localization Methodologies for Open and Short Failures in Micrometer-Scale 3-D TSV Interconnects by Jacobs, Kristof J. P., Li, Yunlong, Stucchi, Michele, De Wolf, Ingrid, Van Huylenbroeck, Stefaan, De Vos, Joeri, Beyne, Eric

    “…We report laser-based fault isolation methodologies for the localization of open and short failures in <inline-formula> <tex-math notation="LaTeX">1 \times…”
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    Journal Article
  8. 8

    Magnetic field imaging and light induced capacitance alteration for failure analysis of Cu-TSV interconnects by De Wolf, Ingrid, Jacobs, Kristof J.P., Orozco, Antonio

    Published in Microelectronics and reliability (01-11-2020)
    “…This paper discusses Cu-filled Through Silicon Via (TSV) failure analysis cases where known FA methods were used in an alternative way. Results are shown using…”
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    Journal Article
  9. 9

    Thermal source separation for 3D defect localization using independent component analysis (ICA) from time-resolved temperature response (TRTR) by Koegel, Michael, Brand, Sebastian, Grosse, Christian, Jacobs, Kristof J.P., De Wolf, Ingrid, Altmann, Frank

    “…Lock-In Thermography is an established nondestructively operating method for the analysis of failures in microelectronic devices. In recent years a major…”
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    Conference Proceeding
  10. 10

    Characterisation of high current density resonant tunnelling diodes for THz emission using photoluminescence spectroscopy by Jacobs, Kristof J. P., Baba, Razvan, Stevens, Benjamin J., Mukai, Toshikazu, Hogg, Richard A.

    “…We present a detailed low temperature photoluminescence spectroscopic study of ~MAcm -2 resonant tunnelling diodes (RTDs). The epitaxial structure is…”
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    Conference Proceeding