Search Results - "Jacobs, Kristof J. P."
-
1
Defect Localization Approach for Wafer-to-Wafer Hybrid Bonding Interconnects
Published in IEEE transactions on semiconductor manufacturing (01-11-2023)“…A high-resolution frontside fault isolation methodology for the analysis of wafer-to-wafer (W2W) hybrid bonding interconnects in three-dimensional integration…”
Get full text
Journal Article -
2
Localization of Electrical Defects in Hybrid Bonding Interconnect Structures by Scanning Photocapacitance Microscopy
Published in IEEE transactions on instrumentation and measurement (2021)“…We report a scanning photocapacitance microscopy technique for the localization of open electrical defects in hybrid bonding wafer-to-wafer (W2W) interconnect…”
Get full text
Journal Article -
3
Inkjet-printed electrical interconnects for high resolution integrated circuit diagnostics
Published in Communications engineering (02-05-2023)“…As semiconductors continue to shrink in size and become more three-dimensional in shape, the size of defects that can induce a failure also reduces, pushing…”
Get full text
Journal Article -
4
Reliability of p-GaN Gate HEMTs in Reverse Conduction
Published in IEEE transactions on electron devices (01-02-2021)“…Synchronous buck converter comprises a low side (LS) and a high side (HS) switch, where the HS switch works in the first quadrant (forward conduction) whereas…”
Get full text
Journal Article -
5
Enhanced Infrared Imaging for Die-Level Fault Isolation Using Lock-In Thermography
Published in Journal of failure analysis and prevention (01-10-2024)“…In this paper, we demonstrate three experimental approaches to improve the performance of lock-in thermography (LIT). The infrared imaging (IR) technique is…”
Get full text
Journal Article -
6
Characterization of through-silicon vias using laser terahertz emission microscopy
Published in Nature electronics (24-03-2021)“…Three-dimensional (3D) complementary metal–oxide–semiconductor (CMOS) integration could enable device scaling beyond the limits of conventional 2D CMOS…”
Get full text
Journal Article -
7
Optical Beam-Based Defect Localization Methodologies for Open and Short Failures in Micrometer-Scale 3-D TSV Interconnects
Published in IEEE transactions on components, packaging, and manufacturing technology (2011) (01-09-2020)“…We report laser-based fault isolation methodologies for the localization of open and short failures in <inline-formula> <tex-math notation="LaTeX">1 \times…”
Get full text
Journal Article -
8
Magnetic field imaging and light induced capacitance alteration for failure analysis of Cu-TSV interconnects
Published in Microelectronics and reliability (01-11-2020)“…This paper discusses Cu-filled Through Silicon Via (TSV) failure analysis cases where known FA methods were used in an alternative way. Results are shown using…”
Get full text
Journal Article -
9
Thermal source separation for 3D defect localization using independent component analysis (ICA) from time-resolved temperature response (TRTR)
Published in 2021 IEEE 17th International Conference on Automation Science and Engineering (CASE) (23-08-2021)“…Lock-In Thermography is an established nondestructively operating method for the analysis of failures in microelectronic devices. In recent years a major…”
Get full text
Conference Proceeding -
10
Characterisation of high current density resonant tunnelling diodes for THz emission using photoluminescence spectroscopy
Published in 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz) (01-09-2016)“…We present a detailed low temperature photoluminescence spectroscopic study of ~MAcm -2 resonant tunnelling diodes (RTDs). The epitaxial structure is…”
Get full text
Conference Proceeding