Search Results - "Jacobs, Alan G"

Detecting defects that reduce breakdown voltage using machine learning and optical profilometry by Gallagher, James C., Mastro, Michael A., Jacobs, Alan G., Kaplar, Robert. J., Hobart, Karl D., Anderson, Travis J.

“…Semiconductor wafer manufacturing relies on the precise control of various performance metrics to ensure the quality and reliability of integrated circuits. In…”
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Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques by Gallagher, James C., Ebrish, Mona A., Porter, Matthew A., Jacobs, Alan G., Gunning, Brendan P., Kaplar, Robert J., Hobart, Karl D., Anderson, Travis J.

“…To improve the manufacturing of vertical GaN devices for power electronics applications, the effects of defects in GaN substrates need to be better understood…”
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Using machine learning with optical profilometry for GaN wafer screening by Gallagher, James C., Mastro, Michael A., Ebrish, Mona A., Jacobs, Alan G., Gunning, Brendan P., Kaplar, Robert J., Hobart, Karl D., Anderson, Travis J.

“…To improve the manufacturing process of GaN wafers, inexpensive wafer screening techniques are required to both provide feedback to the manufacturing process…”
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Role of Capping Material and GaN Polarity on Mg Ion Implantation Activation by Jacobs, Alan G., Feigelson, Boris N., Hite, Jennifer K., Gorsak, Cameron A., Luna, Lunet E., Anderson, Travis J., Kub, Francis J.

“…Ion implantation of magnesium for p‐type GaN presents many opportunities; however, activation has proven difficult due to the decomposition of GaN at relevant…”
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Kinetics of Block Copolymer Phase Segregation during Sub-millisecond Transient Thermal Annealing by Jacobs, Alan G, Liedel, Clemens, Peng, Hui, Wang, Linxi, Smilgies, Detlef-M, Ober, Christopher K, Thompson, Michael O

“…Early stage phase segregation of block copolymers (BCPs) critically impacts the material’s final structural properties, and understanding the kinetics of these…”
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Efficient Activation and High Mobility of Ion-Implanted Silicon for Next-Generation GaN Devices by Jacobs, Alan G., Feigelson, Boris N., Spencer, Joseph A., Tadjer, Marko J., Hite, Jennifer K., Hobart, Karl D., Anderson, Travis J.

“…Selective area doping via ion implantation is crucial to the implementation of most modern devices and the provision of reasonable device design latitude for…”
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Lateral Temperature-Gradient Method for High-Throughput Characterization of Material Processing by Millisecond Laser Annealing by Bell, Robert T, Jacobs, Alan G, Sorg, Victoria C, Jung, Byungki, Hill, Megan O, Treml, Benjamin E, Thompson, Michael O

“…A high-throughput method for characterizing the temperature dependence of material properties following microsecond to millisecond thermal annealing,…”
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Impact of Anode Thickness on Breakdown Mechanisms in Vertical GaN PiN Diodes with Planar Edge Termination by Ebrish, Mona, Porter, Matthew, Jacobs, Alan, Gallagher, James, Kaplar, Robert, Gunning, Brendan, Hobart, Karl, Anderson, Travis

“…GaN vertical PiN diodes with different anode thicknesses were fabricated on three native GaN wafers with the same p-layer doping concentrations, and planar…”
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10 kV Ga2O3 Charge-Balance Schottky Rectifier Operational at 200 °C by Qin, Yuan, Xiao, Ming, Porter, Matthew, Ma, Yunwei, Spencer, Joseph, Du, Zhonghao, Jacobs, Alan G., Sasaki, Kohei, Wang, Han, Tadjer, Marko, Zhang, Yuhao

“…This work demonstrates a lateral Ga 2 O 3 Schottky barrier diode (SBD) with a breakdown voltage ( BV ) over 10 kV, the highest BV reported in Ga 2 O 3 devices…”
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Ultrafast Self-Assembly of Sub-10 nm Block Copolymer Nanostructures by Solvent-Free High-Temperature Laser Annealing by Jiang, Jing, Jacobs, Alan G, Wenning, Brandon, Liedel, Clemens, Thompson, Michael O, Ober, Christopher K

“…Laser spike annealing was applied to PS-b-PDMS diblock copolymers to induce short-time (millisecond time scale), high-temperature (300 to 700 °C) microphase…”
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Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3:N with high mobility by Spencer, Joseph A., Tadjer, Marko J., Jacobs, Alan G., Mastro, Michael A., Lyons, John L., Freitas, Jaime A., Gallagher, James C., Thieu, Quang T., Sasaki, Kohei, Kuramata, Akito, Zhang, Yuhao, Anderson, Travis J., Hobart, Karl D.

“…Activation of implanted donors into a highly-resistive, nitrogen-doped homoepitaxial β-Ga2O3 has been investigated. Nitrogen acceptors with the concentration…”
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PtOx Schottky Contacts on Degenerately Doped 2¯01β-Ga2O3 Substrates by Spencer, Joseph A., Jacobs, Alan G., Hobart, Karl D., Koehler, Andrew D., Anderson, Travis J., Zhang, Yuhao, Tadjer, Marko J.

“…Platinum oxide (PtO x ) Schottky contacts on degenerately doped β -Ga 2 O 3 substrates show an increased barrier height of 85% and 64% when compared to nickel…”
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Assessment of channel temperature in β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging by Lundh, James Spencer, Pavlidis, Georges, Sasaki, Kohei, Centrone, Andrea, Spencer, Joseph A., Masten, Hannah N., Currie, Marc, Jacobs, Alan G., Konishi, Keita, Kuramata, Akito, Hobart, Karl D., Anderson, Travis J., Tadjer, Marko J.

“…This work demonstrates direct, rapid 2D thermal mapping measurement capabilities of the ultrawide bandgap semiconductor channel of lateral…”
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Long-wavelength dielectric properties and infrared active optical phonon modes of molecular beam epitaxy ScxAl1−xN determined by infrared spectroscopic ellipsometry by Mock, Alyssa L., Jacobs, Alan G., Jin, Eric N., Hardy, Matthew T., Tadjer, Marko J.

“…Tuning the optical, electronic, and long-wavelength properties of group-III nitride alloys can be achieved by alloying AlN with ScN. We report here on the…”
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Hybrid Edge Termination for High-Voltage Vertical GaN Devices: Empirical Validation and Robust Processing Tolerance by Pandey, Prakash, Nelson, Tolen M., Hontz, Michael R., Georgiev, Daniel G., Khanna, Raghav, Jacobs, Alan G., Lundh, James S., Gallagher, James C., Koehler, Andrew D., Hobart, Karl D., Anderson, Travis J.

“…This study presents empirical validation of a simulated novel hybrid edge termination (HET) structure with planar ion implantation processing for vertical…”
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Novel Codoping Moiety to Achieve Enhanced P‐Type Doping in GaN by Ion Implantation by Jacobs, Alan G., Spencer, Joseph A., Hite, Jennifer K., Hobart, Karl D., Anderson, Travis J., Feigelson, Boris N.

“…Codoping of gallium nitride for improved acceptor ionization has long been theorized; however, reduction to practice proves difficult via growth. Herein,…”
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Experimental Validation of Robust Hybrid Edge Termination Structures in Vertical GaN p-i-n Diodes With Avalanche Capability by Lundh, James Spencer, Jacobs, Alan G., Pandey, Prakash, Nelson, Tolen, Georgiev, Daniel G., Koehler, Andrew D., Khanna, Raghav, Tadjer, Marko J., Hobart, Karl D., Anderson, Travis J.

“…Vertical gallium nitride (GaN) p-i-n diodes with a planar hybrid edge termination (HET) experimentally demonstrate avalanche capability. The HET consists of a…”
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Suppression of Enhanced Magnesium Diffusion During High‐Pressure Annealing of Implanted GaN by Jacobs, Alan G., Feigelson, Boris N., Lundh, James S., Spencer, Joseph A., Freitas, Jaime A., Gunning, Brendan P., Kaplar, Robert J., Zhang, Yuhao, Tadjer, Marko J., Hobart, Karl D., Anderson, Travis J.

“…Activation of ion‐implanted p‐type dopants in gallium nitride has demonstrated great progress utilizing high pressures to enable novel and traditional device…”
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Temperature Excursions Due to the Reaction Heat Produced by Atomic Layer Deposition on Nanostructured Substrates by Greenberg, Benjamin L, Anderson, Kevin P, Wolak, Mason A, Jacobs, Alan G, Wollmershauser, James A, Feigelson, Boris N

“…Many atomic layer deposition (ALD) reactions are highly exothermic, with some likely releasing hundreds of kJ/mol per cycle. In ALD on conventional substrates…”
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Reduced temperature in lateral (AlxGa1−x)2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond by Masten, Hannah N., Lundh, James Spencer, Feygelson, Tatyana I., Sasaki, Kohei, Cheng, Zhe, Spencer, Joseph A., Liao, Pai-Ying, Hite, Jennifer K., Pennachio, Daniel J., Jacobs, Alan G., Mastro, Michael A., Feigelson, Boris N., Kuramata, Akito, Ye, Peide, Graham, Samuel, Pate, Bradford B., Hobart, Karl D., Anderson, Travis J., Tadjer, Marko J.

“…The low thermal conductivity of β-Ga2O3 is a significant concern for maximizing the potential of this ultra-wide bandgap semiconductor as a power switching…”
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