Search Results - "JUNG, Seungjae"

Low temperature solution-processed graphene oxide/Pr0.7Ca0.3MnO3 based resistive-memory device by Kim, Insung, Siddik, Manzar, Shin, Jungho, Biju, Kuyyadi P, Jung, Seungjae, Hwang, Hyunsang

“…We propose a graphene oxide (GO)/Pr0.7Ca0.3MnO3 (PCMO) based resistance random access memory (RRAM) device. Both active layers were prepared by a sol-gel…”
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Improved Switching Variability and Stability by Activating a Single Conductive Filament by PARK, Jubong, JUNG, Seungjae, LEE, Wootae, KIM, Seonghyun, SHIN, Jungho, LEE, Daeseok, WOO, Jiyong, HWANG, Hyunsang

“…We successfully fabricated a single-filament-activated resistive memory having limited conductive filament (CF) source through a novel fabrication technique…”
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Improved Switching Uniformity and Speed in Filament-Type RRAM Using Lightning Rod Effect by PARK, Jubong, JO, Minseok, LEE, Joonmyoung, JUNG, Seungjae, KIM, Seonghyun, LEE, Wootae, SHIN, Jungho, HWANG, Hyunsang

“…Improved switching uniformity and speed were demonstrated using a filament-type resistive memory. By using a gradual reset operation, a leaky high resistance,…”
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Resistive switching characteristics of solution-processed TiOx for next-generation non-volatile memory application; transparency, flexibility, and nano-scale memory feasibility by JUNG, Seungjae, KONG, Jaemin, SONG, Sunghoon, LEE, Kwanghee, LEE, Takhee, HWANG, Hyunsang, JEON, Sanghun

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Excellent State Stability of Cu/SiC/Pt Programmable Metallization Cells for Nonvolatile Memory Applications by LEE, Wootae, PARK, Jubong, SON, Myungwoo, LEE, Joonmyoung, JUNG, Seungjae, KIM, Seonghyun, PARK, Sangsu, SHIN, Jungho, HWANG, Hyunsang

“…We have investigated silicon carbide (SiC) as a new programmable metallization cell material for nonvolatile memory applications. Our Cu/SiC/Pt devices showed…”
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Operation Voltage Control in Complementary Resistive Switches Using Heterodevice by Daeseok Lee, Jubong Park, Seungjae Jung, Godeuni Choi, Joonmyoung Lee, Seonghyun Kim, Jiyong Woo, Siddik, M., Eujun Cha, Hyunsang Hwang

“…For the high-density memory application of resistive random access memory (ReRAM), we study the complementary resistive switch (CRS) behavior of a HfO x -based…”
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Excellent resistive switching in nitrogen-doped Ge2Sb2Te5 devices for field-programmable gate array configurations by Kim, Seonghyun, Park, Jubong, Jung, Seungjae, Lee, Wootae, Woo, Jiyong, Cho, Chunhum, Siddik, Manzar, Shin, Jungho, Park, Sangsu, Hun Lee, Byoung, Hwang, Hyunsang

“…The nitrogen-doped Ge2Sb2Te5 (GST) programmable metallization cell is investigated to address the low switching voltage and need for a high resistance ratio,…”
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Varistor-type bidirectional switch (JMAX>107A/cm2, selectivity∼104) for 3D bipolar resistive memory arrays by Wootae Lee, Jubong Park, Jungho Shin, Jiyong Woo, Seonghyun Kim, Choi, G., Seungjae Jung, Sangsu Park, Daeseok Lee, Euijun Cha, Hyung Dong Lee, Soo Gil Kim, Chung, S., Hyunsang Hwang

“…We demonstrate a varistor-type bidirectional switch (VBS) with excellent selection property for future 3D bipolar resistive memory array. A highly non-linear…”
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Self-formed Schottky barrier induced selector-less RRAM for cross-point memory applications by Park, Sangsu, Jung, Seungjae, Siddik, Manzar, Jo, Minseok, Park, Jubong, Kim, Seonghyun, Lee, Wootae, Shin, Jungho, Lee, Daeseok, Choi, Godeuni, Woo, Jiyong, Cha, Euijun, Lee, Byoung Hun, Hwang, Hyunsang

“…We propose a selector‐less Pr0.7Ca0.3MnO3 (PCMO) based resistive‐switching RAM (RRAM) for high‐density cross‐point memory array applications. First, we…”
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Asymmetric MIMO System Design Based on OFDMA-TDD for Unmanned Ground Systems by Jisang You, Joonsung Choi, Seungjae Jung, Joonhyuk Kang

“…The unmanned ground system (UGS) demands the high data rate and link reliability in battlefield and hazardous environment. Also, more radio resources should be…”
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New Set/Reset Scheme for Excellent Uniformity in Bipolar Resistive Memory by PARK, Jubong, JO, Minseok, JUNG, Seungjae, LEE, Joonmyoung, LEE, Wootae, KIM, Seonghyun, PARK, Sangsu, SHIN, Jungho, HWANG, Hyunsang

“…We proposed a new set/reset operation scheme to improve the switching uniformity of filament-type resistive memory. By controlling the magnitude of the sweep…”
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Improved switching uniformity of a carbon-based conductive-bridge type ReRAM by controlling the size of conducting filament by Park, Jubong, Jo, Minseok, Lee, Joonmyoung, Jung, Seungjae, Lee, Wootae, Kim, Seonghyun, Park, Sangsu, Shin, Jungho, Hwang, Hyunsang

“…We investigated the resistive switching properties of a amorphous carbon-based ReRAM device. In order to minimize the fluctuations of switching parameters, we…”
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In-Depth Study on the Effect of Active-Area Scale-Down of Solution-Processed \hbox by Jung, Seungjae, Kong, Jaemin, Kim, Tae-Wook, Song, Sunghoon, Lee, Kwanghee, Lee, Takhee, Hwang, Hyunsang, Jeon, Sanghun

“…The effect of active-area scale-down and improved memory performance of solution-processed TiO_x were investigated using devices with active areas ranging from…”
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The effect of KrF laser annealing within an ultrashort time on metal-alumina-nitride-oxide-silicon-type flash memory devices by Heo, Sungho, Chang, Man, Ju, Yongkyu, Jung, Seungjae, Hwang, Hyunsang

“…The effect of laser annealing (LA) within an ultrashort time on metal-alumina-nitride-oxide-silicon-type flash memory device is investigated. Conventional…”
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Effect of \hbox\hbox\hbox Thermal Barrier on Reset Operations in Filament-Type Resistive Memory by Wootae Lee, Siddik, M., Seungjae Jung, Jubong Park, Seonghyun Kim, Jungho Shin, Joonmyoung Lee, Sangsu Park, Myungwoo Son, Hyunsang Hwang

“…We have investigated the effect of a Ge 2 Sb 2 Te 5 (GST) thermal barrier on the reset operations in TiN/Cu/SiC/Pt devices. When the GST film was introduced as…”
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Excellent Selector Characteristics of Nanoscale \hbox for High-Density Bipolar ReRAM Applications by Son, Myungwoo, Lee, Joonmyoung, Park, Jubong, Shin, Jungho, Choi, Godeuni, Jung, Seungjae, Lee, Wootae, Kim, Seonghyun, Park, Sangsu, Hwang, Hyunsang

“…We herein present a nanoscale vanadium oxide (VO 2 ) device with excellent selector characteristics such as a high on/off ratio (>; 50), fast switching speed…”
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Impact of high-pressure deuterium oxide annealing on the blocking efficiency and interface quality of metal-alumina-nitride-oxide-silicon-type flash memory devices by Chang, Man, Hasan, Musarrat, Jung, Seungjae, Park, Hokyung, Jo, Minseok, Choi, Hyejung, Hwang, Hyunsang

“…We have investigated the effect of high-pressure deuterium oxide annealing (HPDOA) on metal-alumina-nitride-oxide-silicon-type flash memory device. HPDOA was…”
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Proton Irradiation Effects on Resistive Random Access Memory With ZrO /HfO Stacks by Daeseok Lee, Joonmyoung Lee, Seungjae Jung, Seonghyun Kim, Jubong Park, Biju, K. P., Minhyeok Choe, Takhee Lee, Hyunsang Hwang

“…In this study, we investigated proton irradiation effects on resistive random access memory (ReRAM) comprising ZrO x /HfO x stacks. After irradiation, changes…”
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Self-Selective Characteristics of Nanoscale \hbox Devices for High-Density ReRAM Applications by Myungwoo Son, Xinjun Liu, Sadaf, S. M., Daeseok Lee, Sangsu Park, Wootae Lee, Seonghyun Kim, Jubong Park, Jungho Shin, Seungjae Jung, Moon-Ho Ham, Hyunsang Hwang

“…We herein present a hybrid-type memory device in which threshold switching and bipolar resistive switching are combined. The nanoscale vanadium oxide (VO x )…”
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Multibit Operation of \hbox -Based ReRAM by Schottky Barrier Height Engineering by Jubong Park, Biju, K P, Seungjae Jung, Wootae Lee, Joonmyoung Lee, Seonghyun Kim, Sangsu Park, Jungho Shin, Hyunsang Hwang

“…We demonstrated multibit operation using a 250-nm Ir/TiO x / TiN resistive random access memory by Schottky barrier height engineering. A Schottky barrier was…”
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