Search Results - "JINA JEON"
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1
Rapid relaxation of crystallographic anisotropy in SiO2-removed lateral epitaxial overgrown GaN layers
Published in Journal of crystal growth (01-03-2002)Get full text
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2
A selective growth of III-nitride by MOCVD for a buried-ridge type structure
Published in Journal of crystal growth (01-06-2001)“…We report a novel structure of a selectively grown buried-ridge (SGBR) type nitride-based laser diode structure grown on sapphire and lateral epitaxial…”
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3
Effect of oxygen incorporation in a-plane GaN on p-type ohmic contact property
Published in Japanese Journal of Applied Physics (01-09-2014)“…We report on the origin of the non-ohmic behavior of Ni/Au-based p-type contacts on a nonpolar a-plane GaN layer. The contact properties of Ga-polar c-plane…”
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4
Reduction in crystallographic tilting of lateral epitaxial overgrown GaN by removal of oxide mask
Published in Applied physics letters (10-09-2001)“…The lateral overgrowth of GaN was carried out by low-pressure metalorganic chemical vapor deposition. SiO2 mask was removed just before coalescence and a…”
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5
Rapid relaxation of crystallographic anisotropy in SiO 2-removed lateral epitaxial overgrown GaN layers
Published in Journal of crystal growth (2002)“…Conventional LEO GaN layers are generally known to exhibit strain anisotropy arising from the interaction between laterally overgrown GaN and SiO 2 masks. In…”
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6
Inversion domains triggering recovery of luminescence uniformity in epitaxially lateral overgrown thick GaN film
Published in Applied physics letters (25-12-2000)“…A 150 μm-thick GaN layer was grown by halide vapor phase epitaxy utilizing selective lateral overgrowth on a SiO2-prepatterned sapphire substrate. A series of…”
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