Search Results - "JEON, WOOJIN"

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  1. 1

    Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer by Kim, Han Joon, Park, Min Hyuk, Kim, Yu Jin, Lee, Young Hwan, Jeon, Woojin, Gwon, Taehong, Moon, Taehwan, Kim, Keum Do, Hwang, Cheol Seong

    Published in Applied physics letters (10-11-2014)
    “…The degradation of ferroelectric (FE) properties of atomic layer deposited Hf0.5Zr0.5O2 films with increasing thickness was mitigated by inserting 1 nm-thick…”
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    Journal Article
  2. 2

    Highly efficient dual photoredox/copper catalyzed atom transfer radical polymerization achieved through mechanism-driven photocatalyst design by Jeon, Woojin, Kwon, Yonghwan, Kwon, Min Sang

    Published in Nature communications (17-06-2024)
    “…Atom transfer radical polymerization (ATRP) with dual photoredox/copper catalysis combines the advantages of photo-ATRP and photoredox-mediated ATRP, utilizing…”
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    Journal Article
  3. 3

    Multimaterial and multifunctional neural interfaces: from surface-type and implantable electrodes to fiber-based devices by Sung, Changhoon, Jeon, Woojin, Nam, Kum Seok, Kim, Yeji, Butt, Haider, Park, Seongjun

    “…Neural interfaces have enabled significant advancements in neuroscience and paved the way for clinical applications in the diagnosis, treatment, and prevention…”
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    Journal Article
  4. 4

    Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process by Choi, Yoenju, Kim, Taehoon, Lee, Hangyul, Park, Jusung, Park, Juhwan, Ryu, Dongho, Jeon, Woojin

    Published in Scientific reports (21-09-2022)
    “…The design-rule shrinkage in semiconductor devices is a challenge at every step of the integration process. In the gap-fill process for isolation, the seam and…”
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    Journal Article
  5. 5

    Highly Improved Uniformity in the Resistive Switching Parameters of TiO2 Thin Films by Inserting Ru Nanodots by Yoon, Jung Ho, Han, Jeong Hwan, Jung, Ji Sim, Jeon, Woojin, Kim, Gun Hwan, Song, Seul Ji, Seok, Jun Yeong, Yoon, Kyung Jean, Lee, Min Hwan, Hwang, Cheol Seong

    Published in Advanced materials (Weinheim) (11-04-2013)
    “…Limiting the location where electron injection occurs at the cathode interface to a narrower region is the key factor for achieving a highly improved RS…”
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    Journal Article
  6. 6

    32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory by Kim, Gun Hwan, Lee, Jong Ho, Ahn, Youngbae, Jeon, Woojin, Song, Seul Ji, Seok, Jun Yeong, Yoon, Jung Ho, Yoon, Kyung Jean, Park, Tae Joo, Hwang, Cheol Seong

    Published in Advanced functional materials (20-03-2013)
    “…Various array types of 1‐diode and 1‐resistor stacked crossbar array (1D1R CA) devices composed of a Schottky diode (SD) (Pt/TiO2/Ti/Pt) and a resistive…”
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    Journal Article
  7. 7

    Conductance stable and mechanically durable bi-layer EGaIn composite-coated stretchable fiber for 1D bioelectronics by Lee, Gun-Hee, Lee, Do Hoon, Jeon, Woojin, Yoon, Jihwan, Ahn, Kwangguk, Nam, Kum Seok, Kim, Min, Kim, Jun Kyu, Koo, Yong Hoe, Joo, Jinmyoung, Jung, WooChul, Lee, Jaehong, Nam, Jaewook, Park, Seongjun, Jeong, Jae-Woong, Park, Steve

    Published in Nature communications (13-07-2023)
    “…Deformable semi-solid liquid metal particles (LMP) have emerged as a promising substitute for rigid conductive fillers due to their excellent electrical…”
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    Journal Article
  8. 8

    Ultraviolet light blocking optically clear adhesives for foldable displays via highly efficient visible-light curing by Kwon, Yonghwan, Lee, Seokju, Kim, Junkyu, Jun, Jinwon, Jeon, Woojin, Park, Youngjoo, Kim, Hyun-Joong, Gierschner, Johannes, Lee, Jaesang, Kim, Youngdo, Kwon, Min Sang

    Published in Nature communications (02-04-2024)
    “…In developing an organic light-emitting diode (OLED) panel for a foldable smartphone (specifically, a color filter on encapsulation) aimed at reducing power…”
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    Journal Article
  9. 9

    Ferroelectric properties and switching endurance of Hf0.5Zr0.5O2 films on TiN bottom and TiN or RuO2 top electrodes by Park, Min Hyuk, Kim, Han Joon, Kim, Yu Jin, Jeon, Woojin, Moon, Taehwan, Hwang, Cheol Seong

    “…The effect of the top electrode (TE) on the ferroelectric properties and switching endurance of thin Hf0.5Zr0.5O2 films was examined. The TiN/Hf0.5Zr0.5O2/TiN…”
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    Journal Article
  10. 10

    Sustainable resistance switching performance from composite-type ReRAM device based on carbon Nanotube@Titania core–shell wires by Kim, Youngjin, Kim, Minsung, Hwang, Ji Hyeon, Kim, Tae Whan, Lee, Sang-Soo, Jeon, Woojin

    Published in Scientific reports (02-11-2020)
    “…A novel nanocomposite-based non-volatile resistance switching random access memory device introducing single-walled carbon nanotube (SWCNT)@TiO 2 core–shell…”
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    Journal Article
  11. 11

    A Study on the Charge Trapping Characteristics of High-k Laminated Traps by Yoo, Jinhyuk, Kim, SoonKon, Jeon, Woojin, Park, Areum, Choi, Donghee, Choi, Byoungdeog

    Published in IEEE electron device letters (01-09-2019)
    “…The charge trapping characteristics of the high-k laminated traps with different thickness ratios were investigated in order to improve the distribution of…”
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    Journal Article
  12. 12

    Titanium dioxide thin films for next-generation memory devices by Kim, Seong Keun, Kim, Kyung Min, Jeong, Doo Seok, Jeon, Woojin, Yoon, Kyung Jean, Hwang, Cheol Seong

    Published in Journal of Materials Research (14-02-2013)
    “…The synthesis, structure, and electrical performances of titanium dioxide (TiO2 and also doped TiO2) thin films, a capacitor dielectric for dynamic random…”
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    Book Review Journal Article
  13. 13

    Improved performance and stability of In-Sn-Zn-O thin film transistor by introducing a meso-crystalline ZrO2 high-k gate insulator by Choi, Wan-Ho, Sheng, Jiazhen, Jeong, Hyun-Jun, Park, Jin-Seong, Kim, MinJung, Jeon, Woojin

    “…Electrical characteristics and reliability of an In-Sn-Zn-O (ITZO) thin film transistor (TFT) using ZrO2 as a high-k gate insulator were investigated. Varying…”
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    Journal Article
  14. 14

    Mechanisms driving ESM-based marine ecosystem predictive skill on the east African coast by Jeon, Woojin, Park, Jong-Yeon, Stock, Charles A, Dunne, John P, Yang, Xiaosong, Rosati, Anthony

    Published in Environmental research letters (01-08-2022)
    “…Abstract The extension of seasonal to interannual prediction of the physical climate system to include the marine ecosystem has a great potential to inform…”
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    Journal Article
  15. 15

    Optimizing the Crystallinity of a ZrO2 Thin Film Insulator for InGaZnO‐Based Metal–Insulator–Semiconductor Capacitors by Nam, Minkyeong, Lee, Seungwoo, Jeong, Hanseok, Yoon, Ara, Park, Jin‐Seong, Jeon, Woojin

    Published in Advanced materials interfaces (01-04-2024)
    “…The utilization of a zirconium oxide (ZrO2) thin film as the insulator in a metal–insulator–semiconductor (MIS) capacitor to enhance the characteristics of…”
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    Journal Article
  16. 16

    Frustration of Negative Capacitance in Al2O3/BaTiO3 Bilayer Structure by Kim, Yu Jin, Park, Min Hyuk, Lee, Young Hwan, Kim, Han Joon, Jeon, Woojin, Moon, Taehwan, Do Kim, Keum, Jeong, Doo Seok, Yamada, Hiroyuki, Hwang, Cheol Seong

    Published in Scientific reports (08-01-2016)
    “…Enhancement of capacitance by negative capacitance (NC) effect in a dielectric/ferroelectric (DE/FE) stacked film is gaining a greater interest. While the…”
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    Journal Article
  17. 17

    Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors by Choi, Wan-Ho, Kim, MinJung, Jeon, Woojin, Park, Jin-Seong

    Published in AIP advances (01-01-2020)
    “…High-dielectric constant (k) materials have attracted a lot of attention for use as gate insulators (GIs) that enable low-voltage operation of thin film…”
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    Journal Article
  18. 18

    Recent advances in the understanding of high-k dielectric materials deposited by atomic layer deposition for dynamic random-access memory capacitor applications by Jeon, Woojin

    Published in Journal of materials research (14-04-2020)
    “…Capacitors represent the largest obstacle to dynamic random-access memory (DRAM) technology evolution because the capacitor properties govern the overall…”
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    Journal Article
  19. 19

    Computational and Histological Analyses for Investigating Mechanical Interaction of Thermally Drawn Fiber Implants with Brain Tissue by Kim, Kanghyeon, Sung, Changhoon, Lee, Jungjoon, Won, Joonhee, Jeon, Woojin, Seo, Seungbeom, Yoon, Kyungho, Park, Seongjun

    Published in Micromachines (Basel) (02-04-2021)
    “…The development of a compliant neural probe is necessary to achieve chronic implantation with minimal signal loss. Although fiber-based neural probes…”
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    Journal Article
  20. 20

    High-throughput fabrication of infinitely long 10 nm slit arrays for terahertz applications by Jeong, Jeeyoon, Rhie, Jiyeah, Jeon, Woojin, Hwang, Cheol Seong, Kim, Dai-Sik

    “…In pursuit of higher field enhancement and applications in terahertz frequency regime, many techniques have been developed and reported for fabrication of…”
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    Journal Article