Search Results - "JEON, Kanghoon"

Si tunnel transistors with a novel silicided source and 46mV/dec swing by Kanghoon Jeon, Wei-Yip Loh, Patel, P, Chang Yong Kang, Jungwoo Oh, Bowonder, A, Chanro Park, Park, C S, Smith, C, Majhi, P, Hsing-Huang Tseng, Jammy, R, Liu, Tsu-Jae King, Chenming Hu

“…We report a novel tunneling field effect transistor (TFET) fabricated with a high-k/metal gate stack and using nickel silicide to create a special…”
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Comprehensive Study of Quasi-Ballistic Transport in High- \kappa/Metal Gate nMOSFETs by Hyun Chul Sagong, Chang Yong Kang, Chang-Woo Sohn, Kanghoon Jeon, Eui-Young Jeong, Do-Young Choi, Chang-Ki Baek, Jeong-Soo Lee, Lee, J. C., Yoon-Ha Jeong

“…We study quasi-ballistic transport in nanoscale high-κ/metal gate nMOSFETs based on radio-frequency (RF) S -parameter analysis. An RF S -parameter-based simple…”
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on-State Performance Enhancement and Channel-Direction-Dependent Performance of a Biaxial Compressive Strained \hbox\hbox Quantum-Well pMOSFET Along \langle \hbox \rangle and \langle \hbox \rangle Channel Directions by Se-Hoon Lee, Nainani, Aneesh, Jungwoo Oh, Kanghoon Jeon, Kirsch, Paul D, Majhi, Prashant, Register, Leonard Franklin, Banerjee, Sanjay K, Jammy, Raj

“…pMOSFET performance of high Ge content (~50%) biaxial compressive strained SiGe heterostructure channel pMOSFETs is characterized, and performance between 〈110…”
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Synthesis of Superhydrophobic Fluorescent Dyes Based on Coumarin-benzoxazole Derivatives and Their Dyeability Toward Unmodified Polypropylene Fibers by Lee, Junheon, Jeon, Kanghoon, Kim, Taekyeong

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Palladium/silicon nanowire Schottky barrier-based hydrogen sensors by Skucha, Karl, Fan, Zhiyong, Jeon, Kanghoon, Javey, Ali, Boser, Bernhard

“…This work presents the design, fabrication, and characterization of a hydrogen sensor based on a palladium/nanowire Schottky barrier field-effect transistor…”
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A Low Voltage Steep Turn-Off Tunnel Transistor Design by Patel, P., Kanghoon Jeon, Bowonder, A., Chenming Hu

“…A new tunneling transistor structure is introduced that offers several advantages over prior designs. Notably, tunneling area is substantially increased. Turn…”
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Prospect of tunneling green transistor for 0.1V CMOS by Chenming Hu, Patel, P, Bowonder, A, Kanghoon Jeon, Sung Hwan Kim, Wei Yip Loh, Chang Yong Kang, Jungwoo Oh, Majhi, P, Javey, A, Tsu-Jae King Liu, Jammy, R

“…Well designed tunneling green transistor may enable future VLSIs operating at 0.1V. Sub-60mV/decade characteristics have been convincingly demonstrated on 8"…”
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Low-voltage green transistor using ultra shallow junction and hetero-tunneling by Bowonder, A., Patel, P., Kanghoon Jeon, Jungwoo Oh, Majhi, P., Hsing-Huang Tseng, Chenming Hu

“…A novel hetero-tunnel transistor (HtFET) with a heterostructure and ultra shallow junction parallel to the dielectric interface is proposed for low-voltage…”
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High mobility CMOS transistors on Si/SiGe heterostructure channels by Oh, Jungwoo, Jeon, Kanghoon, Lee, Se-Hoon, Huang, Jeff, Hung, P.Y., Ok, Injo, Sassman, Barry, Ko, Dae-Hong, Kirsch, Paul, Jammy, Raj

“…We have demonstrated high mobility CMOS transistors on Si/SiGe heterostructure channels selectively grown on a Si (100) substrate. Electron and hole mobility…”
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Band-to-Band Tunnel Transistor Design and Modeling for Low Power Applications by Jeon, Kanghoon

“…As the physical dimensions of the MOSFET have been scaling, the supply voltage has not scaled accordingly and thus the power density has been continuously…”
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Tri-gate bulk MOSFET design for improved robustness to random dopant fluctuations by Changhwan Shin, Carlson, A., Xin Sun, Kanghoon Jeon, Tsu-Jae King Liu

“…Atomistic 3D device simulations of 20nm-gate-length planar vs. tri-gate bulk MOSFETs with identical nominal retrograde-well and source/drain doping profiles…”
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on-State Performance Enhancement and Channel-Direction-Dependent Performance of a Biaxial Compressive Strained [Formula Omitted] Quantum-Well pMOSFET Along [Formula Omitted] and [Formula Omitted] Channel Directions by Lee, Se-Hoon, Nainani, Aneesh, Oh, Jungwoo, Jeon, Kanghoon, Kirsch, Paul D, Majhi, Prashant, Register, Leonard Franklin, Banerjee, Sanjay K, Jammy, Raj

“…pMOSFET performance of high Ge content ([Formula Omitted]50%) biaxial compressive strained SiGe heterostructure channel pMOSFETs is characterized, and…”
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on-State Performance Enhancement and Channel-Direction-Dependent Performance of a Biaxial Compressive Strained hbox Si 0.5 hbox Ge 0.5 Quantum-Well pMOSFET Along < hbox 110 > and < hbox 100 > Channel Directions by Lee, Se-Hoon, Nainani, Aneesh, Oh, Jungwoo, Jeon, Kanghoon, Kirsch, Paul D, Majhi, Prashant, Register, Leonard Franklin, Banerjee, Sanjay K, Jammy, Raj

“…pMOSFET performance of high Ge content ( similar to 50%) biaxial compressive strained SiGe heterostructure channel pMOSFETs is characterized, and performance…”
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ON-State Performance Enhancement and Channel-Direction-Dependent Performance of a Biaxial Compressive Strained Si0.5Ge0.5 Quantum-Well pMOSFET Along 〈110〉 and (100) Channel Directions by LEE, Se-Hoon, NAINANI, Aneesh, OH, Jungwoo, JEON, Kanghoon, KIRSCH, Paul D, MAJHI, Prashant, FRANKLIN, Leonard, BANERJEE, Sanjay K, JAMMY, Raj

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Highly scaled (Lg∼56nm) gate-last Si tunnel field-effect transistors with ION>100μA/μm by Loh, Wei-Yip, Jeon, Kanghoon, Kang, Chang Yong, Oh, Jungwoo, King Liu, Tsu-Jae, Tseng, Hsing-Huang, Xiong, Wade, Majhi, Prashant, Jammy, Raj, Hu, Chenming

“…Planar band-to-band tunneling FETs (TFETs) have been fabricated on silicon-on-insulator (SOI) substrates using conventional CMOS technologies with a highly…”
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Comparison of Ohmic contact resistances of n- and p-type Ge source/drain and their impact on transport characteristics of Ge metal oxide semiconductor field effect transistors by Oh, Jungwoo, Huang, Jeff, Chen, Yen-Ting, Ok, Injo, Jeon, Kanghoon, Lee, Se-Hoon, Sassman, Barry, Loh, Wei-Yip, Lee, Hi-Deok, Ko, Dea-Hong, Majhi, Prashant, Kirsch, Paul, Jammy, Raj

“…We report the results of a systematic study to understand low drive current of Ge-nMOSFET (metal–oxide–semiconductor field-effect transistor). The poor…”
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Comprehensive Study of Quasi-Ballistic Transport in High-[Formula Omitted]/Metal Gate nMOSFETs by Sagong, Hyun Chul, Kang, Chang Yong, Sohn, Chang-Woo, Jeon, Kanghoon, Jeong, Eui-Young, Choi, Do-Young, Baek, Chang-Ki, Lee, Jeong-Soo, Lee, Jack C, Jeong, Yoon-Ha

“…We study quasi-ballistic transport in nanoscale high-[Formula Omitted]/metal gate nMOSFETs based on radio-frequency (RF) [Formula Omitted] -parameter analysis…”
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Highly scaled (L sub(g [approx] 56 nm) gate-last Si tunnel field-effect transistors with I) sub(O)N 100 mu A/ mu m by Loh, Wei-Yip, Jeon, Kanghoon, Kang, Chang Yong, Oh, Jungwoo, Liu, Tsu-Jae King, Tseng, Hsing-Huang, Xiong, Wade, Majhi, Prashant, Jammy, Raj, Hu, Chenming

“…Planar band-to-band tunneling FETs (TFETs) have been fabricated on silicon-on-insulator (SOI) substrates using conventional CMOS technologies with a highly…”
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Sub-5nm All-Around Gate FinFET for Ultimate Scaling by Lee, H., Yu, L.-E., Ryu, S.-W., Han, J.-W., Jeon, K., Jang, D.-Y., Kim, K.-H., Lee, J., Kim, J.-H., Jeon, S., Lee, G., Oh, J., Park, Y., Bae, W., Lee, H., Yang, J., Yoo, J., Kim, S., Choi, Y.-K.

“…Sub-5nm all-around gate FinFETs with 3nm fin width were fabricated for the first time. The n-channel FinFET of sub-5nm with 1.4nm HfO 2 shows an I Dsat of…”
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Band-to-Band Tunnel Transistor Design and Modeling for Low Power Applications by Jeon, Kanghoon

“…As the physical dimensions of the MOSFET have been scaling, the supply voltage has not scaled accordingly and thus the power density has been continuously…”
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