Search Results - "JEON, Hongsoo"
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A 21 nm High Performance 64 Gb MLC NAND Flash Memory With 400 MB/s Asynchronous Toggle DDR Interface
Published in IEEE journal of solid-state circuits (01-04-2012)“…A monolithic 64 Gb MLC NAND flash based on 21 nm process technology has been developed. The device consists of 4-plane arrays and provides page size of up to…”
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Journal Article Conference Proceeding -
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13.3 A 280-Layer 1Tb 4b/cell 3D-NAND Flash Memory with a 28.5Gb/mm2 Areal Density and a 3.2GB/s High-Speed IO Rate
Published in 2024 IEEE International Solid-State Circuits Conference (ISSCC) (18-02-2024)“…3D-NAND Flash memory is evaluated as a key device that is handling the explosive data growth, showing steady bit growth and areal density increases >30% every…”
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Conference Proceeding -
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30.3 A 512Gb 3b/Cell 7th -Generation 3D-NAND Flash Memory with 184MB/s Write Throughput and 2.0Gb/s Interface
Published in 2021 IEEE International Solid- State Circuits Conference (ISSCC) (13-02-2021)“…The exponential data size growth in high-speed networks is a key motivator for nonvolatile memory development. To support this demand, higher density NAND is…”
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Conference Proceeding -
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7.5 A 128Gb 2b/cell NAND flash memory in 14nm technology with tPROG=640µs and 800MB/s I/O rate
Published in 2016 IEEE International Solid-State Circuits Conference (ISSCC) (01-01-2016)“…NAND flash memory is widely used as a cost-effective storage with high performance [1-2]. This paper presents a 128Gb multi-level cell (MLC) NAND flash memory…”
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Conference Proceeding -
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A 21nm high performance 64Gb MLC NAND flash memory with 400MB/s asynchronous toggle DDR interface
Published in 2011 Symposium on VLSI Circuits - Digest of Technical Papers (01-06-2011)“…A monolithic 64Gb MLC NAND flash based on 21nm process technology has been developed for the first time. The device consists of 4-plane arrays and provides…”
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Conference Proceeding