Search Results - "JENKON CHEN"
-
1
Mechanism of Threshold Voltage Shift (Δ V th ) Caused by Negative Bias Temperature Instability (NBTI) in Deep Submicron pMOSFETs
Published in Japanese Journal of Applied Physics (2002)“…The physical mechanism responsible for negative bias temperature instability, which is basic to the minimization of this degradation mode, is investigated, and…”
Get full text
Journal Article -
2
Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N2O-Grown oxides and NO RTA treatment
Published 2002Get full text
Conference Proceeding -
3
High performance 50 nm CMOS devices for microprocessor and embedded processor core applications
Published in International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) (2001)“…50 nm CMOS transistors for high performance and low active power applications are presented. Good short-channel effect control is achieved down to 35 nm gate…”
Get full text
Conference Proceeding -
4
LWIR 128×128 GaAs/AlGaAs multiple quantum well hybrid focal plane array
Published in IEEE transactions on electron devices (1991)Get full text
Journal Article -
5
256×256 hybrid HgCdTe infrared focal plane arrays
Published in IEEE transactions on electron devices (1991)Get full text
Journal Article -
6
Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics
Published in International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) (2001)“…This work mainly focuses on the NBTI (Negative Bias Temperature Instability) mechanism and investigates the degree of degradation caused by NBTI stress for…”
Get full text
Conference Proceeding -
7
256 x 256 hybrid HgCdTe infrared focal plane arrays
Published in IEEE transactions on electron devices (01-05-1991)“…Hybrid HgCdTe 256 x 256 focal plane arrays have been developed to meet the sensitivity, resolution, and field-of-view requirements of high-performance…”
Get full text
Journal Article -
8
Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N/sub 2/O-grown oxides and NO RTA treatment
Published in 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320) (2002)“…Ultra-thin gate dielectrics processed by remote plasma nitridation (RPN) of N/sub 2/O-grown oxides subsequently followed by NO RTA treatment (N/sub 2/O+RPN+NO…”
Get full text
Conference Proceeding