Search Results - "JASO, M. A"

Sub-μm linewidth input coils for low Tc integrated thin-film dc superconducting quantum interference devices by KETCHEN, M. B, STAWIASZ, K. G, PEARSON, D. J, BRUNNER, T. A, HU, C.-K, JASO, M. A, MANNY, M. P, PARSONS, A. A, STEIN, K. J

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Sub-micron linewidth input coils for low Tc integrated thin-film dc superconducting quantum interference devices by Ketchen, M B, STAWIASZ, K G, Pearson, D J, Brunner, T A, Hu, C-k, Jaso, M A, Manny, M P, Parsons, A A, Stein, K J

“…For the first time, demonstrated integrated dc superconducting quantum interference devices (SQUIDs) with input coils of linewidth down to 0.5 micron were…”
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Sub-μm linewidth input coils for low T c integrated thin-film dc superconducting quantum interference devices by Ketchen, M. B., Stawiasz, K. G., Pearson, D. J., Brunner, T. A., Hu, C.-K., Jaso, M. A., Manny, M. P., Parsons, A. A., Stein, K. J.

“…We have, for the first time, demonstrated integrated dc superconducting quantum interference devices (SQUIDs) with input coils of linewidth down to 0.5 μm. The…”
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Surface analysis of realistic semiconductor microstructures by Oehrlein, Gottlieb S., Chan, Kevin K., Jaso, Mark A., Rubloff, Gary W.

“…The geometrical and insulating properties of regular arrays of oxide masked silicon trenches formed by reactive ion etching have been utilized to enable i n s…”
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Transient fluorocarbon film thickness effects near the silicon dioxide/silicon interface in selective silicon dioxide reactive ion etching by Jaso, Mark A., Oehrlein, Gottlieb S.

“…We have utilized an on‐line ellipsometer to perform real time measurement of the thickness of fluorocarbon films formed on Si during overetching in selective…”
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A 0.5 μm fully scaled two-level metal fully planarized interconnect structure fabricated with X-ray lithography by Moy, D., Wang, L.K., Seeger, D.E., Silverman, J.P., Hu, C.K., Kaufman, F.B., Ray, A.K., Jaso, M.A., Mazzeo, N.J.

“…A fully planarized two-level-metal structure has been successfully fabricated at 0.5 μm groundrules with the use of X-ray lithography at all processing levels…”
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