Search Results - "Jérisian, Robert"

MgO insulating films prepared by sol–gel route for SiC substrate by Bondoux, Céline, Prené, Philippe, Belleville, Philippe, Guillet, François, Lambert, Sébastien, Minot, Benoît, Jérisian, Robert

“…Silicon carbide (SiC) is a wide bandgap semiconductor suitable for high-voltage, high-power, and high-temperature devices from dc to microwave frequencies…”
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On the optimum thickness to test dielectric reliability, in an integrated technology of power devices by Oussalah, Slimane, Nebel, Fabien, Jérisian, Robert

“…This paper deals with the extensive characterization of dielectric films with thicknesses from 20 to 65 nm. Thick dielectric reliability has been investigated…”
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Gettering on Cavities Induced by Helium Implantation in Si: The Case of Boron by Alquier, Daniel, Roqueta, Fabrice, Ventura, Laurent, Cayrel, Frederic, Dubois, Christiane, Jérisian, Robert

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Sol–gel MgO thin films for insulation on SiC by Bondoux, Céline, Prené, Philippe, Belleville, Philippe, Guillet, François, Lambert, Sébastien, Minot, Benoît, Jérisian, Robert

“…Silicon carbide (SiC) is a wide bandgap semiconductor suitable for high-voltage, high-power, and high-temperature devices from DC to microwave frequencies…”
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A comparative study of different contact resistance test structures dedicated to the power process technology by Oussalah, Slimane, Djezzar, Boualem, Jerisian, Robert

“…This paper presents different contact test structures intended to characterize the metal–semiconductor interface (aluminum–silicon) for power integrated…”
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Deep trench etching combining aluminum thermomigration and electrochemical silicon dissolution by Gautier, G., Ventura, L., Jérisian, R., Kouassi, S., Leborgne, C., Morillon, B., Roy, M.

“…A micromachining technique for silicon deep anisotropic etching and isolating porous silicon structures is developed. This original method combines aluminum…”
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Correlation of the leakage current and charge pumping in silicon on insulator gate-controlled diodes by Seghir, K., Cristoloveanu, S., Jerisian, R., Oualid, J., Auberton-Herve, A.-J.

“…The leakage and charge pumping currents were measured in gate-controlled MOS p-i-n diodes fabricated on thin SIMOX substrates. The efficiencies of the…”
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LIFETIME EXTRAPOLATION OF PZT CAPACITORS by BOUYSSOU, EMILIEN, GUEGAN, GUILLAUME, JERISIAN, ROBERT

“…We propose a new methodology for lifetime determination of PZT capacitors, based on accelerated tests performed at low voltages and high temperatures. We…”
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Influence of FN electron injections in dry and dry/wet/dry gate oxides: Relation with failure by Ciantar, Eric, Boivin, Philippe, Burle, Michel, Niel, Christophe, Michel Moragues, J., Sagnes, Bruno, Jerisian, Robert, Oualid, Jean

“…The resistances of dry and dry/wet/dry gate oxides to Fowler-Nordheim injections are compared. Two types of test MOS capacitors were used in order to verify…”
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