Search Results - "Jäschke, G"

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    Low threshold InGaAsN/GaAs lasers beyond 1500 nm by Jaschke, G., Averbeck, R., Geelhaar, L., Riechert, H.

    Published in Journal of crystal growth (01-05-2005)
    “…GaAs-based InGaAsN quantum well films grown by molecular beam epitaxy are characterized by photoluminescence spectroscopy. InGaAsN with high N concentrations…”
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    Journal Article Conference Proceeding
  2. 2

    Endotension as a Result of Pressure Transmission through the Graft following Endovascular Aneurysm Repair—An In vitro Study by Gawenda, M, Jaschke, G, Winter, St, Wassmer, G, Brunkwall, J

    “…Background: endovascular aneurysm repair (EVAR) significantly reduces, but does not abolish aneurysm sac pressure, possibly because of trans-fabric…”
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    Journal Article
  3. 3

    Influence of structural nonuniformity and nonradiative processes on the luminescence efficiency of InGaAsN quantum wells by Geelhaar, L., Galluppi, M., Jaschke, G., Averbeck, R., Riechert, H., Remmele, T., Albrecht, M., Dworzak, M., Hildebrant, R., Hoffmann, A.

    Published in Applied physics letters (02-01-2006)
    “…We compare the luminescence efficiency (i.e., room-temperature photoluminescence intensity), fluctuations in composition and thickness, degree of localization,…”
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    Journal Article
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    Influence of the manufacturing process on the electrical properties of thin (<4 nm) Hafnium based high- k stacks observed with CAFM by Lanza, M., Porti, M., Nafria, M., Benstetter, G., Frammelsberger, W., Ranzinger, H., Lodermeier, E., Jaschke, G.

    Published in Microelectronics and reliability (01-09-2007)
    “…In this work, the dependence of the electrical characteristics of some thin (<4 nm) HfO 2, HfSiO and HfO 2/SiO 2 stacks on their manufacturing process is…”
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    Journal Article Conference Proceeding
  6. 6

    Endotension is Influenced by Wall Compliance in a Latex Aneurysm Model by Gawenda, M., Knez, P., Winter, St, Jaschke, G., Wassmer, G., Schmitz-Rixen, Th, Brunkwall, J.

    “…Objectives. Even though endovascular aneurysm repair (EVAR) creates a closed chamber except for patent branches, the intra-sac pressure is never zero. This…”
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    Journal Article
  7. 7

    Low threshold InGaAsN/GaAs lasers beyond 1500nm by Jaschke, G., Averbeck, R., Geelhaar, L., Riechert, H.

    Published in Journal of crystal growth (01-05-2005)
    “…GaAs-based InGaAsN quantum well films grown by molecular beam epitaxy are characterized by photoluminescence spectroscopy. InGaAsN with high N concentrations…”
    Get full text
    Journal Article
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