Search Results - "Izpura, J.I."

On the Electrical Origin of Flicker Noise in Vacuum Devices by Izpura, J.I.

“…We have recently shown that thermal noise in the space-charge regions of solid-state devices can account for most of their excess noise, whose 1/ f spectrum is…”
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Trapping Effects in the Transient Response of AlGaN/GaN HEMT Devices by Tirado, J.M., Sanchez-Rojas, J.L., Izpura, J.I.

“…In this paper, the transient analysis of an AlGaN/GaN high-electron mobility transistor (HEMT) device is presented. Drain-current dispersion effects are…”
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Observation of the pyroelectric effect in strained piezoelectric InGaAs/GaAs quantum-wells grown on (111) GaAs substrates by Cho, S., Majerfeld, A., Sánchez, J.J., Muñoz, E., Tijero, J.M.G., Izpura, J.I.

“…We investigated the temperature dependence of the piezoelectric constant e14, i.e. the pyroelectric effect, of various strained InGaAs/GaAs single- and…”
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1/ f electrical noise due to space charge regions by Izpura, J.I.

“…This paper shows how a backgating noise coming from boundary space charge regions becomes a 1/ f resistance noise due to the biasing of the samples. This…”
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1/f noise in InGaAs/GaAs linear graded buffer layers by Vaitneia, J.F., Canido, J.A., Izpura, J.I.

“…Noise spectroscopy has been used as a sensitive technique to assess the quality of In/sub x/Ga/sub 1-x/As linear graded buffer layers grown onto GaAs…”
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Piezoelectric field determination in strained InGaAs quantum wells grown on [111]B GaAs substrates by differential photocurrent by Izpura, J.I, Sánchez, J.J, Sánchez-Rojas, J.L, Muñoz, E

“…The measurement of the differential photocurrent (DP) generated in PIN GaAs diodes with embedded strained InGaAs quantum wells has allowed us to determine the…”
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Epitaxial photoconductive detectors: a kind of photo-FET device by Izpura, J.I., Munoz, E.

“…In epitaxial layers with a large area to thickness ratio, surface and interface space charge regions being, modulated by the incident light, behave as…”
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Frequency Characterization of AlN Piezoelectric Resonators by Clement, M., Gonzalez-Castilla, S., Olivares, J., Malo, J., Izpura, J.I., Iborra, E., Sangrador, J.

“…In this paper, we analyze the vibrational spectra of mechanical resonators actuated piezoelectrically with aluminum nitride (AlN) films. The microresonators…”
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Numerical 2D simulation of surface states effects in AlGaN/GaN HEMT and GaN MESFET devices by Tirado, J.M., Sanchez de Rojas, J.L., Izpura, J.I.

“…The consequences of surface states in field-effect devices based on GaN are analyzed in this work. DC and transient effects on drain current response are…”
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