Search Results - "Izhnin, A. I."

Luminescence studies of HgCdTe- and InAsSb-based quantum-well structures by Izhnin, I. I., Izhnin, A. I., Fitsych, O. I., Voitsekhovskii, A. V., Gorn, D. I., Semakova, A. A., Bazhenov, N. L., Mynbaev, K. D., Zegrya, G. G.

“…Results of photoluminescence studies of single-quantum-well HgCdTe-based structures and electroluminescence studies of multiple-quantum-well InAsSb-based…”
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Acceptor states in heteroepitaxial CdHgTe films grown by molecular-beam epitaxy by Mynbaev, K. D., Shilyaev, A. V., Bazhenov, N. L., Izhnin, A. I., Izhnin, I. I., Mikhailov, N. N., Varavin, V. S., Dvoretsky, S. A.

“…The photoluminescence method is used to study acceptor states in CdHgTe heteroepitaxial films (HEFs) grown by molecular-beam epitaxy. A comparison of the…”
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Blue-shift in photoluminescence of ion-milled HgCdTe films and relaxation of defects induced by the milling by Pociask, M., Izhnin, I.I., Mynbaev, K.D., Izhnin, A.I., Dvoretsky, S.A., Mikhailov, N.N., Sidorov, Yu.G., Varavin, V.S.

“…Simultaneous measurements of electrical conductivity, the Hall coefficient, and photoluminescence (PL) spectra of ion-milled Hg 1 − x Cd x Te films ( x ∼ 0.30…”
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Defect structure of CdxHg1 − xTe films grown by liquid-phase epitaxy, studied by means of low-energy ion treatment by Izhnin, I. I., Izhnin, A. I., Fitsych, E. I., Smirnova, N. A., Denisov, I. A., Pociask, M., Mynbaev, K. D.

“…Treatment with low-energy ions and measurements of electrical parameters of samples have been used to study the defect structure of Cd x Hg 1 − x Te films…”
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Photoluminescence of CdHgTe solid solutions subjected to low-energy ion treatment by Izhnin, I. I., Izhnin, A. I., Mynbaev, K. D., Bazhenov, N. L., Fitsych, E. I., Yakushev, M. V., Mikhailov, N. N., Varavin, V. S., Dvoretsky, S. A.

“…The photoluminescence (PL) of CdHgTe solid solutions subjected to low-energy ion treatment is studied. A blue shift of the peaks in the PL spectra is observed…”
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Analysis of the photoluminescence spectra of CdxHg1–xte heteroepitaxial structures with potential and quantum wells grown by molecularbeam epitaxy by Voitsekhovskii, A. V., Gorn, D. I., Izhnin, I. I., Izhnin, A. I., Goldin, V. D., Mikhailov, N. N., Dvoretskii, S. A., Sidorov, Yu. G., Yakushev, M. V., Varavin, V. S.

“…A theoretical model for description of the band diagram and the photoluminescence spectra of heteroepitaxial structures (HES) based on Cd x Hg 1– x Te (MCT)…”
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Defect structure of Cd{sub x}Hg{sub 1-x}Te films grown by liquid-phase epitaxy, studied by means of low-energy ion treatment by Izhnin, I. I., Izhnin, A. I., Fitsych, E. I., Smirnova, N. A., Denisov, I. A., Pociask, M., Mynbaev, K. D.

“…Treatment with low-energy ions and measurements of electrical parameters of samples have been used to study the defect structure of Cd{sub x}Hg{sub 1-x}Te…”
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Defect structure of Cd x Hg1 − x Te films grown by liquid-phase epitaxy, studied by means of low-energy ion treatment by Izhnin, I. I., Izhnin, A. I., Fitsych, E. I., Smirnova, N. A., Denisov, I. A., Pociask, M., Mynbaev, K. D.

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Electrical and optical properties of CdHgTe films grown by molecular-beam epitaxy on silicon substrates by Izhnin, I. I., Mynbaev, K. D., Yakushev, M. V., Izhnin, A. I., Fitsych, E. I., Bazhenov, N. L., Shilyaev, A. V., Savitskyy, H. V., Jakiela, R., Sorochkin, A. V., Varavin, V. S., Dvoretsky, S. A.

“…The electrical and optical properties of epitaxial CdHgTe films grown on silicon substrates by molecular-beam epitaxy have been studied. The results of…”
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Analysis of the photoluminescence spectra of Cd x Hg1–x te heteroepitaxial structures with potential and quantum wells grown by molecularbeam epitaxy by Voitsekhovskii, A. V., Gorn, D. I., Izhnin, I. I., Izhnin, A. I., Goldin, V. D., Mikhailov, N. N., Dvoretskii, S. A., Sidorov, Yu. G., Yakushev, M. V., Varavin, V. S.

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Blue-shift in photoluminescence of ion-milled HgCdTe films and relaxation of defects induced by the milling by POCIASK, M, IZHNIN, I. I, MYNBAEV, K. D, IZHNIN, A. I, DVORETSKY, S. A, MIKHAILOV, N. N, SIDOROV, Yu. G, VARAVIN, V. S

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Effect of annealing on the optical and photoelectrical properties of Cd x Hg1 − x Te heteroepitaxial structures for the middle infrared range by Izhnin, A. I., Izhnin, I. I., Mynbaev, K. D., Ivanov-Omskiĭ, V. I., Bazhenov, N. L., Smirnov, V. A., Varavin, V. S., Mikhailov, N. N., Sidorov, G. Yu

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Effect of annealing on the optical and photoelectrical properties of CdxHg1 − xTe heteroepitaxial structures for the middle infrared range by Izhnin, A. I., Izhnin, I. I., Mynbaev, K. D., Ivanov-Omskiĭ, V. I., Bazhenov, N. L., Smirnov, V. A., Varavin, V. S., Mikhailov, N. N., Sidorov, G. Yu

“…We have studied the influence of various postgrowth treatments (annealing in helium atmosphere or mercury vapor, low-energy ion etching) on the optical and…”
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