Search Results - "Izawa, Masaru"

Thermal-cyclic atomic layer etching of cobalt with smooth etched surface by plasma oxidation and organometallization by Fujisaki, Sumiko, Yamaguchi, Yoshihide, Kobayashi, Hiroyuki, Shinoda, Kazunori, Yamada, Masaki, Hamamura, Hirotaka, Kawamura, Kohei, Izawa, Masaru

“…Thermal-cyclic atomic layer etching of a Co film and a fine pattern with a smooth etched surface by plasma oxidation and organometallization is demonstrated…”
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Oxidation state of cobalt oxide in thermal-cyclic atomic layer etching of cobalt by plasma oxidation and organometallization by Fujisaki, Sumiko, Yamaguchi, Yoshihide, Kobayashi, Hiroyuki, Shinoda, Kazunori, Yamada, Masaki, Kawamura, Kohei, Izawa, Masaru

“…Thermal-cyclic atomic layer etching of Co blanket film and a fine pattern by plasma oxidation and organometallization were investigated. To obtain a smoothly…”
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Self-limiting reactions of ammonium salt in CHF3/O2 downstream plasma for thermal-cyclic atomic layer etching of silicon nitride by Shinoda, Kazunori, Miyoshi, Nobuya, Kobayashi, Hiroyuki, Izawa, Masaru, Saeki, Tomonori, Ishikawa, Kenji, Hori, Masaru

“…Self-limiting reactions of ammonium salt in CHF3/O2 downstream plasma were demonstrated for thermal-cyclic atomic layer etching (ALE) of Si3N4. In situ x-ray…”
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Dry etching of ternary metal carbide TiAlC via surface modification using floating wire-assisted vapor plasma by Nguyen, Thi-Thuy-Nga, Shinoda, Kazunori, Hamamura, Hirotaka, Maeda, Kenji, Yokogawa, Kenetsu, Izawa, Masaru, Ishikawa, Kenji, Hori, Masaru

“…Dry etching of ternary metal carbides TiAlC has been first developed by transferring from wet etching to dry etching using a floating wire (FW)-assisted…”
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Atomic layer etching of silicon nitride using infrared annealing for short desorption time of ammonium fluorosilicate by Miyoshi, Nobuya, Kobayashi, Hiroyuki, Shinoda, Kazunori, Kurihara, Masaru, Watanabe, Tomoyuki, Kouzuma, Yutaka, Yokogawa, Kenetsu, Sakai, Satoshi, Izawa, Masaru

“…An atomic layer etching process for silicon nitride (Si3N4) has been developed in which ammonium fluorosilicate [(NH4)2SiF6] is formed and desorbed using…”
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Improving the etching performance of high-aspect-ratio contacts by wafer temperature control by Tandou, Takumi, Kubo, Seiji, Yokogawa, Ken’etsu, Negishi, Nobuyuki, Izawa, Masaru

“…•A novel wafer temperature control system using direct expansion cycles is developed.•A design method to achieve uniform temperature over a wafer is…”
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Effects of Mask and Necking Deformation on Bowing and Twisting in High-Aspect-Ratio Contact Hole Etching by Miyake, Masatoshi, Negishi, Nobuyuki, Izawa, Masaru, Yokogawa, Ken'etsu, Oyama, Masatoshi, Kanekiyo, Tadamitsu

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Investigation of particle reduction and its transport mechanism in UHF-ECR dielectric etching system by Kobayashi, Hiroyuki, Yokogawa, Ken'etsu, Maeda, Kenji, Izawa, Masaru

“…Control of particle transport was investigated by using a UHF-ECR etching apparatus with a laser particle monitor. The particles, which float at a…”
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Study on the Distribution Control of Etching Rate and Critical Dimensions in Microwave Electron Cyclotron Resonance Plasmas for the Next Generation 450 mm Wafer Processing by Maeda, Kenji, Obama, Shinji, Tamura, Hitoshi, Miya, Go, Izawa, Masaru

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Study on the Distribution Control of Etching Rate and Critical Dimensions in Microwave Electron Cyclotron Resonance Plasmas for the Next Generation 450 mm Wafer Processing by Maeda, Kenji, Obama, Shinji, Tamura, Hitoshi, Miya, Go, Izawa, Masaru

“…A newly designed microwave electron cyclotron resonance (ECR) plasma etching reactor has been developed for 450 mm wafer processing. The etching rates of…”
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Real Time Estimation and Control of Oxide-Etch Rate Distribution Using Plasma Emission Distribution Measurements by Yokogawa, Ken'etsu, Maeda, Kenji, Izawa, Masaru

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Effects of radical-distribution control on etching-profile uniformity in dielectric etching by Kobayashi, Hiroyuki, Yokogawa, Ken'etsu, Maeda, Kenji, Kanekiyo, Tadamitsu, Izawa, Masaru

“…Uniformity control of etching profile and etching rate across a wafer during damascene etching was investigated using a UHF-ECR etching apparatus with a…”
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Atomic layer etching of SiO2 with self-limiting behavior on the surface modification step using sequential exposure of HF and NH3 by Miyoshi, Nobuya, Kobayashi, Hiroyuki, Shinoda, Kazunori, Kurihara, Masaru, Kawamura, Kohei, Kouzuma, Yutaka, Izawa, Masaru

“…Thermal atomic layer etching (ALE) for SiO2 films with self-limiting behavior on the surface modification step was developed using sequential exposure to HF…”
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Atomic layer etching of Si3N4 with high selectivity to SiO2 and poly-Si by Miyoshi, Nobuya, Shinoda, Kazunori, Kobayashi, Hiroyuki, Kurihara, Masaru, Kouzuma, Yutaka, Izawa, Masaru

“…Atomic layer etching (ALE) is usually classified into ion-driven anisotropic etching or thermally driven isotropic etching. In this work, we present a thermal…”
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Gate CD Control Considering Variation of Gate and STI Structure by Kurihara, M.., Izawa, M.., Tanaka, J., Kawai, K.., Fujiwara, N..

“…We developed a fab-wide advanced process control system to control the critical dimension (CD) of gate electrode length in semiconductors. We also developed a…”
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Nonhalogen Dry Etching of Metal Carbide TiAlC by Low-Pressure N 2 /H 2 Plasma at Room Temperature by Nguyen, Thi-Thuy-Nga, Shinoda, Kazunori, Hsiao, Shih-Nan, Maeda, Kenji, Yokogawa, Kenetsu, Izawa, Masaru, Ishikawa, Kenji, Hori, Masaru

“…Ternary metal carbide TiAlC has been proposed as a metal gate material in logic semiconductor devices. It is a hard-to-etch material due to the low volatility…”
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Nonhalogen Dry Etching of Metal Carbide TiAlC by Low-Pressure N2/H2 Plasma at Room Temperature by Nguyen, Thi-Thuy-Nga, Shinoda, Kazunori, Hsiao, Shih-Nan, Maeda, Kenji, Yokogawa, Kenetsu, Izawa, Masaru, Ishikawa, Kenji, Hori, Masaru

“…Ternary metal carbide TiAlC has been proposed as a metal gate material in logic semiconductor devices. It is a hard-to-etch material due to the low volatility…”
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Improving the etching performance of high-aspect-ratio contacts by wafer temperature control: Uniform temperature design and etching rate enhancement by Tandoua, Takumi, Kubob, Seiji, Yokogawaa, Ken'etsu, Negishia, Nobuyuki, Izawaa, Masaru

“…A novel wafer temperature control system using direct expansion cycles is developed to improve etching performance. This system enables rapid temperature…”
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Investigation of reduction in etch rate of isolated holes in SiOCH by Momonoi, Yoshinori, Yonekura, Kazumasa, Izawa, Masaru

“…The reduction in the etch rate of isolated holes in SiOCH was investigated as functions of deposition condition of SiOCH, cap-layer presence, air-exposure time…”
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Tribological Properties of Water Glass Lubricant for Hot Metalworking by Matsumoto, Keishi, Izawa, Masaru, Nakanishi, Tetsuya, Tsubouchi, Kenji

“…Tribological properties of water glass (sodium silicate aqueous solution) with graphite powders, a lubricant for hot metalworking, were studied by means of…”
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