Search Results - "Iwami, Motohiro"

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  1. 1

    Preparation of manganese silicide thin films by solid phase reaction by Wang, Jinliang, Hirai, Masaaki, Kusaka, Masahiko, Iwami, Motohiro

    Published in Applied surface science (01-04-1997)
    “…A thin film formation of MnSi and MnSi 1.7 on a silicon substrate through solid phase reaction has been studied, where MnSi 1.7 is one of the few…”
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    Journal Article
  2. 2

    Valence band density of states of Cu3Si studied by soft X-ray emission spectroscopy and a first-principle molecular orbital calculation by AN, Zhenlian, KAMEZAWA, Chihiro, HIRAI, Masaaki, KUSAKA, Masahiko, IWAMI, Motohiro

    Published in Journal of the Physical Society of Japan (01-12-2002)
    “…A systematic study of the valence band structure of Cu3Si has been performed by soft X-ray emission spectroscopy and a first-principle molecular orbital…”
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    Journal Article
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    Analysis of heat-treated 6H-SiC(0001) surface using scanning tunneling microscopy by MARUMOTO, Y, TSUKAMOTO, T, HIRAI, M, KUSAKA, M, IWAMI, M, OZAWA, T, NAGAMURA, T, NAKATA, T

    Published in Japanese Journal of Applied Physics (01-06-1995)
    “…A scanning tunneling microscopy in ultrahigh vacuum (UHV) has been used to study hexagonal (6H) silicon carbide (0001)Si face prepared by heat treatment. √3…”
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    Conference Proceeding Journal Article
  6. 6

    Analysis of Nanostructure Formation Using Photon/Electron Spectroscopies: Cu on SiC Substrates by An, Z, Hirai, M, Kusaka, M, Saitoh, T, Iwami, M

    “…Auger electron spectroscopy (AES) and low-energy electron diffraction (LEED) studies of Cu deposition on a 6H-SiC(0001) surface have shown fine-particle…”
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    Journal Article
  7. 7

    Application of Monte Carlo Simulation to Structural Analysis by Soft X-Ray Emission Spectroscopy for a Silicide/Si-Bulk System by Kinoshita, Akimasa, Hirai, Masaaki, Kusaka, Masahiko, Iwami, Motohiro

    Published in Japanese Journal of Applied Physics (01-11-1999)
    “…A Monte-Carlo (MC) simulation is applied to the quantitative microanalysis of a film/substrate system. The characteristic X-ray intensity is used in this…”
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    Journal Article
  8. 8

    Influence of interface barrier on lateral transport properties for metal/semiconductor systems by YAMAMOTO, S, OHYAMA, T, OTSUKA, E, YAMAUCHI, S, IWAMI, M

    Published in Japanese Journal of Applied Physics (01-07-1994)
    “…This work reports on an investigation of the transport properties of metal semiconductor systems in the direction parallel to the interface. Anomalies caused…”
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    Journal Article
  9. 9

    Silicon carbide: fundamentals by Iwami, Motohiro

    “…Fundamental issues of silicon carbide, i.e., characteristics, crystal growth, doping of impurity atoms, metal-SiC contacts, electronic devices, etc., are…”
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    Journal Article
  10. 10

    Valence band density of states of the manganese silicides studied by soft X-ray emission spectroscopy by WANG, J, HIRAI, M, KUSAKA, M, IWAMI, M

    Published in Journal of the Physical Society of Japan (01-01-1998)
    “…Electronic states of manganese silicides with the composition of MnSi or MnSi1.7 were investigated by soft X-ray emission spectroscopy. The formation of MnSi…”
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    Journal Article
  11. 11

    Electronic and Structural Analysis of 6H-SiC(0001̄)3×3 Reconstructed Surface by Sasaki, Hiroshi, Jikimoto, Tamotsu, Kinoshita, Akimasa, Hirai, Masaaki, Kusaka, Masahiko, Iwami, Motohiro, Nakata, Toshitake

    Published in Japanese Journal of Applied Physics (01-01-1999)
    “…The 6H-SiC(0001̄) C 3×3 reconstructed surface was studied by PES using synchrotron radiation, LEED and AES. This surface with contamination free was obtained…”
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    Journal Article
  12. 12

    Application of Monte Carlo Simulation to a Structural Analysis for Two-Layered/Substrate System by Kinoshita, Akimasa, Hirai, Masaaki, Kusaka, Masahiko, Iwami, Motohiro, Yokota, Yasuhiro

    Published in Japanese Journal of Applied Physics (01-02-2000)
    “…Monte-Carlo simulation (MCS) using X-ray emission due to electron beam excitation is applied to determine the film thickness of a one-layer/substrate system…”
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    Journal Article
  13. 13

    Observation of iron pileup and reduction of SiO2 at the Si-SiO2 interface by KAMIURA, Y, HASHIMOTO, F, IWAMI, M

    Published in Applied physics letters (31-10-1988)
    “…It was found by secondary-ion mass spectrometry in-depth profiling technique that approximately 1×1020 iron atoms/cm3 accumulated at the Si-SiO2 interface of…”
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    Journal Article
  14. 14

    Construction of a soft X-ray emission spectroscopy (SXES) apparatus and its application for study of electronic and atomic structures of a multilayer system by IWAMI, M, HIRAI, M, KUSAKA, M, KUBOTA, M, YAMAMOTO, S, NAKAMURA, H, WATABE, H, KAWAI, M, SOEZIMA, H

    Published in Japanese Journal of Applied Physics (01-07-1990)
    “…A soft X-ray emission spectroscopy (SXES) apparatus was constructed using a grating monochromator. The resolution was sufficient to show differences in valence…”
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    Journal Article
  15. 15

    Valence band density of states of palladium silicides studied by X-ray emission spectroscopy (XES) by KAWAMOTO, S, HIRAI, M, KUSAKA, M, NAKAMURA, H, IWAMI, M, WATABE, H

    “…The valence band (VB) electronic state of the transition metal silicides, Pd 2 Si and PdSi, is studied by X-ray emission spectroscopy (XES), and it is proposed…”
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    Journal Article
  16. 16

    Mn(Thin-Film)/Si(Substrate) Contacts: Analysis of the Buried Interface by Soft X-Ray Emission Spectroscopy by Wang, Jinliang, Hirai, Masaaki, Iwami, MasahikoKusaka, Morii, Takashi, Watabe, Hirokuni

    Published in Japanese Journal of Applied Physics (01-01-1999)
    “…Electron-probe soft X-ray emission spectroscopy (SXES) has been applied to the nondestructive analysis of the buried interface of a Mn(thin-film)/Si(substrate)…”
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    Journal Article
  17. 17

    Ni-silicide formation : dependence on crystallographic orientation of Si substrates by YAMAUCHI, S, HIRAI, M, KUSAKA, M, IWAMI, M, NAKAMURA, H, YOKOTA, Y, AKIYAMA, A, WATABE, H

    Published in Japanese Journal of Applied Physics (01-07-1993)
    “…We have analyzed the influence of the crystalline orientation of Si substrates on Ni-silicide formation. Ni-silicide/Si(111) and (100) samples formed through…”
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    Journal Article
  18. 18

    Structual Studies of Poly(Fluoroalkyl Methacrylate)s and Poly(Fluoroalkyl α-Fluoroacrylate)s by Koizumi, Shun, Ohmori, Akira, Shimizu, Tetuo, Iwami, Motohiro

    “…Poly(fluoroalkyl methacrylate)s and poly(fluoroalkyl α-fluoroacrylate)s with various fluoroalkyl groups were prepared. These polymers were characterized for…”
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    Journal Article
  19. 19

    Valence band density of states of the iron silicides studied by soft X-ray emission spectroscopy by KASAYA, M, YAMAUCHI, S, HIRAI, M, KUSAKA, M, IWAMI, M, NAKAMURA, H, WATABE, H

    “…Electron excited Si-L2, 3 valence band soft X-ray emission spectra for α -FeSi2 and β -FeSi2 have different spectral shapes each other, and showed…”
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    Journal Article
  20. 20

    Soft X-ray spectroscopic analysis of Ni-silicides by NAKAMURA, H, HIRAI, M, KUSAKA, M, IWAMI, M, WATABE, H

    “…The valence-band electronic structure of Ni-silicide system, NiSi2, NiSi and Ni2Si, has been studied by measuring soft X-ray Si L2,3 emission spectra. It is…”
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    Journal Article