Search Results - "Iwami, Motohiro"
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Preparation of manganese silicide thin films by solid phase reaction
Published in Applied surface science (01-04-1997)“…A thin film formation of MnSi and MnSi 1.7 on a silicon substrate through solid phase reaction has been studied, where MnSi 1.7 is one of the few…”
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Valence band density of states of Cu3Si studied by soft X-ray emission spectroscopy and a first-principle molecular orbital calculation
Published in Journal of the Physical Society of Japan (01-12-2002)“…A systematic study of the valence band structure of Cu3Si has been performed by soft X-ray emission spectroscopy and a first-principle molecular orbital…”
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Non-destructive Analysis of Buried Interfaces and Surface Layers: X-Ray Emission Spectroscopic Study
Published in Japanese Journal of Applied Physics (2003)Get full text
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Analysis of heat-treated 6H-SiC(0001) surface using scanning tunneling microscopy
Published in Japanese Journal of Applied Physics (01-06-1995)“…A scanning tunneling microscopy in ultrahigh vacuum (UHV) has been used to study hexagonal (6H) silicon carbide (0001)Si face prepared by heat treatment. √3…”
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Analysis of Nanostructure Formation Using Photon/Electron Spectroscopies: Cu on SiC Substrates
Published in JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE REV PAP (2001)“…Auger electron spectroscopy (AES) and low-energy electron diffraction (LEED) studies of Cu deposition on a 6H-SiC(0001) surface have shown fine-particle…”
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Application of Monte Carlo Simulation to Structural Analysis by Soft X-Ray Emission Spectroscopy for a Silicide/Si-Bulk System
Published in Japanese Journal of Applied Physics (01-11-1999)“…A Monte-Carlo (MC) simulation is applied to the quantitative microanalysis of a film/substrate system. The characteristic X-ray intensity is used in this…”
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Influence of interface barrier on lateral transport properties for metal/semiconductor systems
Published in Japanese Journal of Applied Physics (01-07-1994)“…This work reports on an investigation of the transport properties of metal semiconductor systems in the direction parallel to the interface. Anomalies caused…”
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Silicon carbide: fundamentals
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (01-07-2001)“…Fundamental issues of silicon carbide, i.e., characteristics, crystal growth, doping of impurity atoms, metal-SiC contacts, electronic devices, etc., are…”
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Valence band density of states of the manganese silicides studied by soft X-ray emission spectroscopy
Published in Journal of the Physical Society of Japan (01-01-1998)“…Electronic states of manganese silicides with the composition of MnSi or MnSi1.7 were investigated by soft X-ray emission spectroscopy. The formation of MnSi…”
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Electronic and Structural Analysis of 6H-SiC(0001̄)3×3 Reconstructed Surface
Published in Japanese Journal of Applied Physics (01-01-1999)“…The 6H-SiC(0001̄) C 3×3 reconstructed surface was studied by PES using synchrotron radiation, LEED and AES. This surface with contamination free was obtained…”
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Application of Monte Carlo Simulation to a Structural Analysis for Two-Layered/Substrate System
Published in Japanese Journal of Applied Physics (01-02-2000)“…Monte-Carlo simulation (MCS) using X-ray emission due to electron beam excitation is applied to determine the film thickness of a one-layer/substrate system…”
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Observation of iron pileup and reduction of SiO2 at the Si-SiO2 interface
Published in Applied physics letters (31-10-1988)“…It was found by secondary-ion mass spectrometry in-depth profiling technique that approximately 1×1020 iron atoms/cm3 accumulated at the Si-SiO2 interface of…”
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Construction of a soft X-ray emission spectroscopy (SXES) apparatus and its application for study of electronic and atomic structures of a multilayer system
Published in Japanese Journal of Applied Physics (01-07-1990)“…A soft X-ray emission spectroscopy (SXES) apparatus was constructed using a grating monochromator. The resolution was sufficient to show differences in valence…”
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Valence band density of states of palladium silicides studied by X-ray emission spectroscopy (XES)
Published in Japanese Journal of Applied Physics (1993)“…The valence band (VB) electronic state of the transition metal silicides, Pd 2 Si and PdSi, is studied by X-ray emission spectroscopy (XES), and it is proposed…”
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Mn(Thin-Film)/Si(Substrate) Contacts: Analysis of the Buried Interface by Soft X-Ray Emission Spectroscopy
Published in Japanese Journal of Applied Physics (01-01-1999)“…Electron-probe soft X-ray emission spectroscopy (SXES) has been applied to the nondestructive analysis of the buried interface of a Mn(thin-film)/Si(substrate)…”
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Ni-silicide formation : dependence on crystallographic orientation of Si substrates
Published in Japanese Journal of Applied Physics (01-07-1993)“…We have analyzed the influence of the crystalline orientation of Si substrates on Ni-silicide formation. Ni-silicide/Si(111) and (100) samples formed through…”
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Structual Studies of Poly(Fluoroalkyl Methacrylate)s and Poly(Fluoroalkyl α-Fluoroacrylate)s
Published in Japanese Journal of Applied Physics (1992)“…Poly(fluoroalkyl methacrylate)s and poly(fluoroalkyl α-fluoroacrylate)s with various fluoroalkyl groups were prepared. These polymers were characterized for…”
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Valence band density of states of the iron silicides studied by soft X-ray emission spectroscopy
Published in Journal of the Physical Society of Japan (1994)“…Electron excited Si-L2, 3 valence band soft X-ray emission spectra for α -FeSi2 and β -FeSi2 have different spectral shapes each other, and showed…”
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Soft X-ray spectroscopic analysis of Ni-silicides
Published in Journal of the Physical Society of Japan (1992)“…The valence-band electronic structure of Ni-silicide system, NiSi2, NiSi and Ni2Si, has been studied by measuring soft X-ray Si L2,3 emission spectra. It is…”
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