Search Results - "Ivonin, I.V."

Manufacturing and Properties of Ferromagnetic Aluminum Nitride Doped with Nonmagnetic Impurities by Khludkov, S. S., Prudaev, I. A., Root, L. O., Tolbanov, O. P., Ivonin, I. V.

“…The review of literature on AlN doping with nonmagnetic impurities (elements of groups I, II, III, and IV of both subgroups and rare earth elements), providing…”
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Formation of Dislocations in the Process of Impurity Diffusion in GaAs by Khludkov, S. S., Prudaev, I. A., Tolbanov, O. P., Ivonin, I. V.

“…A study of the formation of dislocations in the process of impurity diffusion in GaAs has been carried out. The formation of dislocations in GaAs diffusion…”
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Aluminum Nitride Doped with Transition Metal Group Atoms as a Material for Spintronics by Khludkov, S. S., Prudaev, I. A., Root, L. O., Tolbanov, O. P., Ivonin, I. V.

“…The overview of scientific literature on the electric and magnetic properties of AlN doped with transition metal group atoms is presented. The review is based…”
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Influence of UV Radiation on the Processes Proceeding on the Anthracene Single Crystal Surface by Novikov, V. A., Kopylova, T. N., Ivonin, I. V., Gadirov, R. M., Tereshchenko, E. V., Solodova, T. A., Kareva, K. V.

“…In this study, the influence of the annealing conditions on the formation of macrosteps on the anthracene single crystal surface is demonstrated. Under normal…”
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Effect of the growth temperature on the statistical parameters of GaN surface morphology by Novikov, V. A., Preobrazhenskii, V. V., Ivonin, I. V.

“…It is shown that it is necessary to find the scaling function for a more comprehensive analysis of the statistical parameters of the surface morphology of…”
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Evolution of Surface Morphology of Anthracene Single Crystals Under Annealing by Novikov, V. A., Gadirov, R. M., Kopylova, T. N., Solodova, T. A., Bobrovnikova, I. A., Ivonin, I. V., Tereshchenko, E. V.

“…In this work, the effect of formation of macrosteps under dissolution of the anthracene single crystal surface is shown for the first time. Under standard…”
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Current limitation in [A.sup.3][B.sup.5] nitride light-emitting diodes under forward bias by Prudaev, I.A, Ivonin, I.V, Tolbanov, O.P

“…The results of investigation into forward-bias current-voltage characteristics of InGaN/GaN light-emitting diodes (LEDs) in the static and pulsed modes for…”
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The role of stress distribution at the film/barrier interface in formation of copper silicides by Panin, A. V., Shugurov, A. R., Ivonin, I. V., Shesterikov, Ye. V.

“…Silicide formation in thin Cu films subjected to thermal annealing has been investigated by atomic force microscopy, scanning electron microscopy, X-ray…”
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A study of the process of decomposition of supersaturated GaAs:Fe solid solution by scanning probe microscopy by Khludkov, S. S., Prudaev, I. A., Novikov, V. V., Tolbanov, O. P., Ivonin, I. V.

“…Using an atomic-force microscope, the decomposition of the supersaturated solid solution of iron-doped GaAs (GaAs:Fe) is studied. GaAs:Fe samples were obtained…”
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Fractal geometry of reliefs and surface potentials in epitaxial gallium arsenide and barrier metallization by Torkhov, N.A., Bozhkov, V.G., Novikov, V.A., Ivonin, I.V.

“…It is shown that relief forms of surface and character of distribution of potential irregularities of epitaxial gallium arsenide and barrier Au-metallization…”
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Investigation of circuit diagram in metal-semiconductor contacts with schottki barrier using the method of atomic force by Bozhkov, V.G., Torkhov, N.A., Novikov, V.A., Ivonin, I.V.

“…We have found out that current density distribution areally in a free contact (without a dielectric in circumferential direction) of semiconductor metal (SM)…”
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CR-39 nuclear track detector application for the diagnostics of low energy high power ion beams by Opecunov, M.S., Remnev, G.E., Grishin, A.N., Ivonin, I.V.

“…This report presents the investigation results of spectral composition of ion bemas generated by magneto-insulated ion diode of “MAC-M” accelerator…”
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