Search Results - "Ivo, Ponky"

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  1. 1
    OFF-State Degradation of AlGaN/GaN Power HEMTs: Experimental Demonstration of Time-Dependent Drain-Source Breakdown

    OFF-State Degradation of AlGaN/GaN Power HEMTs: Experimental Demonstration of Time-Dependent Drain-Source Breakdown by Meneghini, Matteo, Cibin, Giulia, Bertin, Marco, Hurkx, Godefridus Adrianus Maria, Ivo, Ponky, Sonsky, Jan, Croon, Jeroen A., Meneghesso, Gaudenzio, Zanoni, Enrico

    Published in IEEE transactions on electron devices (01-06-2014)
    “…This paper reports the experimental demonstration of a novel degradation mechanism of high-power AlGaN/GaN high electron mobility transistors (HEMTs), that is,…”
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  2. 2
    Influence of GaN cap on robustness of AlGaN/GaN HEMTs

    Influence of GaN cap on robustness of AlGaN/GaN HEMTs by Ivo, P., Glowacki, A., Pazirandeh, R., Bahat-Treidel, E., Lossy, R., Wurfl, J., Boit, C., Trankle, G.

    “…DC-Step-Stress-Tests of GaN HEMTs have been performed on wafers with and without GaN-cap. The tests consist of a step ramping of drain-source voltage V DS by 5…”
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  3. 3
    New degradation mechanism observed for AlGaN/GaN HEMTs with sub 100 nm scale unpassivated regions around the gate periphery

    New degradation mechanism observed for AlGaN/GaN HEMTs with sub 100 nm scale unpassivated regions around the gate periphery by IVO, Ponky, CHO, Eunjung Melanie, BOIT, Christian, KOTARA, Przemyslaw, SCHELLHASE, Lars, LOSSY, Richard, ZEIMER, Ute, MOGILATENKO, Anna, WÜRFL, Joachim, TRÄNKLE, Günther, GLOWACKI, Arkadiusz

    Published in Microelectronics and reliability (01-07-2014)
    “…AlGaN/GaN HEMTs with low gate leakage current in the mu A/mm range have been fabricated with a small-unpassivated region close to the gate foot. They showed…”
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  4. 4
    New degradation mechanism observed for AlGaN/GaN HEMTs with sub 100nm scale unpassivated regions around the gate periphery

    New degradation mechanism observed for AlGaN/GaN HEMTs with sub 100nm scale unpassivated regions around the gate periphery by Ivo, Ponky, Cho, Eunjung Melanie, Kotara, Przemyslaw, Schellhase, Lars, Lossy, Richard, Zeimer, Ute, Mogilatenko, Anna, Würfl, Joachim, Tränkle, Günther, Glowacki, Arkadiusz, Boit, Christian

    Published in Microelectronics and reliability (01-06-2014)
    “…•We study the sub 100nm scale unpassivated regions around the gate periphery.•The void influences the DC- and optical characteristics of the AlGaN/GaN…”
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  5. 5
    Types of degradation modes of AlGaN/GaN high electron mobility transistors (HEMTs) in dependenc on epitaxial design and buffer quality

    Types of degradation modes of AlGaN/GaN high electron mobility transistors (HEMTs) in dependenc on epitaxial design and buffer quality by Ivo, Ponky

    “…DC-Step-Stress tests have been applied on wafers as a fast AlGaN/GaN HEMTs robustness screening method with different epitaxial designs. The results showed…”
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  6. 6
    Characterization of stress degradation effects and thermal properties of AlGaN/GaN HEMTs with photon emission spectral signatures

    Characterization of stress degradation effects and thermal properties of AlGaN/GaN HEMTs with photon emission spectral signatures by Glowacki, A., Laskowski, P., Boit, C., Ivo, Ponky, Bahat-Treidel, Eldad, Pazirandeh, Reza, Lossy, Richard, Würfl, Joachim, Tränkle, Günther

    Published in Microelectronics and reliability (01-09-2009)
    “…The influence of stress degradation and device temperature variation on the device properties has been investigated with electrical and photon emission (PE)…”
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  7. 7
    Characterization of stress degradation effects and thermal properties of A1GaN/GaN HEMTs with photon emission spectral signatures

    Characterization of stress degradation effects and thermal properties of A1GaN/GaN HEMTs with photon emission spectral signatures by GLOWACKI, A, LASKOWSKI, P, BOIT, C, IVO, Ponky, BAHAT-TREIDEL, Eldad, PAZIRANDEH, Reza, LOSSY, Richard, WÜRFL, Joachim, TRÄNKLE, Günther

    Published in Microelectronics and reliability (2009)
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