Search Results - "Ivlev, G. D."

Crystallization of Amorphous Germanium Films and Multilayer a-Ge/a-Si Structures upon Exposure to Nanosecond Laser Radiation by Volodin, V. A., Krivyakin, G. K., Ivlev, G. D., Prokopyev, S. L., Gusakova, S. V., Popov, A. A.

“…The processes of the crystallization of amorphous germanium films and multilayer germanium/silicon structures upon exposure to nanosecond (70 ns) ruby laser…”
Get full text

Effect of Pulsed Laser Annealing on Optical Properties of Selenium-Hyperdoped Silicon by Komarov, F. F., Parkhomenko, I. N., Mil’chanin, O. V., Ivlev, G. D., Vlasukova, L. A., Żuk, Yu, Tsivako, A. A., Koval’chuk, N. S.

“…Layers of selenium-hyperdoped silicon with dopant concentration of up to (4–6) × 10 20 cm –3 that exceeds the limit of equilibrium solubility of this impurity…”
Get full text

The Nanosecond Effect of Intense Laser Radiation on Thin TiAlN Films by Ivlev, G. D., Zaikov, V. A., Klimovich, I. M., Komarov, F. F., Ludchik, O. R.

“…The spectral dependences (λ = 0.35–1.0 μm) of transmittance and reflectance R of binary TiAlN nitride thin films deposited by magnetron sputtering of the…”
Get full text

Photoelectric Properties of Composite Si Layers with Ag Nanoparticles Obtained by Ion Implantation and Laser Annealing by Batalov, R. I., Nuzhdin, V. I., Valeev, V. F., Nurgazizov, N. I., Bukharaev, A. A., Ivlev, G. D., Stepanov, A. L.

“…Structural and photoelectric properties of composite Ag:Si layers formed in the near-surface area of a single-crystal c-Si substrate by a high-dose…”
Get full text

The Effect of Pulsed Laser Radiation on a Si Layer with a High Dose of Implanted Ag+ Ions by Batalov, R. I., Vorobev, V. V., Nuzhdin, V. I., Valeev, V. F., Bizyaev, D. A., Bukharaev, A. A., Bayazitov, R. M., Osin, Yu. N., Ivlev, G. D., Stepanov, A. L.

“…With the purpose of creating a thin composite layer of Ag:Si containing Ag nanoparticles (NPs), the effect of a nanosecond pulse produced by ruby laser (λ =…”
Get full text

Nanosecond-Pulse Annealing of Heavily Doped Ge:Sb Layers on Ge Substrates by Batalov, R. I., Bayazitov, R. M., Novikov, H. A., Faizrakhmanov, I. A., Shustov, V. A., Ivlev, G. D.

“…To produce heavily doped epitaxial layers, amorphous Ge:Sb films with a thickness of 150 and 300 nm are vacuum-deposited on Ge substrates and are exposed to…”
Get full text

Solidification temperature of silicon surface layer melted by pulsed laser irradiation by Ivlev, G.D., Gatskevich, E.I.

“…Pyrometric measurements of the epitaxial crystallization temperature of Si have been carried out for the (100), (110) and (111) crystallographic orientations…”
Get full text

Laser-induced melting and recrystallization of CVD grown polycrystalline Si/SiGe/Ge layers by Gaiduk, P.I., Prakopyeu, S.L., Zajkov, V.A., Ivlev, G.D., Gatskevich, E.I.

“…SiGe/Ge layers were deposited by CVD on either Si or Si/SiO2 substrates and were subjected with pulsed laser annealing (LA). In situ measurements of…”
Get full text

Photoemission measurements of temperature in pulsed laser heating of various materials by Kasparov, K. N., Ivlev, G. D., Belozerova, L. I., Gatskevich, E. I.

“…The possibilities for the photoemission method of measuring the temperature of various materials heated by millisecond laser pulses have been investigated. The…”
Get full text

Temperature measurements in the pulsed laser heating of metals by Kasparov, K. N., Ivlev, G. D., Belozerova, L. I., Gatskevich, E. I.

“…The results of an investigation of the temperature dynamics of certain metals, measured by a photoemission method with a time resolution of 1 μsec, when they…”
Get full text

Dynamics of photo-ionization, heating and crystallization of implanted silicon during laser annealing by Ivlev, G.D., Gatzkevich, E.I., Bayazitov, R.M., Batalov, R.I., Khaibullin, I.B.

“…The dynamics of the nanosecond laser annealing of the implanted silicon by probing the implanted layer with infrared radiation (1.06μm) in the conditions of…”
Get full text

Effect of pulsed laser action on hole-energy spectrum of Ge ∕ Si self-assembled quantum dots by Yakimov, A. I., Dvurechenskii, A. V., Volodin, V. A., Efremov, M. D., Nikiforov, A. I., Mikhalyov, G. Yu, Gatskevich, E. I., Ivlev, G. D.

Get full text

Influence of the initial temperature of silicon on crystallization of a layer melted by nanosecond laser heating by ZHVAVYI, S. P, IVLEV, G. D

Get full text

Laser annealing of epitaxial CaF2 films on Si by Dvurechenskii, A.V., Smagina, Zh.V., Volodin, V.A., Kacyuba, A.V., Zinovyev, V.A., Ivlev, G.D., Prakopyeu, S.L.

“…•Pulsed laser annealing of the CaF2/Si(111) film leads to morphology changes.•Round-shaped nanohills are formed on the epitaxial film.•The nanohills contain…”
Get full text

Phase transformations initiated in thin layers of amorphous silicon by nanosecond excimer laser pulses by Ivlev, G. D., Gatskevich, E. I.

Get full text

The dynamics of annealing of ion-amorphized silicon by nanosecond pulses of excimer laser UV radiation by Ivlev, G. D., Gatskevich, E. I.

Get full text

Formation of cellular structure in SiGe layers under nanosecond laser irradiation by Gatskevich, E. I., Ivlev, G. D., Malevich, V. L.

“…Heating, melting, and crystallization processes of SiGe solid solution on a silicon substrate occurring under the influence of nanosecond laser irradiation…”
Get full text

Influence of temperature-time parameters of heat treatment on the process of planarization of the surface relief of microelectron structures by ZHVAVYI, S. P, IVLEV, G. D, PILIPENKO, V. A, PONOMAR, V. N

“…The authors consider the process of fusion of phosphorosilicate and borophosphorosilicate glasses in planarization of the surface of integrated microcircuits…”
Get full text

Pulsed-laser modification of germanium nanoclusters in silicon by Volodin, V. A., Gatskevich, E. I., Dvurechenskii, A. V., Efremov, M. D., Ivlev, G. D., Nikiforov, A. I., Orekhov, D. A., Yakimov, A. I.

Get full text

Liquid phase reflectivity under conditions of laser-induced silicon melting by Ivlev, G. D., Gatskevich, E. I.

Get full text