Single transistor technique for interface trap density measurement in irradiated MOS devices

Single transistor technique for interface trap density measurement in irradiated MOS devices

The effect of interface trap charge variation during measurement of the MOSFET current–voltage characteristic has been examined. Taking into account this effect, an interface trap density extraction technique is proposed. The transconductance degradation in this technique is caused not only by chann...

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Bibliographic Details
Published in:Microelectronics and reliability Vol. 39; no. 4; pp. 497 - 505
Main Authors: Pershenkov, V.S, Cherepko, S.V, Ivanov, R.E, Shalnov, A.V, Abramov, V.V
Format: Journal Article
Language:English
Published: Elsevier Ltd 1999
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Summary:The effect of interface trap charge variation during measurement of the MOSFET current–voltage characteristic has been examined. Taking into account this effect, an interface trap density extraction technique is proposed. The transconductance degradation in this technique is caused not only by channel mobility decrease, but also by I d( V g) curve distortion due to interface trapped charge variation during measurement. The analytical and numerical models for the effect are developed. The experimental data on channel mobility and interface trap density vs total dose are shown.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0026-2714
1872-941X
DOI:10.1016/S0026-2714(99)00020-7