Search Results - "Ivanov, A. P"

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  1. 1

    Nonstationary Delay in the Development of Oscillations of a Magnetostrictive Transducer under Conditions of Multiplication of the Excitation Frequency by Ivanov, A. P., Shavrov, V. G., Shcheglov, V. I.

    “…A numerical study of the delay in the excitation of oscillations of a magnetostrictive transducer in the frequency multiplication mode based on the model of…”
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  2. 2

    TCAD Simulation of High-Voltage 4H-SiC Diodes with an Edge Semi-Insulating Region by Ivanov, P. A., Lebedeva, N. M.

    Published in Semiconductors (Woodbury, N.Y.) (01-02-2021)
    “…The TCAD simulation of high-voltage 4 H -SiC-based p + – n – n + diodes with an edge semi-insulating i -type region created via the complete compensation for…”
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  3. 3

    Pommiez Operator in Spaces of Analytic Functions of Several Complex Variables by Ivanov, P. A., Melikhov, S. N.

    “…Pommiez operators in spaces of analytic functions of several complex variables are examined. Linear continuous operators that commute with the system of…”
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  4. 4

    First evidence of virus-like particles in the bacterial symbionts of Bryozoa by Vishnyakov, A. E., Karagodina, N. P., Lim-Fong, G., Ivanov, P. A., Schwaha, T. F., Letarov, A. V., Ostrovsky, A. N.

    Published in Scientific reports (08-01-2021)
    “…Bacteriophage communities associated with humans and vertebrate animals have been extensively studied, but the data on phages living in invertebrates remain…”
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  5. 5

    Complexes Formed via Bioconjugation of Genetically Modified TMV Particles with Conserved Influenza Antigen: Synthesis and Characterization by Gasanova, T. V., Koroleva, A. A., Skurat, E. V., Ivanov, P. A.

    Published in Biochemistry (Moscow) (01-02-2020)
    “…Recently we obtained complexes between genetically modified Tobacco Mosaic Virus (TMV) particles and proteins carrying conserved influenza antigen such as M2e…”
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  6. 6

    Edge-Termination Technique for High-Voltage Mesa-Structure 4H-SiC Devices: Negative Beveling by Lebedeva, N. M., Il’inskaya, N. D., Ivanov, P. A.

    Published in Semiconductors (Woodbury, N.Y.) (01-02-2020)
    “…The prospects for the protection of high-voltage 4 H -SiC-devices from edge breakdown via the formation of mesa structures with inclined walls (negative…”
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  7. 7

    Nonlinear Delay of Excitation of Oscillations of a Magnetostriction Transducer in the Frequency Multiplication Mode by Vlasov, V. S., Ivanov, A. P., Shavrov, V. G., Shcheglov, V. I.

    “…The problem of excitation of nonlinear forced oscillations of magnetization and elastic displacement in a ferrite plate of a magnetostriction transducer is…”
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  8. 8

    Simulation of Transient Processes in 4H-SiC Based Semiconductor Devices (Taking into Account the Incomplete Ionization of Dopants in the ATLAS Module of the SILVACO TCAD Software Package) by Ivanov, P. A., Potapov, A. S., Samsonova, T. P.

    Published in Semiconductors (Woodbury, N.Y.) (01-03-2019)
    “…Transient process in a resistor–capacitor (RC) circuit with a reverse-biased 4 H -SiC p – n diode as the capacitive element is simulated. Simulation is…”
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  9. 9

    Experience of application of IgY-technology for laboratory diagnostics of viral infections. by Ivanov, A P, Klebleeva, T D, Ivanova, O E

    Published in Voprosy virusologii (01-01-2020)
    “…The well-known advantages of class Y antibodies (IgY) from egg yolks of immunized hens in comparison with class G antibodies (IgG) of laboratory animals…”
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  10. 10

    High-Voltage 4H-SiC-Based Avalanche Diodes with a Negative Bevel by Ivanov, P. A., Lebedeva, N. M., Il’inskaya, N. D., Samsonova, T. P., Kon’kov, O. I.

    Published in Semiconductors (Woodbury, N.Y.) (01-04-2021)
    “…High-voltage avalanche p + – p – n 0 – n + diodes based on 4 H –SiC are fabricated. The diodes are made in the form of mesa structures with flat side walls…”
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  11. 11

    Correction of the Reverse Recovery Characteristics of High-Voltage 4H-SiC Junction Diodes Using Proton Irradiation by Ivanov, P. A., Kudoyarov, M. F., Potapov, A. S., Samsonova, T. P.

    Published in Semiconductors (Woodbury, N.Y.) (01-06-2019)
    “…The effect of proton irradiation on the electrical characteristics of high-voltage (3 kV) 4 H -SiC junction diodes is studied. The diodes are irradiated…”
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  12. 12

    High-Voltage Fast Recovery Avalanche Diodes on Silicon Carbide by Ivanov, P. A., Samsonova, T. P., Potapov, A. S., Kudoyarov, M. F.

    “…This paper describes the laboratory samples of high-voltage (1560 V) fast recovery (20 ns) avalanche diodes based on silicon carbide (SiC). It is shown that…”
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  13. 13

    The 2010 outbreak of poliomyelitis in Tajikistan: epidemiology and lessons learnt by Yakovenko, M L, Gmyl, A P, Ivanova, O E, Eremeeva, T P, Ivanov, A P, Prostova, M A, Baykova, O Y, Isaeva, O V, Lipskaya, G Y, Shakaryan, A K, Kew, O M, Deshpande, J M, Agol, V I

    “…A large outbreak of poliomyelitis, with 463 laboratory-confirmed and 47 polio-compatible cases, took place in 2010 in Tajikistan. Phylogenetic analysis of the…”
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  14. 14

    High-Voltage 4H-SiC Schottky Diodes with Field-Plate Edge Termination by Ivanov, P. A., Lebedeva, N. M., Il’inskaya, N. D., Kudoyarov, M. F., Samsonova, T. P., Kon’kov, O. I., Zadiranov, Yu. M.

    Published in Semiconductors (Woodbury, N.Y.) (01-02-2021)
    “…High-voltage (2000V) 4 H -SiC Schottky diodes are fabricated. To suppress the premature breakdown at the edge of diode structures, a field plate is formed as…”
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  15. 15

    Effect of Low-Dose Proton Irradiation on the Electrical Characteristics of 4H-SiC Junction Diodes by Ivanov, P. A., Potapov, A. S., Kudoyarov, M. F., Samsonova, T. P.

    Published in Semiconductors (Woodbury, N.Y.) (01-10-2018)
    “…The effect of low-dose proton irradiation (irradiation dose 10 10 –1 . 8 × 10 11 cm –2 ) on the capacitance–voltage, forward current–voltage, and…”
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  16. 16

    Formation of SiC Mesastructures with Gently Sloping Sidewalls by Dry Selective Etching through a Photoresist Mask by Lebedeva, N. M., Samsonova, T. P., Il’inskaya, N. D., Troshkov, S. I., Ivanov, P. A.

    Published in Technical physics (01-06-2020)
    “…We have demonstrated that SiC mesastructures with gently sloping sidewalls form with the help of selective reactive ion etching (RIE) of silicon carbide…”
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  17. 17

    Impact of High-Energy Electron Irradiation on Surge Currents in 4H-SiC JBS Schottky Diodes by Lebedev, A. A., Kozlovski, V. V., Ivanov, P. A., Levinshtein, M. E., Zubov, A. V.

    Published in Semiconductors (Woodbury, N.Y.) (01-10-2019)
    “…The effect of irradiation with high-energy (0.9 MeV) electrons on surge currents in high-voltage (operating voltage 1700 V) 4 H -SiC Schottky p-n diodes is…”
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  18. 18

    Development of inactivated cultural yellow fever vaccine by Ivanov, A. P., Klebleeva, T. D., Rogova, Y. V., Ivanova, O. E.

    Published in Voprosy virusologiĭ (17-09-2020)
    “…Introduction. The only currently available live vaccine against yellow fever (YF) based on chicken embryos infected with an attenuated 17D strain of the YF…”
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  19. 19

    Micro-profiling of 4H-SiC by Dry Etching to Form a Schottky Barrier Diode by Il’inskaya, N. D., Lebedeva, N. M., Zadiranov, Yu. M., Ivanov, P. A., Samsonova, T. P., Kon’kov, O. I., Potapov, A. S.

    Published in Semiconductors (Woodbury, N.Y.) (2020)
    “…Methods of micro-profiling of 4 H -SiC are described: formation of mesa structures with inclined walls (off-vertical wall inclination angle exceeding 45°) by…”
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  20. 20

    Proof of Stability in the Brower–Paul Problem by Ivanov, A. P.

    Published in Doklady. Mathematics (01-11-2021)
    “…We study the stability of equilibrium in the problem known as “a ball on a rotating saddle,” which was first considered by the famous Dutch mathematician…”
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