Search Results - "Ivan G. Ivanov"

Developing silicon carbide for quantum spintronics by Son, Nguyen T., Anderson, Christopher P., Bourassa, Alexandre, Miao, Kevin C., Babin, Charles, Widmann, Matthias, Niethammer, Matthias, Ul Hassan, Jawad, Morioka, Naoya, Ivanov, Ivan G., Kaiser, Florian, Wrachtrup, Joerg, Awschalom, David D.

“…In current long-distance communications, classical information carried by large numbers of particles is intrinsically robust to some transmission losses but…”
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High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide by Nagy, Roland, Niethammer, Matthias, Widmann, Matthias, Chen, Yu-Chen, Udvarhelyi, Péter, Bonato, Cristian, Hassan, Jawad Ul, Karhu, Robin, Ivanov, Ivan G., Son, Nguyen Tien, Maze, Jeronimo R., Ohshima, Takeshi, Soykal, Öney O., Gali, Ádám, Lee, Sang-Yun, Kaiser, Florian, Wrachtrup, Jörg

“…Scalable quantum networking requires quantum systems with quantum processing capabilities. Solid state spin systems with reliable spin–optical interfaces are a…”
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Electrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum Optoelectronic Device by Widmann, Matthias, Niethammer, Matthias, Fedyanin, Dmitry Yu, Khramtsov, Igor A, Rendler, Torsten, Booker, Ian D, Ul Hassan, Jawad, Morioka, Naoya, Chen, Yu-Chen, Ivanov, Ivan G, Son, Nguyen Tien, Ohshima, Takeshi, Bockstedte, Michel, Gali, Adam, Bonato, Cristian, Lee, Sang-Yun, Wrachtrup, Jörg

“…Color centers with long-lived spins are established platforms for quantum sensing and quantum information applications. Color centers exist in different charge…”
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Energy levels and charge state control of the carbon antisite-vacancy defect in 4H-SiC by Son, Nguyen Tien, Stenberg, Pontus, Jokubavicius, Valdas, Abe, Hiroshi, Ohshima, Takeshi, Ul Hassan, Jawad, Ivanov, Ivan G.

“…The carbon antisite-vacancy pair (CSiVC) in silicon carbide (SiC) has recently emerged as a promising defect for applications in quantum communication. In the…”
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An Optimization Precise Model of Stroke Data to Improve Stroke Prediction by Ivanov, Ivan G, Kumchev, Yordan, Hooper, Vincent James

“…Stroke is a major public health issue with significant economic consequences. This study aims to enhance stroke prediction by addressing imbalanced datasets…”
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Ultra-narrow inhomogeneous spectral distribution of telecom-wavelength vanadium centres in isotopically-enriched silicon carbide by Cilibrizzi, Pasquale, Arshad, Muhammad Junaid, Tissot, Benedikt, Son, Nguyen Tien, Ivanov, Ivan G., Astner, Thomas, Koller, Philipp, Ghezellou, Misagh, Ul-Hassan, Jawad, White, Daniel, Bekker, Christiaan, Burkard, Guido, Trupke, Michael, Bonato, Cristian

“…Spin-active quantum emitters have emerged as a leading platform for quantum technologies. However, one of their major limitations is the large spread in…”
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On the Iterative Methods for the Solution of Three Types of Nonlinear Matrix Equations by Ivanov, Ivan G., Yang, Hongli

“…In this paper, we investigate the iterative methods for the solution of different types of nonlinear matrix equations. More specifically, we consider iterative…”
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Conditions and a computation method of the constrained regulation problem for a class of fractional-order nonlinear continuous-time systems by Si, Xindong, Yang, Hongli, Ivanov, Ivan G.

“…The constrained regulation problem (CRP) for fractional-order nonlinear continuous-time systems is investigated. New existence conditions of a linear feedback…”
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Spin-relaxation times exceeding seconds for color centers with strong spin-orbit coupling in SiC by Gilardoni, Carmem M, Bosma, Tom, van Hien, Danny, Hendriks, Freddie, Magnusson, Björn, Ellison, Alexandre, Ivanov, Ivan G, Son, N T, van der Wal, Caspar H

“…Spin-active color centers in solids show good performance for quantum technologies. Several transition-metal defects in SiC offer compatibility with telecom…”
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Constrained State Regulation Problem of Descriptor Fractional-Order Linear Continuous-Time Systems by Yang, Hongli, Si, Xindong, Ivanov, Ivan G.

“…This paper deals with the constrained state regulation problem (CSRP) of descriptor fractional-order linear continuous-time systems (DFOLCS) with order 0<α<1…”
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Calibration on wide-ranging aluminum doping concentrations by photoluminescence in high-quality uncompensated p-type 4H-SiC by Asada, Satoshi, Kimoto, Tsunenobu, Ivanov, Ivan G.

“…Previous work has shown that the concentration of shallow dopants in a semiconductor can be estimated from the photoluminescence (PL) spectrum by comparing the…”
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In-situ terahertz optical Hall effect measurements of ambient effects on free charge carrier properties of epitaxial graphene by Knight, Sean, Hofmann, Tino, Bouhafs, Chamseddine, Armakavicius, Nerijus, Kühne, Philipp, Stanishev, Vallery, Ivanov, Ivan G., Yakimova, Rositsa, Wimer, Shawn, Schubert, Mathias, Darakchieva, Vanya

“…Unraveling the doping-related charge carrier scattering mechanisms in two-dimensional materials such as graphene is vital for limiting parasitic electrical…”
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Stable and metastable Si negative-U centers in AlGaN and AlN by Trinh, Xuan Thang, Nilsson, Daniel, Ivanov, Ivan G., Janzén, Erik, Kakanakova-Georgieva, Anelia, Son, Nguyen Tien

“…Electron paramagnetic resonance studies of Si-doped AlxGa1−xN (0.79 ≤ x ≤ 1.0) reveal two Si negative-U (or DX) centers, which can be separately observed for x…”
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Single Domain 3C-SiC Growth on Off-Oriented 4H-SiC Substrates by Jokubavicius, Valdas, Yazdi, Gholam R, Liljedahl, Rickard, Ivanov, Ivan G, Sun, Jianwu, Liu, Xinyu, Schuh, Philipp, Wilhelm, Martin, Wellmann, Peter, Yakimova, Rositsa, Syväjärvi, Mikael

“…We investigated the formation of structural defects in thick (∼1 mm) cubic silicon carbide (3C-SiC) layers grown on off-oriented 4H-SiC substrates via a…”
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The Influence of Carbon on Polytype and Growth Stability of Epitaxial Hexagonal Boron Nitride Films by Sharma, Sachin, Palisaitis, Justinas, Ivanov, Ivan G., Persson, Per O.Å., Pedersen, Henrik, Högberg, Hans

“…Boron nitride (BN) is a promising 2D material as well as a potential wide‐bandgap semiconductor. Chemical vapor deposition (CVD) is commonly used to deposit…”
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Identification and tunable optical coherent control of transition-metal spins in silicon carbide by Bosma, Tom, Lof, Gerrit J. J., Gilardoni, Carmem M., Zwier, Olger V., Hendriks, Freddie, Magnusson, Björn, Ellison, Alexandre, Gällström, Andreas, Ivanov, Ivan G., Son, N. T., Havenith, Remco W. A., van der Wal, Caspar H.

“…Color centers in wide-bandgap semiconductors are attractive systems for quantum technologies since they can combine long-coherent electronic spin and bright…”
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Exhaustive characterization of modified Si vacancies in 4H-SiC by Davidsson, Joel, Babar, Rohit, Shafizadeh, Danial, Ivanov, Ivan G., Ivády, Viktor, Armiento, Rickard, Abrikosov, Igor A.

“…The negatively charged silicon vacancy in silicon carbide is a well-studied point defect for quantum applications. At the same time, a closer inspection of…”
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Bioactivity Potential of Industrial Sunflower Meal Ethanol-Wash Solute Obtained as Waste from Protein Isolation Process by Ivanova, Petya, Ivanov, Ivan G., Tumbarski, Yulian, Kalaydzhiev, Hristo, Dincheva, Ivayla N., Chalova, Vesela I.

“…Industrial sunflower meal is rich in secondary metabolites, which negatively influence the quality and functional properties of respective protein isolates. To…”
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Interval Methods with Fifth Order of Convergence for Solving Nonlinear Scalar Equations by Ivanov, Ivan, Mateva, Tonya

“…In this paper, based on Kou’s classical iterative methods with fifth-order of convergence, we propose new interval iterative methods for computing a real root…”
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Defects in silicon carbide grown by fluorinated chemical vapor deposition chemistry by Stenberg, Pontus, Booker, Ian D., Karhu, Robin, Pedersen, Henrik, Janzén, Erik, Ivanov, Ivan G.

“…Point defects in n- and p-type 4H-SiC grown by fluorinated chemical vapor deposition (CVD) have been characterized optically by photoluminescence (PL) and…”
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