Search Results - "Itoga, Toshihiko"

X-Ray photoelectron spectroscopy study of native oxidation on misoriented Si(100) by YANO, F, ITOGA, T, KANEHORI, K

“…Native oxidation on Si(100) misoriented by about 4 degrees toward [011], which is often used as a substrate for ULSI fabrications, is investigated. On the…”
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A ceramic plasma torch for determining silicon content in HF solutions by inductively coupled plasma atomic emission spectrometry by MATSUBARA, A, KOJIMA, H, ITOGA, T, KANEHORI, K

“…A ceramic plasma torch has been developed for plasma spectrometers–such as an inductively coupled plasma atomic emission spectrometer (ICP-AES) or an…”
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The Effect of Isopropyl Alcohol Adsorption on the Electrical Characteristics of Thin Oxide by Motai, Kumi, Itoga, Toshihiko, Irie, Takashi

“…The effect of isopropyl alcohol (IPA) adsorption on the electrical characteristics of thin oxide has been investigated. Metal-oxide-semiconductor (MOS)…”
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New Technique to Determine Gettering Efficiency of Heavy Metals and Its Application to Carbon-Ion-Implanted Si Epitaxial Wafers by Itoga, Toshihiko, Hozawa, Kazuyuki, Takeda, Kazuo, Isomae, Seiichi, Ohkura, Makoto

“…Using a newly developed method to evaluate the gettering efficiency of Si wafers, we found that C-ion implantation prior to epitaxial growth greatly improves…”
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12.1: 45°C Low-Temperature Poly-Si TFT Fabrication Process Applicable to the Display Manufacturing Using 730×920mm2 Glass Substrates by Ohkura, Makoto, Shimomura, Shigeo, Miyazawa, Toshio, Itoga, Toshihiko, Shiba, Takeo

“…450°C low temperature poly‐Si TFT fabrication process is developed. The process without substrate compaction enables us to use non‐preannealed glass substrate…”
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X‐ray photoelectron spectroscopy study of submonolayer native oxides on HF‐treated Si surfaces by Yano, Fumiko, Hiraoka, Akiko, Itoga, Toshihiko, Kojima, Hisao, Kanehori, Keiichi, Mitsui, Yasuhiro

“…This article investigates, by a novel spectral analysis technique, the possibility of applying conventional x‐ray photoelectron spectroscopy to characterize…”
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Advantages of fluorine introduction in boron implanted shallow p+/n-junction formation by OHYU, K, ITOGA, T, NATSUAKI, N

“…The advantages of fluorine introduction on fabrication of shallow p + /n-junctions have been demonstrated. This was done by implanting fluorine onto the boron…”
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Influence of ion-implantation on native oxidation of Si in a clean-room atmosphere by Yano, Fumiko, Hiraoka, Akiko, Itoga, Toshihiko, Kojima, Hisao, Kanehori, Keiichi, Mitsui, Yasuhiro

“…We investigated the native oxidation of ion-implanted Si(100) surfaces in anticipation of a future necessity for controlling native oxidation during…”
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Degradation of n+/p junction characteristics by aluminum contamination by ITOGA, T, KOJIMA, H, HIRAIWA, A, OHKURA, M

“…This paper discusses the effects of Al contamination on n + /p junction characteristics. The Al contamination occurs during ion implantation and the level can…”
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The increase of the native oxide thickness on H-terminated Si surfaces by gaseous contamination in a clean room atmosphere by ITOGA, T, KOJIMA, H, YUGAMI, J, OHKURA, M

“…Gaseous impurities in a clean room (CR) atmosphere cause an increase in the native oxide thickness on H-terminated Si surfaces. The increase effect of ammonia…”
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Development of ammonia adsorption filter and its application to LSI manufacturing environment by SAIKI, A, OSHIO, R, SUZUKI, M, TANAKA, A, ITOGA, T, YAMANAKA, R

“…Activated carbon treated with a hydrogen salt is found to be effective in suppressing ammonia concentration in LSI cleanrooms. The hydrogen salt which contains…”
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Ultra-shallow depth profiling of arsenic implants in silicon by hydride generation-inductively coupled plasma atomic emission spectrometry by MATSUBARA, A, KOJIMA, H, ITOGA, T, KANEHORI, K

“…High resolution depth profiling of arsenic (As) implanted into silicon wafers by a chemical technique is described. Silicon wafers are precisely etched through…”
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Photoluminescence and acceptor state of Na in ZnSe by ISSHIKI, M, ITOGA, T, MASUMOTO, K, MOCHIZUKI, K, UCHIDA, W

“…Sodium was incorporated into high-purity ZnSe single crystals by dipping the crystal into molten Se-base Na alloys. The I 1 Na line and two types of…”
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Improvement of SiO2/Si interface properties utilising fluorine ion implantation and drive-in diffusion by OHYU, K, ITOGA, T, NISHIOKA, Y, NATSUAKI, N

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X‐ray photoelectron spectroscopy study on native oxidation of As‐implanted Si (100) by Yano, Fumiko, Hiraoka, Akiko, Itoga, Toshihiko, Matsubara, Atsuko, Kojima, Hisao, Kanehori, Keiichi, Mitsui, Yasuhiro

“…The native oxidation of As‐implanted Si surfaces used in actual ultralarge scale integrated processes are investigated. Quantitative analysis of oxidation is…”
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12.1: 45°C Low‐Temperature Poly‐Si TFT Fabrication Process Applicable to the Display Manufacturing Using 730×920mm 2 Glass Substrates by Ohkura, Makoto, Shimomura, Shigeo, Miyazawa, Toshio, Itoga, Toshihiko, Shiba, Takeo

“…450°C low temperature poly‐Si TFT fabrication process is developed. The process without substrate compaction enables us to use non‐preannealed glass substrate…”
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P-6: A Design Robust Against Hot-carrier Stress for Low-temperature Poly-Si TFT LCDs Fabricated using a 450°C Process by Shiba, Takeo, Itoga, Toshihiko, Toyota, Yoshiaki, Ohkura, Makoto, Miyazawa, Toshio, Sakai, Takeshi

“…Degradation phenomena of low‐temperature poly‐Si thin film transistors (TFTs) under direct current (DC) and dynamic stress were thoroughly investigated, and a…”
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Scaling law in ULSI contamination control by Hiraiwa, A., Itoga, T.

“…The need for chemical contamination control for future LSI's is investigated by considering device failure mechanisms. The allowable contamination density is…”
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Fabrication and properties of one-mask-patterned ferroelectric integrated capacitors by Torii, Kazuyoshi, Shoji, Kenichi, Kawakami, Hiroshi, Kumihashi, Takao, Itoga, Toshihiko, Yokoyama, Natsuki, Moniwa, Masahiro, Kaga, Tooru, Fujisaki, Yoshihisa

“…A one‐mask‐patterned ferroelectric capacitor test structure designed with a 0.5‐μm feature size was fabricated. Oxygen plasma treatment after dry etching…”
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Improvement of SiO 2 /Si Interface Properties Utilising Fluorine Ion Implantation and Drive-in Diffusion by Ohyu, Kiyonori, Itoga, Toshihiko, Nishioka, Yasushiro, Natsuaki, Nobuyoshi

“…Thermal drive-in diffusion of ion-implanted F atoms has been employed to fluorinate SiO 2 /Si interfaces and thereby improve their electrical properties. The…”
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