Search Results - "Issaoui, R."

Epitaxial diamond on Ir/ SrTiO3/Si (001): From sequential material characterizations to fabrication of lateral Schottky diodes by Arnault, J.C., Lee, K.H., Delchevalrie, J., Penuelas, J., Mehmel, L., Brinza, O., Temgoua, S., Stenger, I., Letellier, J., Saint-Girons, G., Bachelet, R., Issaoui, R., Tallaire, A., Achard, J., Barjon, J., Eon, D., Ricolleau, C., Saada, S.

“…Advanced characterizations with combined analytical tools were carried out at the different stages of diamond heteroepitaxy on Ir/STO/Si (001) substrates…”
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Dislocation density reduction using overgrowth on hole arrays made in heteroepitaxial diamond substrates by Mehmel, L., Issaoui, R., Brinza, O., Tallaire, A., Mille, V., Delchevalrie, J., Saada, S., Arnault, J. C., Bénédic, F., Achard, J.

“…The growth of large-area diamond films with low dislocation density is a landmark in the fabrication of diamond-based power electronic devices or high-energy…”
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Ohmic graphite-metal contacts on oxygen-terminated lightly boron-doped CVD monocrystalline diamond by De Feudis, M., Mille, V., Valentin, A., Brinza, O., Tallaire, A., Tardieu, A., Issaoui, R., Achard, J.

“…A process to obtain ohmic contacts on oxygen-terminated lightly boron-doped CVD monocrystalline diamond films was developed. Samples were contacted by Ti/Au…”
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Microstructure and biological evaluation of nanocrystalline diamond films deposited on titanium substrates using distributed antenna array microwave system by Dekkar, D., Bénédic, F., Falentin-Daudré, C., Rangel, A., Issaoui, R., Migonney, V., Achard, J.

“…In this paper, the microstructure and biological properties through osteoblast cell viability and morphology study of Nano Crystalline Diamond (NCD) films…”
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Investigation of a distributed antenna array microwave system for the three-dimensional low-temperature growth of nanocrystalline diamond films by Dekkar, D., Bénédic, F., Falentin-Daudré, C., Brinza, O., Issaoui, R., Achard, J.

“…In this paper the aptitude of a distributed antenna array (DAA) microwave system composed of planar matrix sources for the NanoCrystalline Diamond (NCD) film…”
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Thick and widened high quality heavily boron doped diamond single crystals synthetized with high oxygen flow under high microwave power regime by Issaoui, R., Achard, J., William, L., Mehmel, L., Pinault Thaury, M.-A., Bénédic, F.

“…The aim of this paper is to optimize the growth conditions of thick boron doped diamond single crystals, which requires the use of high microware power density…”
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Thick boron doped diamond single crystals for high power electronics by Achard, J., Silva, F., Issaoui, R., Brinza, O., Tallaire, A., Schneider, H., Isoird, K., Ding, H., Koné, S., Pinault, M.A., Jomard, F., Gicquel, A.

“…Switch Mode Power Supply (SMPS) is now widely used for the control and conversion of electric power from one watt to several megawatts. In this context, the…”
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Freestanding CVD boron doped diamond single crystals: A substrate for vertical power electronic devices? by Achard, J., Issaoui, R., Tallaire, A., Silva, F., Barjon, J., Jomard, F., Gicquel, A.

“…The development of ‘all‐diamond’ devices for power electronics is attracting more and more interest as judged by the recent increase in the number of…”
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An assessment of contact metallization for high power and high temperature diamond Schottky devices by Koné, S., Schneider, H., Isoird, K., Thion, F., Achard, J., Issaoui, R., Msolli, S., Alexis, J.

“…Different metals W, Al, Ni and Cr were evaluated as Schottky contacts on the same p-type lightly boron doped homoepitaxial diamond layer. The current–voltage…”
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Boron acceptor concentration in diamond from excitonic recombination intensities by Barjon, J., Tillocher, T., Habka, N., Brinza, O., Achard, J., Issaoui, R., Silva, F., Mer, C., Bergonzo, P.

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Growth of thick heavily boron-doped diamond single crystals: Effect of microwave power density by Issaoui, R., Achard, J., Silva, F., Tallaire, A., Tardieu, A., Gicquel, A., Pinault, M. A., Jomard, F.

“…The fabrication of diamond-based vertical power devices which are the most suited for high current applications requires the use of thick heavily boron-doped…”
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Homoepitaxial boron-doped diamond with very low compensation by Barjon, J., Chikoidze, E., Jomard, F., Dumont, Y., Pinault-Thaury, M.-A., Issaoui, R., Brinza, O., Achard, J., Silva, F.

“…Homoepitaxial boron‐doped diamond layers grown by chemical vapor deposition on (100)‐oriented substrates are studied by Hall effect and resistivity…”
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Effect of current density and oil concentration on hydrodynamic aspects in electroflotation column during oil/water emulsion treatment by Issaoui, R., Ksentini, I., Kotti, M., Ben Mansour, L.

“…The objective of this work is to study the efficiency of electroflotation process by treatment of effluent from vegetable oil refining industry in the form of…”
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Dislocations and impurities introduced from etch-pits at the epitaxial growth resumption of diamond by Tallaire, A., Barjon, J., Brinza, O., Achard, J., Silva, F., Mille, V., Issaoui, R., Tardieu, A., Gicquel, A.

“…The fabrication of diamond-based electronic devices requires that several active layers with different doping concentrations are grown in different reactors…”
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CVD diamond Schottky barrier diode, carrying out and characterization by Koné, S., Civrac, G., Schneider, H., Isoird, K., Issaoui, R., Achard, J., Gicquel, A.

“…A p-type diamond Schottky barrier diode (SBD) on homoepitaxial CVD diamond is presented. The technologic steps required to carry out the experimental device…”
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Ionized Physical Vapour Deposition combined with PECVD, for synthesis of carbon–metal nanocomposite thin films by Tessier, P.Y., Issaoui, R., Luais, E., Boujtita, M., Granier, A., Angleraud, B.

“…Carbon–metal composite thin films were synthesized by a hybrid process combining magnetron sputtering and PECVD in an argon–methane plasma. Titanium was chosen…”
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Identification of etch-pit crystallographic faces induced on diamond surface by H2/O2 etching plasma treatment by Achard, J., Silva, F., Brinza, O., Bonnin, X., Mille, V., Issaoui, R., Kasu, M., Gicquel, A.

“…Even for samples exhibiting excellent electronic properties in terms of carrier mobility, sample‐to‐sample variability remains considerable and dislocation…”
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Growth strategies for widening thick heavily boron-doped (113)-oriented CVD diamond by Mesples-Carrère, R., Issaoui, R., Valentin, A., Banaigs, L., Brinza, O., Bénédic, F., Achard, J.

“…In the present study, a growth strategy allowing widening thick heavily boron doped (113)-oriented diamonds is proposed. It relies on a geometrical model…”
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How to measure the impacts of shared automated electric vehicles on urban mobility by Nemoto, Eliane Horschutz, Issaoui, Roukaya, Korbee, Dorien, Jaroudi, Ines, Fournier, Guy

“…•We applied sustainability and technology assessment concepts to measure SAEV impacts.•We present an integrative literature review on sustainable mobility…”
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Identification of etch‐pit crystallographic faces induced on diamond surface by H 2 /O 2 etching plasma treatment by Achard, J., Silva, F., Brinza, O., Bonnin, X., Mille, V., Issaoui, R., Kasu, M., Gicquel, A.

“…Abstract Even for samples exhibiting excellent electronic properties in terms of carrier mobility, sample‐to‐sample variability remains considerable and…”
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