Influence of Laser Plasma Soft X-Ray Irradiation on Crystallization of a-Si Film by Infrared Furnace Annealing

The influence of laser plasma soft X-ray (LPX) irradiation on crystallization of a-Si film by infrared (IR) furnace annealing is investigated. The crystallization temperature by LPX irradiation followed by IR annealing is lowered down to 420°C and the grain size increases up to 270 nm. This phenomen...

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Bibliographic Details
Published in:	MATERIALS TRANSACTIONS Vol. 51; no. 8; pp. 1490 - 1493
Main Authors:	Matsuo, Naoto, Isoda, Nobuya, Heya, Akira, Amano, Sho, Miyamoto, Shuji, Mochizuki, Takayasu, Kawamoto, Naoya
Format:	Journal Article
Language:	English
Published:	Sendai The Japan Institute of Metals and Materials 01-08-2010 Japan Science and Technology Agency
Subjects:	a-silicon Annealing bond relaxation Bonding Crystallization Density Furnaces Infrared infrared furnace annealing Infrared radiation Irradiation laser plasma soft X-ray Soft x-rays
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Summary:	The influence of laser plasma soft X-ray (LPX) irradiation on crystallization of a-Si film by infrared (IR) furnace annealing is investigated. The crystallization temperature by LPX irradiation followed by IR annealing is lowered down to 420°C and the grain size increases up to 270 nm. This phenomenon is related with the change in characteristics of a-Si film which is generated by the bond distortion and relaxation during the LPX irradiation. It was found that the LPX-irradiated film is constituted by the two different layers and the refractive index of upper layer was lower than that of under layer. The dangling bond density of a-Si film was also decreased by LPX irradiation to a-Si film. From these results, the crystallization mechanism is discussed.
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23
ISSN:	1345-9678 1347-5320 1347-5320
DOI:	10.2320/matertrans.M2010154