Search Results - "Islam, Zahabul"

Electro-strengthening of the additively manufactured Ti–6Al–4V alloy by Waryoba, Daudi, Islam, Zahabul, Reutzel, Ted, Haque, Aman

“…Structure-property-processing relationship has been studied in additively manufactured Ti–6Al–4V alloy. The processing was performed using in-situ electron…”
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Real-time visualization of GaN/AlGaN high electron mobility transistor failure at off-state by Islam, Zahabul, Haque, Aman, Glavin, Nicholas

“…Degradation and failure phenomena in high electron mobility transistors (HEMTs) are complex functions of electrical, thermal, and mechanical stresses as well…”
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Recrystallization mechanisms of Zircaloy-4 alloy annealed by electric current by Waryoba, Daudi, Islam, Zahabul, Wang, Baoming, Haque, Aman

“…In this paper we present recrystallization mechanisms in Zircaloy-4 alloy subjected to electric current annealing while maintaining the surface temperature…”
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A dimensionless number for high-throughput design of multi-principal element alloys in directed energy deposition by Islam, Zahabul, Nelaturu, Phalgun, Thoma, Dan J.

“…The present study demonstrates the development of a dimensionless number to predict the build height in the additive manufacturing technique of directed energy…”
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Enhancement of WSe2 FET Performance Using Low-Temperature Annealing by Islam, Zahabul, Kozhakhmetov, Azimkhan, Robinson, Joshua, Haque, Aman

“…In this study, we investigate a non-thermal annealing process for two-dimensional materials. Instead of high temperature, we exploit the electron wind force at…”
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Molecular dynamics simulations of defective CNT-polyethylene composite systems by Mahboob, Monon, Zahabul Islam, M.

“…•Mechanical properties of individual defective carbon nanotubes and nanocomposites are determined using MD simulation.•Mechanical properties of the amorphous…”
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A High-Throughput Method to Define Additive Manufacturing Process Parameters: Application to Haynes 282 by Islam, Zahabul, Agrawal, Ankur Kumar, Rankouhi, Behzad, Magnin, Collin, Anderson, Mark H., Pfefferkorn, Frank E., Thoma, Dan J.

“…This paper demonstrates how an analytical and experimental method can be used to rapidly define the additive manufacturing settings for a new alloy where the…”
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Electro-thermal co-design of β-(AlxGa1-x)2O3/Ga2O3 modulation doped field effect transistors by Chatterjee, Bikramjit, Song, Yiwen, Lundh, James Spencer, Zhang, Yuewei, Xia, Zhanbo, Islam, Zahabul, Leach, Jacob, McGray, Craig, Ranga, Praneeth, Krishnamoorthy, Sriram, Haque, Aman, Rajan, Siddharth, Choi, Sukwon

“…Ultra-wide bandgap β-gallium oxide (Ga2O3) devices are of considerable interest with potential applications in both power electronics and radio frequency…”
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Defects and grain boundary effects in MoS2: A molecular dynamics study by Islam, Zahabul, Haque, Aman

“…Mechanical properties of low-temperature large area chemical vapor deposited (CVD) transition metal dichalcogenides such as MoS2 are a function of…”
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Current density effects on the microstructure of zirconium thin films by Islam, Zahabul, Wang, Baoming, Haque, Aman

“…We investigate the effect of electrical current density below the electromigration failure limit in nanocrystalline zirconium thin films using in-situ…”
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Strain induced phase transformation in zirconium thin films by Islam, Zahabul, Haque, Aman

“…[Display omitted] While high temperature is known to transform zirconium from the hexagonal closed pack (hcp) to the body centered cubic (bcc) phase, there is…”
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Mechanical properties of defective carbon nanotube/polyethylene nanocomposites: A molecular dynamics simulation study by Islam, M. Zahabul, Mahboob, Monon, Lowe, Robert L.

“…Because of their remarkable performance properties and technological promise, polymer nanocomposites reinforced with single‐walled carbon nanotubes (SWCNTs)…”
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Synergy of elastic strain energy and electron wind force on thin film grain growth at room temperature by Islam, Zahabul, Gao, Huajian, Haque, Aman

“…Grain growth in polycrystalline materials is commonly achieved with thermal annealing. Here, we explore an alternate athermal route through a synergy of…”
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Low temperature annealing of metals with electrical wind force effects by Waryoba, Daudi, Islam, Zahabul, Wang, Baoming, Haque, Aman

“…Conventional annealing is a slow, high temperature process that involves heating atoms uniformly, i.e., in both defective and crystalline regions. This study…”
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Process optimization and scaling of molybdenum and tungsten in additive manufacturing techniques by Islam, Zahabul, Kunkel, William, Hatler, Caleb, Thoma, Dan J.

“…Metal additive manufacturing processes pose a daunting challenge in defining optimal process parameters that yield porosity defect-free, dense parts. This is…”
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Characterization of multi-material 316L-Hastelloy X fabricated via laser powder-bed fusion by Rankouhi, Behzad, Islam, Zahabul, Pfefferkorn, Frank E., Thoma, Dan J.

“…The aim of this work is to provide firsthand knowledge of 316 L stainless steel (316 L) and Hastelloy X (HX) multi-material processing via laser powder bed…”
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Microstructural processing of steel at ambient surface temperature by Kidd, James, Islam, Zahabul, Waryoba, Daudi, Haque, Aman

“…We provide evidence that microstructural processing of metallic materials can be achieved at lower temperatures by passing dc current and simultaneously…”
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Characterization of multi-material 316L-Hastelloy X fabricated via laser powder-bed fusion by Rankouhi, Behzad, Islam, Zahabul, Pfefferkorn, Frank E., Thoma, Dan J.

“…The aim of this work is to provide firsthand knowledge of 316 L stainless steel (316 L) and Hastelloy X (HX) multi-material processing via laser powder bed…”
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In Situ Observation of β-Ga 2 O 3 Schottky Diode Failure Under Forward Biasing Condition by Islam, Zahabul, Xian, Minghan, Haque, Aman, Ren, Fan, Tadjer, Marko, Glavin, Nicholas, Pearton, Stephen

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In Situ Observation of β-Ga2O3 Schottky Diode Failure Under Forward Biasing Condition by Islam, Zahabul, Xian, Minghan, Haque, Aman, Ren, Fan, Tadjer, Marko, Glavin, Nicholas, Pearton, Stephen

“…In this article, we investigate defect nucleation leading to device degradation in β-Ga 2 O 3 Schottky barrier diodes by operating them inside a transmission…”
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