Search Results - "Ishiguro, O."

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  1. 1

    Implantation temperature dependence of Si activation in AlGaN by Irokawa, Y., Ishiguro, O., Kachi, T., Pearton, S. J., Ren, F.

    Published in Applied physics letters (01-05-2006)
    “…Si + ion implantation at a total dose of 1.0 × 10 15 cm − 2 and multiple ion energies in the range of 30 - 190 keV into Al 0.13 Ga 0.87 N layers on sapphire…”
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    Journal Article
  2. 2

    DLTS study of n-type GaN grown by MOCVD on GaN substrates by Tokuda, Y., Matsuoka, Y., Ueda, H., Ishiguro, O., Soejima, N., Kachi, T.

    Published in Superlattices and microstructures (01-10-2006)
    “…Electron traps in n-type GaN layers grown homoepitaxially by MOCVD on free-standing GaN substrates have been characterized using DLTS for vertical Schottky…”
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    Journal Article
  3. 3

    Startup optimization of a combined cycle power plant based on cooperative fuzzy reasoning and a neural network by Matsumoto, H., Ohsawa, Y., Takahasi, S., Akiyama, T., Hanaoka, H., Ishiguro, O.

    Published in IEEE transactions on energy conversion (01-03-1997)
    “…A startup optimization control system for a gas and steam turbine combined cycle power plant is developed. The system can minimize startup time of the plant…”
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    Journal Article Conference Proceeding
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    An expert system for startup optimization of combined cycle power plants under NO/sub x/ emission regulation and machine life management by Matsumoto, H., Ohsawa, Y., Takahasi, S., Akiyama, T., Ishiguro, O.

    Published in IEEE transactions on energy conversion (01-06-1996)
    “…This paper proposes an expert system which optimizes the startup schedule for gas and steam turbine combined cycle power plants. The speed-up and load-up…”
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    Journal Article
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