Search Results - "Ishchenko, V D"

Topology of PbSnTe:In Layers Versus Indium Concentration by Ishchenko, D. V., Akimov, A. N., Akhundov, I. O., Golyashov, V. A., Klimov, A. E., Loginov, A. B., Loginov, B. A., Pashchin, N. S., Tarasov, A. S., Fedosenko, E. V., Sherstyakova, V. N.

“…The surface topology of epitaxial films of lead tin telluride solid solution (including with In additive, Pb 1 – x Sn x Te:In) has been examined using atomic…”
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Features of MIS Structures Based on Insulating PbSnTe:In Films with the Composition in the Vicinity of the Band Inversion Related to Their Ferroelectric Properties by Klimov, A. E., Akimov, A. N., Akhundov, I. O., Golyashov, V. A., Gorshkov, D. V., Ishchenko, D. V., Matyushenko, E. V., Neizvestny, I. G., Sidorov, G. Yu, Suprun, S. P., Tarasov, A. S., Tereshchenko, O. E., Epov, V.S.

“…The characteristics of metal-insulator-semiconductor (MIS) structures based on insulating PbSnTe:In films with compositions in the vicinity of band inversion…”
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Sign-Alternating Photoconductivity in PbSnTe:In Films in the Space-Charge-Limited Current Regime by Akimov, A. N., Akhundov, I. O., Ishchenko, D. V., Klimov, A. E., Neizvestny, I. G., Paschin, N. S., Suprun, S. P., Tarasov, A. S., Tereshchenko, O. E., Fedosenko, E. V., Sherstyakova, V. N.

“…The dependence of the photoconductivity sign on the bias voltage, intensity, and duration of illumination is studied for PbSnTe:In films in the…”
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Nonlinear Hall Coefficient in Films of a Three-Dimensional Topological Insulator by Stepina, N. P., Bazhenov, A. O., Shumilin, A. V., Zhdanov, E. Yu, Ishchenko, D. V., Kirienko, V. V., Aksenov, M. S., Tereshchenko, O. E.

“…The magnetoresistance and the Hall effect in transistor structures fabricated on films of the three-dimensional topological insulator (Bi,Sb) 2 (Te,Se) 3 are…”
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Radiative Recombination, Carrier Capture at Traps, and Photocurrent Relaxation in PbSnTe:In with a Composition Close to Band Inversion by Ishchenko, D. V., Neizvestny, I. G.

“…Based on the notions that PbSnTe:In is a direct-gap semiconductor, the radiative-recombination lifetime is calculated, and the photocurrent relaxation and…”
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Preparation of an Atomically Clean and Structurally Ordered Bi2Se3 (0001) Surface without Molecular Beams and Vacuum Cleaving by Tarasov, A. S., Golyashov, V. A., Akhundov, I. O., Ishchenko, D. V., Kozhukhov, A. S., Kokh, K. A., Tereshchenko, O. E.

“…In this study, an atomically clean and structurally ordered Bi 2 Se 3 (0001) surface is obtained without molecular beams and vacuum cleaving. It is shown that…”
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Origin of Degradation of the CaF2/BaF2 Buffer Layers on Si(111) by Neizvestny, I. G., Ishchenko, D. V., Akhundov, I. O., Suprun, S. P., Tereshchenko, O. E.

“…The growth temperature dependences of the capacitance–voltage characteristics and chemical stability of the CaF 2 /BaF 2 buffer layers formed on Si by…”
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A technique for the local doping and correction of the conductivity of PbSnTe epitaxial layers via indium diffusion from superficial nanometer-thick films by Ishchenko, D. V., Kuchumov, B. M.

“…A technique is described for the local indium doping of epitaxial films of a p -type PbSnTe solid solution to obtain a metal-insulator transition at…”
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Surface Сonductivity Dynamics in PbSnTe:In Films in the Vicinity of a Band Inversion by Klimov, A. E., Akimov, A. N., Akhundov, I. O., Golyashov, V. A., Gorshkov, D. V., Ishchenko, D. V., Sidorov, G. Yu, Suprun, S. P., Tarasov, A. S., Epov, V. S., Tereshchenko, O. E.

“…The features of transient processes under the field effect in PbSnTe:In films with a variation in the current up to a factor of 10 5 are studied at helium…”
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Modification of the Surface Properties of PbSnTe〈In〉 Epitaxial Layers with Composition near Band Inversion by Tarasov, A. S., Ishchenko, D. V., Akimov, A. N., Akhundov, I. O., Golyashov, V. A., Klimov, A. E., Pashchin, N. S., Suprun, S. P., Fedosenko, E. V., Sherstyakova, V. N., Tereshchenko, O. E.

“…High-resistance Pb 1 – x Sn x Te〈In〉 layers grown by molecular beam epitaxy on BaF 2 (111) substrates with compositions close to band inversion have been…”
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Features of the Current Flow in Injection Structures Based on PbSnTe:In Films by Ishchenko, D. V., Neizvestnyi, I. G., Pashchin, N. S., Sherstyakova, V. N.

“…This paper reports a study of the current–voltage ( I–V ) features of the p-i-p structures based on Pb 1– x Sn x Te:In films with the tin content х ≈ 0.31 in…”
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PbSnTe:In compound: Electron capture levels, galvanomagnetic properties, and THz sensitivity by Ishchenko, D. V., Klimov, A. E., Shumsky, V. N., Epov, V. S.

“…A model of the Pb 1– x Sn x Te:In compound, based on concepts of the theory of disordered systems is considered. The temperature dependences of the Fermi-level…”
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Toxicological characteristics of the preparation FORTICEPTTM Hoof Oinment by V. D. Ishchenko, A. M. Shevchenko, N. M. Slobodyuk, R. O. Vasiv, H. V. Yarova, Y. A. Ishchenko

“…Antibiotic resistance of the main infectious disease pathogens is one of the biggest problems of present time, which causes the need for searching for new…”
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Formation of well-ordered surfaces of Bi2-xSbxTe3-ySey topological insulators using wet chemical treatment by Tarasov, A.S., Kumar, N., Golyashov, V.A., Akhundov, I.O., Ishchenko, D.V., Kokh, K.A., Bazhenov, A.O., Stepina, N.P., Tereshchenko, O.E.

“…[Display omitted] •The surface preparation of topological insulators was carried out using a wet chemical method.•The presence of topological phases and…”
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Surface chemical treatment effect on (111) PbSnTe < In > Topological crystalline insulator films by Tarasov, A.S., Ishchenko, D.V., Akhundov, I.O., Golyashov, V.A., Klimov, A.E., Suprun, S.P., Fedosenko, E.V., Sherstyakova, V.N., Rybkin, A.G., Vilkov, O.Yu, Tereshchenko, O.E.

“…[Display omitted] •The chemical treatment of Pb1-xSn xTe (111) films with HCl-iPA solution removed native oxides.•Further annealing in vacuum led to the…”
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Morphofunctional changes in the internal organs of laying hens affected by chronic thiamethoxam intoxication by Dukhnytskyi, V. B., Horalskyi, L. P., Sokolyuk, V. M., Gutyj, B. V., Ishchenko, V. D., Ligomina, І. P., Kolesnik, N. L., Dzhmil, V. I.

“…Insecticides play an important role in agriculture, general sanitary and veterinary practices, providing protection of the plants and yield from harmful…”
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Current-coltage characteristics of PbSnTe:In films in a magnetic field with electron injection from the contacts by Ishchenko, D. V., Epov, V. S.

“…The current-voltage characteristics (CVC) of PbSnTe:In films with a tin content of x ≈ 0.29 at helium temperatures with unipolar injection from the contacts…”
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Field Effect and Spin-Valve Effect in the PbSnTe Topological Crystalline Insulator by Tarasov, A. S., Golyashov, V. A., Ishchenko, D. V., Akhundov, I. O., Klimov, A. E., Epov, V. S., Kaveev, A. K., Suprun, S. P., Sherstyakova, V. N., Tereshchenko, O. E.

“…The characteristics of MIS structures based on insulating PbSnTe:In films grown by molecular beam epitaxy (MBE) with compositions near the band inversion are…”
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Industrial prospects of Pb1 − x Sn x Te:In with x > 0.3 solid solutions for photodetectors with extended sensitivity spectral range by Akimov, A. N., Ishchenko, D. V., Klimov, A. E., Neizvestny, I. G., Pashchin, N. S., Sherstyakova, V. N., Shumsky, V. N.

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Terahertz detectors based on Pb1−xSnxTe:In films by Akimov, A. N., Ishchenko, D. V., Klimov, A. E., Neizvestny, I. G., Pashchin, N. S., Sherstyakova, V. N., Shumsky, V. N., Epov, V. S.

“…Results of experimental studies of Pb 1− x Sn x Te:In films grown by molecular beam epitaxy with the tin concentration close to band inversion are presented…”
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