Search Results - "Irom, F"

Single Event Effect Characterization of High Density Commercial NAND and NOR Nonvolatile Flash Memories by Irom, F., Nguyen, D.N.

“…Heavy ion single-event measurements on a variety of high density commercial NAND and NOR flash memories were reported. Three SEE phenomena were investigated:…”
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Extension of a Proton SEU Cross Section Model to Include 14 MeV Neutrons by Edmonds, L.D., Irom, F.

“…A model for estimating proton SEU cross sections from heavy-ion test data has been extended to include 14 MeV neutrons. Accuracy is less consistent for…”
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Destructive events in NAND Flash memories irradiated with heavy ions by Bagatin, M., Gerardin, S., Paccagnella, A., Cellere, G., Irom, F., Nguyen, D.N.

“…Besides being widely used in virtually all terrestrial applications requiring non-volatile storage, Flash memories are arousing increasing interest with…”
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Investigation of Single-Event Transients in Linear Voltage Regulators by Irom, F., Miyahira, T.F., Adell, P.C., Laird, J.S., Conder, B., Pouget, V., Essely, F.

“…Single-event transients (SETs) from heavy ions and laser beam are investigated for two positive adjustable linear voltage regulators: the RH117 from linear…”
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Frequency dependence of single-event upset in advanced commercial PowerPC microprocessors by Irom, F., Farmanesh, F.F.

“…Single-event upset (SEU) from heavy ions is measured for advanced commercial microprocessors in a dynamic mode with clock frequencies up to 1 GHz. Frequency…”
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Single-Event Upset and Scaling Trends in New Generation of the Commercial SOI PowerPC Microprocessors by Irom, F., Farmanesh, F., Kouba, C.K.

“…Single-event upset effects from heavy ions are measured for Motorola silicon-on-insulator (SOI) microprocessor with 90 nm feature sizes. The results are…”
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Single-Event Transients in Voltage Regulators by Johnston, A.H., Miyahira, T.F., Irom, F., Laird, J.S.

“…Single-event transients are investigated for two voltage regulator circuits that are widely used in space. A circuit-level model is developed that can be used…”
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Catastrophic latchup in a CMOS operational amplifier by Irom, F., Miyahira, T.F.

“…We report catastrophic single-event latchup results for a CMOS operational amplifier. Thermal and optical imagings in conjunction with current distributions…”
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Single-event upset in highly scaled commercial silicon-on-insulator PowerPC microprocessors by Irom, F., Farmanesh, F.H.

“…Single-event upset effects from heavy ions are measured for Motorola and IBM silicon-on-insulator (SOI) microprocessors with different feature sizes and core…”
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Single-event upset in commercial silicon-on-insulator PowerPC microprocessors by Irom, F., Farmanesh, F.F., Johnston, A.H., Swift, G.M., Millward, D.G.

“…Single-event upset effects from heavy ions and protons are measured for Motorola and IBM silicon-on-insulator (SOI) microprocessors, and compared with results…”
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Single-event upset in the PowerPC750 microprocessor by Swift, G.M., Fannanesh, F.F., Guertin, S.M., Irom, F., Millward, D.G.

“…Proton and heavy ion upset susceptibility has been measured individually for six types of storage elements in an advanced commercial processor, the PowerPC750,…”
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Radiation Effects in Flash Memories by Gerardin, S., Bagatin, M., Paccagnella, A., Grurmann, K., Gliem, F., Oldham, T. R., Irom, F., Nguyen, D. N.

“…We review ionizing radiation effects in Flash memories, the current dominant technology in the commercial non-volatile memory market. A comprehensive…”
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Single-event upset in evolving commercial silicon-on-insulator microprocessor technologies by Irom, F., Farmanesh, F.H., Swift, G.M., Johnston, A.H., Yoder, G.L.

“…Single-event upset effects from heavy ions are measured for Motorola and IBM silicon-on-insulator (SOI) microprocessors with different feature sizes and core…”
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Single-event transients in high-speed comparators by Johnston, A.H., Miyahira, T.F., Edmonds, L.D., Irom, F.

“…Single-event transients are investigated in comparators with switching speed below 80 ns, including one BiCMOS device. Modeling results show that the collapse…”
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Evaluation of Mechanisms in TID Degradation and SEE Susceptibility of Single- and Multi-Level High Density NAND Flash Memories by Irom, F., Nguyen, D. N., Harboe-Sorensen, R., Virtanen, A.

“…Heavy ion single-event measurements and total ionizing dose (TID) response for 8 Gb commercial NAND flash memories are reported. Radiation results of…”
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Catastrophic Failure in Highly Scaled Commercial NAND Flash Memories by Irom, F., Nguyen, D.N., Bagatin, M., Cellere, G., Gerardin, S., Paccagnella, A.

“…Heavy ion single-event measurements on a variety of high density commercial NAND flash memories are reported. Three single event effect (SEE) phenomena were…”
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Compendium of Single-Event Latchup and Total Ionizing Dose Test Results of Commercial Analog to Digital Converters by Irom, F., Agarwal, S. G.

“…This paper reports single-event latchup and total ionizing dose results for a variety of analog to digital converters targeted for possible use in NASA…”
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SEE and TID Response of Spansion 512Mb NOR Flash Memory by Irom, F., Nguyen, D. N.

“…Single event effect (SEE) and total ionizing dose (TID) response for Spansion 512Mb NOR flash memory are reported. Three SEE phenomena were investigated:…”
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Measurements on isovector giant resonances in pion charge exchange by Erell, A, Alster, J, Lichtenstadt, J, Moinester, MA, Bowman, JD, Cooper, MD, Irom, F, Matis, HS, Piasetzky, E, Sennhauser, U

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First Measurement of the Spin Rotation Parameter Q for p - Ca 40 Elastic Scattering at 500 MeV by Rahbar, A., Aas, B., Bleszynski, E., Bleszynski, M., Haji-Saeid, M., Igo, G. J., Irom, F., Pauletta, G., Wang, A. T. M., McClelland, J. B., Amann, J. F., Carey, T. A., Cornelius, W. D., Barlett, M., Hoffmann, G. W., Glashausser, C., Nanda, S., Gazzaly, M. M.

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