Search Results - "Irokawa, Y."

Hydrogen interaction with GaN metal–insulator–semiconductor diodes by Irokawa, Y.

“…Interaction mechanism of hydrogen with GaN metal–insulator–semiconductor (MIS) diodes is investigated, focusing on the metal/semiconductor interfaces. For MIS…”
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Characteristics of MgO/GaN gate-controlled metal–oxide– semiconductor diodes by Kim, Jihyun, Mehandru, R., Luo, B., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Irokawa, Y.

“…Gate-controlled n+p metal–oxide–semiconductor diodes were fabricated in p-GaN using MgO as a gate dielectric and Si+ implantation to create the n+ regions…”
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MgO /p- GaN enhancement mode metal-oxide semiconductor field-effect transistors by Irokawa, Y., Nakano, Y., Ishiko, M., Kachi, T., Kim, J., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Pan, C.-C., Chen, G.-T., Chyi, J.-I.

“…We report the initial demonstration of an enhancement mode MgO/p-GaN metal-oxide-semiconductor field-effect transistor (MOSFET) utilizing Si+ ion-implanted…”
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Inversion behavior in Sc2O3/GaN gated diodes by Kim, Jihyun, Mehandru, R., Luo, B., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Irokawa, Y.

“…The capacitance–voltage (C–V) characteristics of Sc2O3/p-GaN gate-controlled diodes show unusual hook shapes due to the charging of surface states. From the…”
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Implantation temperature dependence of Si activation in AlGaN by Irokawa, Y., Ishiguro, O., Kachi, T., Pearton, S. J., Ren, F.

“…Si + ion implantation at a total dose of 1.0 × 10 15 cm − 2 and multiple ion energies in the range of 30 - 190 keV into Al 0.13 Ga 0.87 N layers on sapphire…”
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Temperature dependence of forward current characteristics of GaN junction and Schottky rectifiers by Baik, K.H., Irokawa, Y., Ren, F., Pearton, S.J., Park, S.S., Park, Y.J.

“…A comparison was made of the forward current–voltage characteristics of bulk GaN Schottky and p–n junction rectifiers using a quasi-three-dimensional…”
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Current–voltage and reverse recovery characteristics of bulk GaN p-i-n rectifiers by Irokawa, Y., Luo, B., Kim, Jihyun, LaRoche, J. R., Ren, F., Baik, K. H., Pearton, S. J., Pan, C.-C., Chen, G.-T., Chyi, J.-I., Park, S. S., Park, Y. J.

“…p-i-n rectifiers were fabricated on epitaxial layers grown on free-standing GaN substrates. The forward turn-on voltage, VF was ∼5 V at 300 K and displayed a…”
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Electrical characteristics of GaN implanted with Si + at elevated temperatures by Irokawa, Y., Fujishima, O., Kachi, T., Pearton, S. J., Ren, F.

“…Si + implantation at multiple ion energies ( 30 - 360 keV ) into GaN for n -type doping was carried out at substrate temperatures from 27 to 700 ° C , followed…”
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160-A bulk GaN Schottky diode array by Baik, K. H., Irokawa, Y., Kim, Jihyun, LaRoche, J. R., Ren, F., Park, S. S., Park, Y. J., Pearton, S. J.

“…Pt Schottky rectifier arrays were fabricated on 200-μm-thick, freestanding GaN layers. Even with the reduced dislocation density in these layers (∼105 cm−2)…”
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Activation characteristics of ion-implanted Si + in AlGaN by Irokawa, Y., Fujishima, O., Kachi, T., Pearton, S. J., Ren, F.

“…Multiple-energy Si + implantation in the range 30-360 keV into Al 0.13 Ga 0.87 N for n -type doping was carried out at room temperature, followed by annealing…”
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Hydrogen interaction with GaN metalainsulatorasemiconductor diodes by Irokawa, Y

“…Interaction mechanism of hydrogen with GaN metalainsulatorasemiconductor (MIS) diodes is investigated, focusing on the metal/semiconductor interfaces. For MIS…”
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Temperature dependent characteristics of bulk GaN Schottky rectifiers on free-standing GaN substrates by Kang, B. S., Ren, F., Irokawa, Y., Baik, K. W., Pearton, S. J., Pan, C.-C., Chen, G.-T., Chyi, J.-I., Ko, H.-J., Lee, H.-Y.

“…The performance of Schottky rectifiers fabricated with dielectric overlap edge termination on epitaxial layers grown on a free-standing GaN template is…”
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Activation kinetics of implanted Si+ in GaN and application to fabricating lateral Schottky diodes by Irokawa, Y., Kim, Jihyun, Ren, F., Baik, K. H., Gila, B. P., Abernathy, C. R., Pearton, S. J., Pan, C.-C., Chen, G.-T., Chyi, J.-I.

“…The electrical activation characteristics of implanted Si+ in GaN were investigated as a function of annealing temperature (1000 °C–1200 °C). The maximum…”
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Edge termination design and simulation for bulk GaN rectifiers by Baik, K. H., Irokawa, Y., Ren, F., Pearton, S. J., Park, S. S., Lee, S. K.

“…GaN bulk rectifiers show excellent on-state resistances (in the m Ω  cm −2 range), forward turn-on voltages of ∼1.8 V and reverse-recovery times of <50 ns. A…”
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Design of junction termination structures for GaN Schottky power rectifiers by Baik, K.H., Irokawa, Y., Ren, F., Pearton, S.J., Park, S.S., Park, Y.J.

“…Junction termination extension (JTE) structures for GaN power Schottky rectifiers were investigated using a quasi-three-dimensional simulator. The use of…”
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Si + ion implanted MPS bulk GaN diodes by Irokawa, Y., Kim, J., Ren, F., Baik, K.H., Gila, B.P., Abernathy, C.R., Pearton, S.J., Pan, C.-C., Chen, G.-T., Chyi, J.-I., Park, S.S.

“…The fabrication of GaN merged p–i–n/Schottky (MPS) diodes using Si + ion implantation into p-epi layers on bulk, free-standing GaN substrates is reported…”
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Lateral Schottky GaN rectifiers formed by Si+ ion implantation by IROKAWA, Y, JIHYUN KIM, REN, F, BAIK, K. H, GILA, B. P, ABERNATHY, C. R, PEARTON, S. J, PAN, C.-C, CHEN, G.-T, CHYI, J.-I

“…Type conversion of p-GaN by direct Si+ ion implantation and subsequent annealing was demonstrated by the fabrication of lateral Schottky diodes. The Si+…”
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Growth of 3C-SiC Layers on Si Substrates with a Novel Stress Relaxation Structure by Irokawa, Yoshihiro, Kodama, Masahito, Kachi, Tetsu

“…Silicon (Si) substrates having cavities immediately beneath the surface layer were used as a stress relaxation structure in 3C-SiC heteroepitaxial growth on Si…”
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Hydrogen sensors based on GaN diodes: The sensing mechanism by Irokawa, Y.

“…In this paper, interaction mechanism of hydrogen with GaN metal-insulator-semiconductor (MIS) diodes has been investigated, focusing on the metal/semiconductor…”
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RHEED-ISS study on the Zr-O/W (100) surface at high temperature by IROKAWA, Y, MITSUHASHI, R, LEE, S. C, KIMURA, Y, INOUE, M, TAKAI, Y, SHIMIZU, R

“…The surface structures of Zr-O/W (100) (oxygen processing at approx1700K in an oxygen partial pressure of approx3mult10 exp -4 Pa followed by subsequent…”
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