Search Results - "Iriarte, G.F."

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  1. 1

    Synthesis of c-axis oriented AlN thin films on different substrates: A review by Iriarte, G.F., Rodríguez, J.G., Calle, F.

    Published in Materials research bulletin (01-09-2010)
    “…Highly c-axis oriented AlN thin films have been deposited by reactive sputtering on different substrates. The crystallographic properties of layered film…”
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    Journal Article
  2. 2

    High precision pressure sensors based on SAW devices in the GHz range by Rodríguez-Madrid, J.G., Iriarte, G.F., Williams, O.A., Calle, F.

    “…► We deposit AlN on free standing diamond substrates for sensors applications. ► The deposit of AlN on diamond has been optimized for different film…”
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    Journal Article
  3. 3

    Optimization of AlN thin layers on diamond substrates for high frequency SAW resonators by Rodríguez-Madrid, J.G., Iriarte, G.F., Araujo, D., Villar, M.P., Williams, O.A., Müller-Sebert, W., Calle, F.

    Published in Materials letters (2012)
    “…AlN/diamond heterostructures are very promising for high frequency surface acoustic wave (SAW) resonators. In their design, the thickness of the piezoelectric…”
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    Journal Article
  4. 4

    Growth of nickel silicide (NiSix) nanowires by silane decomposition by Iriarte, G.F.

    Published in Current applied physics (2011)
    “…Growth of single crystal nickel-silicide (NiSix) nanowires has been achieved on inert amorphous SiO 2 and Si 3N 4 substrates covered with nanometer-size Ni…”
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    Journal Article
  5. 5
  6. 6

    Synthesis of c-axis-oriented AlN thin films on high-conducting layers: Al, Mo, Ti, TiN, and Ni by Iriarte, G.F., Bjurstrom, J., Westlinder, J., Engelmark, F., Katardjiev, I.V.

    “…Thin piezoelectric polycrystalline films such as AlN, ZnO, etc., are of great interest for the fabrication of thin film bulk/surface acoustic resonators…”
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    Journal Article
  7. 7

    SAW COM-parameter extraction in AlN/diamond layered structures by Iriarte, G.F., Engelmark, F., Katardjiev, I.V., Plessky, V., Yantchev, V.

    “…Highly c-axis oriented aluminum nitride (AlN) thin piezoelectric films have been grown on polycrystalline diamond substrates by pulsed direct current (DC)…”
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    Journal Article
  8. 8

    Electrical characterization of AlN MIS and MIM structures by Engelmark, F., Westlinder, J., Iriarte, G.F., Katardjiev, I.V., Olsson, J.

    Published in IEEE transactions on electron devices (01-05-2003)
    “…Aluminum nitride (AlN) thin films have been deposited on p-Si[100] and Mo-Si[100] substrates. The sputter deposited Mo was polycrystalline, predominantly…”
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    Journal Article
  9. 9

    Influence of deposition parameters on the stress of magnetron sputter-deposited AlN thin films on Si(100) substrates by Iriarte, G.F., Engelmark, F., Ottosson, M., Katardjiev, I.V.

    Published in Journal of materials research (01-02-2003)
    “…In this work, a systematic study of the influence of five deposition parameters, i.e., process pressure, substrate temperature, target power, and substrate…”
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    Journal Article
  10. 10

    Fabrication of sub-100 nm IDT SAW devices on insulating, semiconducting and conductive substrates by Iriarte, G.F., Rodriguez-Madrid, J.G., Calle, F.

    Published in Journal of materials processing technology (01-03-2012)
    “…This work describes the electron-beam (e-beam) lithography process developed to manufacture nano interdigital transducers (IDTs) to be used in high frequency…”
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    Journal Article
  11. 11
  12. 12

    Growth of nickel disilicide nanowires by CVD by Iriarte, G.F.

    Published in Journal of non-crystalline solids (15-05-2010)
    “…A systematic study of the influence of the process parameters on the growth of nickel disilicide (NiSi 2) nanowires by CVD (Chemical Vapor Deposition) has been…”
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    Journal Article
  13. 13

    Influence of substrate crystallography on the room temperature synthesis of AlN thin films by reactive sputtering by Iriarte, G.F., Reyes, D.F., González, D., Rodriguez, J.G., García, R., Calle, F.

    Published in Applied surface science (01-09-2011)
    “…► High-quality polycrystalline films with preferred c-axis orientation have been grown successfully on silicon and Au/Si substrates. ► AlN grew off-axis from…”
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    Journal Article
  14. 14

    Diamond underlayer microstructure effect on the orientation of AlN piezoelectric layers for high frequency SAW resonators by TEM by Lloret, F., Araújo, D., Villar, M.P., Rodríguez-Madrid, J.G., Iriarte, G.F., Williams, O.A., Calle, F.

    Published in Microelectronic engineering (01-12-2013)
    “…[Display omitted] •AlN grain has lattice orientation of their c-axis perpendicular to the interface.•After 0.5micron, the c-axis is roughly well oriented for…”
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    Journal Article
  15. 15

    Synthesis of c-axis oriented AlN thin films on metal layers: Al, Mo, Ti, TiN and Ni by Iriarte, G.F., Bjurstrom, J., Westlinder, J., Engelmark, F., Katardjiev, I.V.

    “…Thin piezoelectric polycrystalline films such as AlN, ZnO, etc are of great interest for the fabrication of Thin Film Bulk/Surface Acoustic Resonators (TFBAR)…”
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    Conference Proceeding