Search Results - "Ionescu, A.M."

Lateral Strain Profile as Key Technology Booster for All-Silicon Tunnel FETs by Boucart, K., Riess, W., Ionescu, A.M.

“…In this letter, we propose a lateral asymmetric strain profile in a silicon nanowire or ultrathin silicon film as a key technology booster for the performance…”
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NanoElectronics roadmap for Europe: From nanodevices and innovative materials to system integration by Ahopelto, J., Ardila, G., Baldi, L., Balestra, F., Belot, D., Fagas, G., De Gendt, S., Demarchi, D., Fernandez-Bolaños, M., Holden, D., Ionescu, A.M., Meneghesso, G., Mocuta, A., Pfeffer, M., Popp, R.M., Sangiorgi, E., Sotomayor Torres, C.M.

“…•This paper introduces the new NanoElectronics Roadmap for Europe covering topics from Nanodevices beyond CMOS and Innovative Materials to system Integration…”
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Analytical modeling of single electron transistor for hybrid CMOS-SET analog IC design by Mahapatra, S., Vaish, V., Wasshuber, C., Banerjee, K., Ionescu, A.M.

“…A physically based compact analytical single electron transistor (SET) model is proposed for hybrid CMOS-SET analog circuit simulation. The modeling approach…”
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Influence of on-off pulsed current pattern on processes during spark plasma sintering of MgB2 superconductor by Aldica, G., Sandu, V., Popa, S., Pasuk, I., Enculescu, M., Ionescu, A.M., Badica, P.

“…High density samples (92–94.5 %) of MgB2 were prepared by Spark Plasma Sintering (SPS). The on-off pulsed current patterns of SPS processing were 8–4, 12–2,…”
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Identification of a novel target, FOXA2, in the onset and development of osteoarthritis by Ionescu, A.M, Xu, L, Kozhemyakina, E, Lassar, A, Li, Y, Kaestner, K, Rosen, V

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Towards high degree of c-axis orientation in MgB2 bulks by Grigoroscuta, M.A., Aldica, G.V., Burdusel, M., Sandu, V., Kuncser, A., Pasuk, I., Ionescu, A.M., Suzuki, T.S., Vasylkiv, O., Badica, P.

“…The paper presents fabrication and characterization of spark plasma sintered textured (001) MgB2 with a record degree of orientation of about 40% and 16% by…”
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Fabrication and Characterization of Gate-All-Around Silicon Nanowires on Bulk Silicon by Pott, V., Moselund, K.E., Bouvet, D., De Michielis, L., Ionescu, A.M.

“…This paper reports on the top-down fabrication and electrical performance of silicon nanowire (SiNW) gate-all-around (GAA) n-type and p-type MOSFET devices…”
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Enhanced critical current density at high magnetic fields in MgB2 with Ga/In acetylacetonate processed by spark plasma sintering by Batalu, D., Aldica, G., Burdusel, M., Grigoroscuta, M., Pasuk, I., Kuncser, A., Ionescu, A.M., Badica, P.

“…Dense samples (94–96%) with starting composition (MgB2)0.99(X-acac)0.01 (X-acac denotes Ga or In acetylacetonate) were obtained by spark plasma sintering. The…”
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AC magnetic response of superconducting single crystals exhibiting a second peak on the DC magnetization curves by Miu, L., Ionescu, A.M., Miu, D., Petrisor, T., Park, A., Tamegai, T., Crisan, A.

“…The strong modulation of the AC magnetic response in the magnetic field-temperature region of the DC magnetization peak effect (PE) occurring just below the DC…”
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Influence of microstructure on optical properties of lithium disilicate ceramics by Pecho, O.E, Ionescu, A.M, Ghinea, R, Cardona, J.C, Perez, M.M, Della Bona, A

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Realization of multiple valued logic and memory by hybrid SETMOS architecture by Mahapatra, S., Ionescu, A.M.

“…A novel complimentary metal-oxide-semiconductor (CMOS) single-electron transistor (SET) hybrid architecture, named SETMOS, is proposed, which offers Coulomb…”
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Solid-gap wine-glass mode disks VB-FET resonators applied to biomass sensing by Maqueda López, M., Fernandéz-Bolaños Badía, M., Vitale, W., Ionescu, A.M.

“…The working principle of an electromechanical resonator for mass sensing applications is based on monitoring the characteristic resonance frequency downshift…”
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Identification of a novel target, FoxA2, in the onset and development of osteoarthritis by Ionescu, A.M, Xu, L, Kozhemyakina, E, Lassar, A, Li, Y, Kaestner, K, Whitman, M, Rosen, V

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Analytical Modeling of the Suspended-Gate FET and Design Insights for Low-Power Logic by Akarvardar, K., Eggimann, C., Tsamados, D., Singh Chauhan, Y., Wan, G.C., Ionescu, A.M., Howe, R.T., Wong, H.-S.P.

“…An analytical model for the suspended-gate field-effect transistor (SGFET), dedicated to the dc analysis of SGFET logic circuits, is developed. The model is…”
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In-Plane Silicon-On-Nothing Nanometer-Scale Resonant Suspended Gate MOSFET for In-IC Integration Perspectives by Durand, C., Casset, F., Renaux, P., Abele, N., Legrand, B., Renaud, D., Ollier, E., Ancey, P., Ionescu, A.M., Buchaillot, L.

“…A 14-MHz in-plane nanoelectromechanical resonator based on a resonant-suspended-gate (RSG) MOSFET principle and integrated in a front-end process is…”
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Self-heating characterization and extraction method for thermal resistance and capacitance in HV MOSFETs by Anghel, C., Gillon, R., Ionescu, A.M.

“…This letter reports on the self-heating effect (SHE) characterization of high-voltage (HV) DMOSFETs and the accurate extraction of the equivalent thermal…”
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Ultra-Sensitive Capacitive Detection Based on SGMOSFET Compatible With Front-End CMOS Process by Colinet, E., Durand, C., Duraffourg, L., Audebert, P., Dumas, G., Casset, F., Ollier, E., Ancey, P., Carpentier, J.-F., Buchaillot, L., Ionescu, A.M.

“…Capacitive measurement of very small displacement of nano-electro-mechanical systems (NEMS) presents some issues that are discussed in this article. It is…”
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Compact Modeling of Lateral Nonuniform Doping in High-Voltage MOSFETs by Chauhan, Y.S., Krummenacher, F., Gillon, R., Bakeroot, B., Declercq, M.J., Ionescu, A.M.

“…This paper reports on the detailed analysis and modeling of lateral nonuniform doping present in intrinsic MOS channel of high-voltage (HV) MOSFETs, e.g.,…”
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A quasi-analytical SET model for few electron circuit simulation by Mahapatra, S., Ionescu, A.M., Banerjee, K.

“…A novel quasi-analytical model for single electron transistors (SETS) is proposed and validated by comparison with Monte-Carlo (MC) simulations in terms of…”
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Hybrid SETMOS architecture with Coulomb blockade oscillations and high current drive by Ionescu, A.M., Mahapatra, S., Pott, V.

“…A hybrid single electron transistor/MOSFET (SETMOS) circuit cell architecture, working as a three-terminal stand-alone device for obtaining SET-like Coulomb…”
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