Search Results - "International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003"
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1
Scaling laws for the resistivity increase of sub-100 nm interconnects
Published in International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003 (2003)“…A physically based model is used to describe the resistivity increase of sub-100 nm copper interconnect structures. The main factors determining the increase…”
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Conference Proceeding
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2
Random dopant fluctuation modelling with the impedance field method
Published in International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003 (2003)“…We discuss an approach for the modelling of random dopant fluctuations based on the impedance field method that has been recently integrated into DESSIS. The…”
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Conference Proceeding -
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A novel technique for full-wave modeling of large-scale three-dimensional high-speed on/off-chip interconnect structures
Published in International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003 (2003)“…This paper presents a novel, rigorous, and fast method for full-wave modeling of high-speed interconnect structures. In this method, the original wave…”
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Conference Proceeding -
4
Quantum-dot cellular automata: an architecture for molecular computing
Published in International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003 (2003)“…The quantum-dot cellular automata (QCA) paradigm is a revolutionary approach to molecular-scale computing which represents binary information using the charge…”
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5
Optimization of L/sub Gate/ for ggNMOS ESD protection devices fabricated on bulk- and SOI- substrates, using process and device simulation
Published in International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003 (2003)“…The high-current characteristics of ggNMOS fabricated on bulk- as well as on SOI-substrates using a 0.6 /spl mu/m-CMOS technology have been simulated for…”
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Conference Proceeding -
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Computer aided design of sub-100 nm strained-Si/Si/sub 1-x/Ge/sub x/ NMOSFET through integrated process and device simulations
Published in International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003 (2003)“…Integrated process and device simulations were performed to design sub-100 nm strained-Si/Si/sub 75/Ge/sub 25/ devices. The process and device models were…”
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Conference Proceeding -
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Investigation of thermal breakdown mechanism in 0. 13 /spl mu/m technology ggNMOS under ESD conditions
Published in International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003 (2003)“…Transient device simulations reproducing conditions similar to Electro-Static Discharge (ESD) conditions have been performed for the entire safe operating area…”
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8
Investigation of the detailed structure of atomically sharp Ge/SiO/sub 2/ interfaces
Published in International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003 (2003)“…The atomic structure of the interface between Ge and SiO/sub 2/ - fabricated by oxidation of Ge-implanted Si - was studied using a combination of…”
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Conference Proceeding -
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Accurate transport modeling with 2D dopant profile effect in L/sub eff/ /spl sim/ 20 nm MOSFETs via inverse modeling
Published in International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003 (2003)“…To accurately consider 2D dopant profile effect, we have studied transport modeling by comparing nMOSFETs with indium or boron pocket implant. Our inverse…”
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10
Oxide breakdown model and its impact on SRAM cell functionality
Published in International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003 (2003)“…The influence of the oxide hard breakdown (HBD) in an SRAM cell on the performance of a circuit that includes the cell, together with the bit select circuit…”
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11
Experimental study on carrier transport mechanism in ultrathin-body SOI MOSFETs
Published in International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003 (2003)“…The electrical characteristics of ultrathin-body SOI CMOSFETs are intensively investigated. It is demonstrated that electron mobility increases as SOI…”
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12
Physical compact model for threshold voltage in short-channel double-gate devices
Published in International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003 (2003)“…Compact physics/process-based model for threshold voltage in double-gate devices is presented. Drain-induced barrier lowering and short-channel-induced barrier…”
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13
Study on cell characteristics of PRAM using the phase-change simulation
Published in International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003 (2003)“…In this paper, we present a new simulation methodology for analyzing cell characteristics of the chalcogenide based phase-change device, PRAM (Phase-change…”
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14
Electrostatic analysis of carbon nanotube arrays
Published in International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003 (2003)“…In order to improve the performance of carbon nanotube field effect transistors (CNFETs), a nanotube array should be used. For a densely packed array of…”
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Detailed heat generation simulations via the Monte Carlo method
Published in International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003 (2003)“…As current device technologies advance into the sub-continuum regime, they operate at length scales on the order of the electron and phonon mean free path. The…”
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Conference Proceeding -
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Ab-initio calculations to predict stress effects on defects and diffusion in silicon
Published in International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003 (2003)“…Stress effects play an increasing role in processing and performance of current nanoscale ULSI devices. In this paper, we show how first principle calculations…”
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17
Simulation of 2D quantum transport in ultrashort DG-MOSFETs : a fast algorithm using subbands
Published in International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003 (2003)“…A numerical method for the resolution of the two dimensional Schrodinger equation with an incoming plane wave boundary condition is proposed and applied to the…”
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18
A novel sub-20 nm depletion-mode double-gate (DMDG) FET
Published in International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003 (2003)“…We present a novel Depletion-Mode Double-Gate (DMDG) FET. As opposed to the conventional, un-doped body, double-gate MOSFETs, the DMDG device confines the…”
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Recent advances in sparse linear solver technology for semiconductor device simulation matrices
Published in International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003 (2003)“…This paper discusses recent advances in the development of robust direct and iterative sparse linear solvers for general unsymmetric linear systems of…”
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Conference Proceeding -
20
Theory and design of field-effect carbon nanotube transistors
Published in International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003 (2003)“…In this work we study the effects of the application of an electric field perpendicular to the axis of a Carbon nanotube. We find that such a field acts to…”
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Conference Proceeding