Search Results - "Imam, Syed Sarwar"

  • Showing 1 - 7 results of 7
Refine Results
  1. 1
    Sensitivity Study of Polysilicon Nanowire Based on Scattering and Quantum Mechanics Models

    Sensitivity Study of Polysilicon Nanowire Based on Scattering and Quantum Mechanics Models by Aanand, Sheu, Gene, Imam, Syed Sarwar, Lu, Shao Wei, Yang, Shao-Ming, Fan, Ming Jen

    Published in MATEC web of conferences (01-01-2018)
    “…In this paper, we report nanowire drain saturation current sensitivity property to measure femtomol level change in drain current due to different proteins…”
    Get full text
    Journal Article Conference Proceeding
    Save to List
    Saved in:
  2. 2
    Study of HCI Reliability for PLDMOS

    Study of HCI Reliability for PLDMOS by Deivasigamani, Ravi, Sheu, Gene, Aanand, Wei Lu, Shao, Sarwar Imam, Syed, Lai, Chiu-Chung, Yang, Shao-Ming

    Published in MATEC web of conferences (01-01-2018)
    “…In this paper, we demonstrate electrical degradation due to hot carrier injection (HCI) stress for PLDMOS device. The lower gate current and the IDsat…”
    Get full text
    Journal Article Conference Proceeding
    Save to List
    Saved in:
  3. 3
    Gate Engineering in SOI LDMOS for Device Reliability

    Gate Engineering in SOI LDMOS for Device Reliability by Aanand, Sheu, Gene, Imam, Syed Sarwar, Lu, Shao Wei, Aryadeep, Chirag, Yang, Shao Ming

    Published in MATEC web of conferences (01-01-2016)
    “…A linearly graded doping drift region with step gate structure, used for improvement of reduced surface field (RESURF) SOI LDMOS transistor performance has…”
    Get full text
    Journal Article Conference Proceeding
    Save to List
    Saved in:
  4. 4
    An experimental and analytical method to observe the polysilicon Nanowire mosfet threshold voltage

    An experimental and analytical method to observe the polysilicon Nanowire mosfet threshold voltage by Sheu, Gene, Shao-Ming Yang, Aanand, Imam, Syed Sarwar, Fan Ming Jen, Shao Wei Lu

    “…A new double integration-based method to extract model parameters is applied to experimental polysilicon nanowire MOSFETs. It was experimentally found that the…”
    Get full text
    Conference Proceeding
    Save to List
    Saved in:
  5. 5
    Effect of time and temperature on epitaxy growth

    Effect of time and temperature on epitaxy growth by Aanand, Sheu, Gene, Shao-Ming Yang, Ciou-Jhong Lai, Imam, Syed Sarwar

    “…The growth rate of epitaxy depends primarily on parameters such as source gas deposition temperature pressure and concentration. Most microelectronic circuits…”
    Get full text
    Conference Proceeding
    Save to List
    Saved in:
  6. 6
    DNA Biosensor Applications for Poly-Silicon Nanowire Field-Effect Transistors

    DNA Biosensor Applications for Poly-Silicon Nanowire Field-Effect Transistors by Shao-Wei Lu, Chia-Hsien Li, Aanand, Imam, Syed Sarwar, Shao-Ming Yang, Ming-Jen Fan, Gene Sheu

    “…In this paper, a normal nano-sensor technology using "top-down" poly-silicon nanowire field-effect transistors (FETs) in the conventional Complementary…”
    Get full text
    Conference Proceeding
    Save to List
    Saved in:
  7. 7
    ESD protection for GGNMOS technology by using TCAD macro-model

    ESD protection for GGNMOS technology by using TCAD macro-model by Shao-Ming Yang, Ching-Yuan Wu, Yun-Jung Lin, Wen-Chu Lo, Sheu, Gene, Imam, Syed Sarwar, Aanand

    “…Electrostatic Discharge (ESD) has become one of the most critical reliability issues in integrated circuits (ICs). The number of circuit design iteration due…”
    Get full text
    Conference Proceeding
    Save to List
    Saved in:

Search Tools: