Search Results - "Imade, Mamoru"

Vacancy-type defects in bulk GaN grown by the Na-flux method probed using positron annihilation by Uedono, Akira, Imanishi, Masayuki, Imade, Mamoru, Yoshimura, Masashi, Ishibashi, Shoji, Sumiya, Masatomo, Mori, Yusuke

“…•Vacancy-type defects in bulk GaN grown by the Na flux method were studied.•The defect species was identified as a Ga-vacancy coupled with…”
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Dramatic reduction of dislocations on a GaN point seed crystal by coalescence of bunched steps during Na-flux growth by Imanishi, Masayuki, Todoroki, Yuma, Murakami, Kosuke, Matsuo, Daisuke, Imabayashi, Hiroki, Takazawa, Hideo, Maruyama, Mihoko, Imade, Mamoru, Yoshimura, Masashi, Mori, Yusuke

“…In our study, we found that threading dislocation density (TDD) in GaN crystals naturally reduced from ~109cm−2 in a seed to less than ~103cm−2, just by using…”
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Growth of bulk GaN crystals by the Na-flux point seed technique by Imade, Mamoru, Maruyama, Mihoko, Yoshimura, Masashi, Mori, Yusuke

“…In this paper, progress in the Na-flux point seed technique (SPST) will be reviewed. Bulk GaN crystals with a diameter of 2.1 cm, a height of 1.2 cm, and large…”
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Growth of GaN layers using Ga2O vapor synthesized from Ga2O3 and carbon by Kitamoto, Akira, Yamaguchi, Yohei, Tsuno, Shintaro, Ishibashi, Keiju, Gunji, Yoshikazu, Imanishi, Masayuki, Imade, Mamoru, Yoshimura, Masashi, Hata, Masahiko, Isemura, Masashi, Mori, Yusuke

“…•We grew GaN layers using Ga2O vapor synthesized from Ga2O3 and carbon powders.•We precisely controlled the growth rate by tuning the rate of Ga2O vapor…”
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Effect of H2 carrier gas on the physical properties of a GaN layer grown using Ga2O vapor and NH3 by Bu, Yuan, Imade, Mamoru, Kitamoto, Akira, Yoshimura, Masashi, Isemura, Masashi, Mori, Yusuke

“…We investigated the effect of H2 ratio in carrier gas on oxygen concentration, crystallinity and threading dislocation density (TDD) in GaN layers synthesized…”
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Effect of flux composition ratio on the coalescence growth of GaN crystals by the Na-flux method by Honjo, Masatomo, Imanishi, Masayuki, Imabayashi, Hiroki, Nakamura, Kosuke, Murakami, Kosuke, Matsuo, Daisuke, Maruyama, Mihoko, Imade, Mamoru, Yoshimura, Masashi, Mori, Yusuke

“…Previously, we demonstrated that the Na-flux coalescence growth technique had high potential for the fabrication of large-diameter, high-quality GaN crystals…”
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Increase in the growth rate of GaN crystals by using gaseous methane in the Na flux method by Murakami, Kosuke, Ogawa, Shogo, Imanishi, Masayuki, Imade, Mamoru, Maruyama, Mihoko, Yoshimura, Masashi, Mori, Yusuke

“…In the growth of GaN using the Na flux method, the addition of graphite to the flux enables us to suppress the formation of GaN polycrystals generated around…”
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Effects of Al additives on growth of GaN polycrystals by the Na flux method by Imabayashi, Hiroki, Murakami, Kosuke, Matsuo, Daisuke, Honjo, Masatomo, Imanishi, Masayuki, Maruyama, Mihoko, Imade, Mamoru, Yoshimura, Masashi, Mori, Yusuke

“…In this study, we investigated the growth of GaN polycrystals using the Al-added Na flux method. We studied the effects of Al on accelerating the nucleation…”
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Habit control during growth on GaN point seed crystals by Na-flux method by Honjo, Masatomo, Imanishi, Masayuki, Imabayashi, Hiroki, Nakamura, Kosuke, Murakami, Kosuke, Matsuo, Daisuke, Maruyama, Mihoko, Imade, Mamoru, Yoshimura, Masashi, Mori, Yusuke

“…The formation of the pyramidal habit is one of the requirements for the dramatic reduction of dislocations during growth on a tiny GaN seed called a "point…”
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Vapor-phase epitaxial growth of GaN films using Ga2O vapor and NH3 by Imade, Mamoru, Bu, Yuan, Sumi, Tomoaki, Kitamoto, Akira, Yoshimura, Masashi, Sasaki, Takatomo, Imsemura, Masashi, Mori, Yusuke

“…High-temperature epitaxial growth (>1200°C) of GaN using Ga2O vapor and NH3 was performed to increase the crystal growth rate and improve crystal qualities…”
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Improvement of crystallinity of GaN layers grown using Ga2O vapor synthesized from liquid Ga and H2O vapor by Yamaguchi, Yohei, Taniyama, Yuuki, Takatsu, Hiroaki, Kitamoto, Akira, Imade, Mamoru, Yoshimura, Masashi, Isemura, Masashi, Mori, Yusuke

“…Growth methods using Ga2O vapor allow long-term growth of bulk GaN crystals. Ga2O vapor is generated by the reduction of Ga2O3 powder with H2 gas (Ga2O3-H2…”
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Vapor-phase epitaxy of high-crystallinity GaN films using Ga2O vapor and NH3 by IMADE, Mamoru, KISHIMOTO, Hiroki, KAWAMURA, Fumio, YOSHIMURA, Masashi, KITAOKA, Yasuo, SASAKI, Takatomo, MORI, Yusuke

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Homoepitaxial growth of GaN crystals by Na-flux dipping method by Sato, Taro, Nakamura, Koshi, Imanishi, Masayuki, Murakami, Kosuke, Imabayashi, Hiroki, Takazawa, Hideo, Todoroki, Yuma, Matsuo, Daisuke, Imade, Mamoru, Maruyama, Mihoko, Yoshimura, Masashi, Mori, Yusuke

“…The realization of low-dislocation-density bulk GaN crystals is necessary for use in the fabrication of future high-power devices with low power consumption…”
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Control of Growth Facets and Dislocation Propagation Behavior in the Na-Flux Growth of GaN by Imade, Mamoru, Hirabayashi, Yasuhiro, Miyoshi, Naoya, Yoshimura, Masashi, Kitaoka, Yasuo, Sasaki, Takatomo, Mori, Yusuke

“…We investigated changes in the growth mode and dislocation propagation behavior of Na-flux-grown GaN on GaN (0001) templates with changing flux composition…”
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Control of GaN crystal habit by solution stirring in the Na-flux method by Murakami, Kosuke, Imade, Mamoru, Imanishi, Masayuki, Honjo, Masatomo, Imabayashi, Hiroki, Matsuo, Daisuke, Nakamura, Kosuke, Maruyama, Mihoko, Yoshimura, Masashi, Mori, Yusuke

“…In our previous study, we succeeded in fabricating low-curvature GaN wafers with low dislocation density by the Na-flux coalescence growth technique. However,…”
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Dependence of polarity inversion on V/III ratio in −c-GaN growth by oxide vapor phase epitaxy by Taniyama, Yuki, Yamaguchi, Yohei, Takatsu, Hiroaki, Sumi, Tomoaki, Kitamoto, Akira, Imade, Mamoru, Yoshimura, Masashi, Isemura, Masashi, Mori, Yusuke

“…One of the issues in bulk c-GaN growth is the decrease in the diameter of crystals with an increase in thickness owing to the appearance of inclined and…”
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Growth of GaN layers using Ga2O vapor obtained from Ga and H2O vapor by Sumi, Tomoaki, Taniyama, Yuuki, Takatsu, Hiroaki, Juta, Masami, Kitamoto, Akira, Imade, Mamoru, Yoshimura, Masashi, Isemura, Masashi, Mori, Yusuke

“…In this study, we performed growth of GaN layers using Ga2O vapor synthesized from Ga and H2O vapor. In this process, we employed H2O vapor instead of HCl gas…”
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Effects of Solution Stirring on the Growth of Bulk GaN Single Crystals by Na Flux Method by Murakami, Kousuke, Matsuo, Daisuke, Imabayashi, Hiroki, Takazawa, Hideo, Todoroki, Yuma, Kitamoto, Akira, Maruyama, Mihoko, Imade, Mamoru, Yoshimura, Masashi, Mori, Yusuke

“…Recently, we succeeded in fabricating centimeter-sized bulk gallium nitride (GaN) crystals with large dislocation-free areas on a GaN point seed. However,…”
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Study of the metastable region in the growth of GaN using the Na flux method by Kawamura, Fumio, Morishita, Masanori, Miyoshi, Naoya, Imade, Mamoru, Yoshimura, Masashi, Kitaoka, Yasuo, Mori, Yusuke, Sasaki, Takatomo

“…It was revealed that the metastable region, in which liquid phase epitaxy (LPE) of GaN single crystals proceeds without the generation of polycrystals, expands…”
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High Temperature Growth of Non-polar $a$-Plane GaN Film Grown Using Gallium-Oxide as Ga Source by Sumi, Tomoaki, Bu, Yuan, Kitamoto, Akira, Imade, Mamoru, Yoshimura, Masashi, Isemura, Masashi, Mori, Yusuke

“…In this study, we reported a decrease of oxygen concentration and an increase in the growth rate of $a$-plane gallium nitride ($a$-GaN) film grown using Ga 2 O…”
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