Search Results - "Illiberi, A"

Spatial Atomic Layer Deposition of Zinc Oxide Thin Films by Illiberi, A, Roozeboom, F, Poodt, P

“…Zinc oxide thin films have been deposited at high growth rates (up to ∼1 nm/s) by spatial atomic layer deposition technique at atmospheric pressure. Water has…”
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Spatial atmospheric atomic layer deposition of InxGayZnzO for thin film transistors by Illiberi, A, Cobb, B, Sharma, A, Grehl, T, Brongersma, H, Roozeboom, F, Gelinck, G, Poodt, P

“…We have investigated the nucleation and growth of InGaZnO thin films by spatial atmospheric atomic layer deposition. Diethyl zinc (DEZ), trimethyl indium…”
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The kinetics of low-temperature spatial atomic layer deposition of aluminum oxide by Poodt, P., Illiberi, A., Roozeboom, F.

“…Spatial atomic layer deposition can be used as a high-throughput manufacturing technique in functional thin film deposition for applications such as flexible…”
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APCVD of ZnO:Al, insight and control by modeling by van Deelen, J., Illiberi, A., Kniknie, B., Steijvers, H., Lankhorst, A., Simons, P.

“…Atmospheric pressure chemical vapor deposition (APCVD) of ZnO from diethyl zinc (DEZn) and t-butanol was performed using an industrial reactor design…”
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Effect of ion bombardment on the a-Si:H based surface passivation of c-Si surfaces by Illiberi, A., Kudlacek, P., Smets, A. H. M., Creatore, M., van de Sanden, M. C. M.

“…We have found that controlled Ar ion bombardment enhances the degradation of a-Si:H based surface passivation of c-Si surfaces. The decrease in the level of…”
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Thermal annealing using ultra-short laser pulses to improve the electrical properties of Al:ZnO thin films by Scorticati, D., Illiberi, A., Bor, T.C., Eijt, S.W.H., Schut, H., Römer, G.R.B.E., Klein Gunnewiek, M., Lenferink, A.T.M., Kniknie, B.J., Mary Joy, R., Dorenkamper, M.S., de Lange, D.F., Otto, C., Borsa, D., Soppe, W.J., Huis in ’t Veld, A.J.

“…Industrial-grade Al:ZnO thin films, were annealed by UV picosecond laser irradiation in argon atmosphere. A remarkable increase of both the carrier density and…”
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Novel approach to thin film polycrystalline silicon on glass by Illiberi, A., Sharma, K., Creatore, M., van de Sanden, M.C.M.

“…Thin (1 μm) a-Si:H films have been deposited on glass at high-deposition rate (8 nm/s) and high substrate temperature (400 °C) by the expanding thermal plasma…”
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Annealing of SnO₂ thin films by ultra-short laser pulses by Scorticati, D, Illiberi, A, Bor, T, Eijt, S W H, Schut, H, Römer, G R B E, de Lange, D F, in 't Veld, A J Huis

“…Post-deposition annealing by ultra-short laser pulses can modify the optical properties of SnO₂ thin films by means of thermal processing. Industrial grade…”
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Atmospheric pressure chemical vapor deposition of ZnO: Process modeling and experiments by van Deelen, J., Illiberi, A., Kniknie, B., Beckers, E.H.A., Simons, P.J.P.M., Lankhorst, A.

“…The deposition of zinc oxide has been performed by atmospheric pressure chemical vapor deposition and trends in growth rates are compared with the literature…”
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Industrial high-rate (∼14 nm/s) deposition of low resistive and transparent ZnOx:Al films on glass by ILLIBERI, A, KNIKNIE, B, VAN DEELEN, J, STEIJVERS, H. L. A. H, HABETS, D, SIMONS, PJ. P. M, JANSSEN, A. C, BECKERS, E. H. A

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Spatial Atmospheric Atomic Layer Deposition of In x Ga y Zn z O for Thin Film Transistors by Illiberi, A, Cobb, B, Sharma, A, Grehl, T, Brongersma, H, Roozeboom, F, Gelinck, G, Poodt, P

“…We have investigated the nucleation and growth of InGaZnO thin films by spatial atmospheric atomic layer deposition. Diethyl zinc (DEZ), trimethyl indium…”
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Growth of ZnOx:Al by high-throughput CVD at atmospheric pressure by Illiberi, A., Simons, P.J.P.M., Kniknie, B., van Deelen, J., Theelen, M., Zeman, M., Tijssen, M., Zijlmans, W., Steijvers, H.L.A.H., Habets, D., Janssen, A.C., Beckers, E.H.A.

“…Aluminum doped zinc oxide films (ZnOx:Al) have been deposited on a moving glass substrate by a metalorganic CVD process at atmospheric pressure in an in-line…”
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Role of a-Si:H bulk in surface passivation of c-Si wafers by Illiberi, A., Sharma, K., Creatore, M., van de Sanden, M. C. M.

“…The low thermal stability of hydrogenated amorphous silicon (a‐Si:H) thin films limits their widespread use for surface passivation of c‐Si wafers on the rear…”
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Growth of ZnO :Al by high-throughput CVD at atmospheric pressure by Illiberi, A., Simons, P.J.P.M., Kniknie, B., van Deelen, J., Theelen, M., Zeman, M., Tijssen, M., Zijlmans, W., Steijvers, H.L.A.H., Habets, D., Janssen, A.C., Beckers, E.H.A.

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Hydrogenated amorphous silicon based surface passivation of c-Si at high deposition temperature and rate by Illiberi, A., Creatore, M., Kessels, W. M. M., van de Sanden, M. C. M.

“…Low substrate temperature during deposition of a‐Si:H is considered a necessary condition to reach excellent surface passivation of c‐Si wafers, such as a…”
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Experimental investigation of coherent structures in a low-energy electron beam by Bettega, G., Cavaliere, F., Illiberi, A., Pozzoli, R., Romé, M., Cavenago, M., Tsidulko, Yu

“…A sharp transition to a space-charge dominated regime is induced in a low-energy electron beam produced in a Malmberg–Penning trap by increasing the emission…”
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High performance La-doped HZO based ferroelectric capacitors by interfacial engineering by Popovici, M.I., Bizindavyi, J., Favia, P., Clima, S., Alam, Md. Nur K., Ramachandran, R.K., Walke, A.M., Celano, U., Leonhardt, A., Mukherjee, S., Richard, O., Illiberi, A., Givens, M., Delhougne, R., Van Houdt, J., Kar, G. Sankar

“…We show how interfacial oxide engineering in La-doped hafnium zirconate (HZO) ferroelectric (FE) capacitor stacks can be used to significantly improve the…”
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Atmospheric spatial atomic layer deposition of Zn(O,S) buffer layer for Cu(In,Ga)Se2 solar cells by Frijters, C.H., Poodt, P., Illiberi, A.

“…Zinc oxysulfide has been grown by spatial atomic layer deposition (S-ALD) and successfully applied as buffer layer in Cu(In, Ga)Se2 (CIGS) solar cells. S-ALD…”
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Expanding Thermal Plasma deposited a-Si:H thin films for surface passivation of c-Si wafers by Illiberi, A, Sharma, K, Creatore, M, Kessels, W M M, van de Sanden, M C M

“…Low thermal stability of hydrogenated amorphous silicon (a-Si:H) thin films limits their widespread use for surface passivation of c-Si wafers on the rear side…”
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Spatial Atmospheric Atomic Layer Deposition of Al x Zn 1– x O by Illiberi, A., Scherpenborg, R., Wu, Y., Roozeboom, F., Poodt, P.

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