Search Results - "Ilkiv, Igor V"

Purcell Effect and Beaming of Emission in Hybrid AlGaAs Nanowires with GaAs Quantum Dots by Reznik, Rodion R., Cirlin, George E., Kotlyar, Konstantin P., Ilkiv, Igor V., Akopian, Nika, Leandro, Lorenzo, Nikolaev, Valentin V., Belonovski, Alexey V., Kaliteevski, Mikhail A.

“…Control of directionality of emissions is an important task for the realization of novel nanophotonic devices based on nanowires. Most of the existing…”
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Control of Conductivity of InxGa1-xAs Nanowires by Applied Tension and Surface States by Alekseev, Prokhor A, Sharov, Vladislav A, Dunaevskiy, Mikhail S, Kirilenko, Demid A, Ilkiv, Igor V, Reznik, Rodion R, Cirlin, George E, Berkovits, Vladimir L

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Molecular‐Beam Epitaxy Growth and Properties of AlGaAs Nanowires with InGaAs Nanostructures by Reznik, Rodion R., Ilkiv, Igor V., Kotlyar, Konstantin P., Gridchin, Vladislav O., Bondarenko, Dariya N., Lendyashova, Vera V., Ubyivovk, Evgenii V., Dragunova, Anna S., Kryzhanovskaya, Natalia V., Cirlin, George E.

“…Combinations of III–V nanowires (NWs) with quantum dots (QDs) are promising building blocks for quantum light sources. Herein, for the first time, the results…”
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Control of Conductivity of In x Ga 1- x As Nanowires by Applied Tension and Surface States by Alekseev, Prokhor A, Sharov, Vladislav A, Dunaevskiy, Mikhail S, Kirilenko, Demid A, Ilkiv, Igor V, Reznik, Rodion R, Cirlin, George E, Berkovits, Vladimir L

“…The electronic properties of semiconductor AIIIBV nanowires (NWs) due to their high surface/volume ratio can be effectively controlled by NW strain and surface…”
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Low‐Temperature Growth of Au‐Catalyzed InAs Nanowires: Experiment and Theory by Dubrovskii, Vladimir G., Reznik, Rodion R., Ilkiv, Igor V., Kotlyar, Konstantin P., Soshnikov, Ilya P., Ubyivovk, Evgenii. V., Mikushev, Sergey V., Cirlin, George E.

“…Experimental data on the rapid (≈4.4 nm s−1) axial growth rate of narrow (≈9 nm in radius) InAs nanowires (NWs) obtained by Au‐catalyzed molecular beam epitaxy…”
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Formation of Hexagonal Ge Stripes on the Side Facets of AlGaAs Nanowires: Implications for Near-Infrared Detectors by Ilkiv, Igor V, Kotlyar, Konstantin P, Kirilenko, Demid A, Osipov, Andrey V, Soshnikov, Ilya P, Mikushev, Sergey V, Dubrovskii, Vladimir G, Cirlin, George E

“…Obtaining hexagonal Ge is a great challenge and has previously been achieved by transferring the wurtzite phase of GaAs nanowires, where Ge forms a conformal…”
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Influence of capping layer growth mode on the photoluminescence of InAs quantum dots in silicon by Lendyashova, Vera V, Ilkiv, Igor V, Talalaev, Vadim G, Shugabaev, Talgat, Reznik, Rodion R, Cirlin, George E

“…The influence of growth regimes of the silicon capping layer on the optical properties of heterostructures with submonolayer InAs quantum dots embedded in a…”
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Control of Conductivity of In x Ga1–x As Nanowires by Applied Tension and Surface States by Alekseev, Prokhor A, Sharov, Vladislav A, Dunaevskiy, Mikhail S, Kirilenko, Demid A, Ilkiv, Igor V, Reznik, Rodion R, Cirlin, George E, Berkovits, Vladimir L

“…The electronic properties of semiconductor AIIIBV nanowires (NWs) due to their high surface/volume ratio can be effectively controlled by NW strain and surface…”
Get full text