Search Results - "Ilashchuk, M.I"

Structural, optical and electrical properties of Cu2ZnSnS4 films prepared from a non-toxic DMSO-based sol-gel and synthesized in low vacuum by Orletskyi, I.G., Solovan, M.M., Brus, V.V., Pinna, F., Cicero, G., Maryanchuk, P.D., Maistruk, E.V., Ilashchuk, M.I., Boichuk, T.I., Tresso, E.

“…This paper reports a complex analysis of structural, optical and electrical properties of Cu2ZnSnS4 (CZTS) films, prepared by spin-coating of a sol-gel based…”
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Electrical Properties of the n-NiS 2 /n-CdTe Isotype Heterojunction Fabricated by Spray Pyrolysis by Orletskyi, I.G., Ilashchuk, M.I., Maistruk, E.V., Koziarskyi, I.P., Koziarskyi, D.P.

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The influence of manufacturing modes on the electrical and energy parameters of graphene/p-CdTe Schottky diodes by Koziarskyi, I.P., Ilashchuk, M.I., Orletskyi, I.G., Koziarskyi, D.P., Myroniuk, L.A., Myroniuk, D.V., Ievtushenko, A.I., Maistruk, E.V.

“…The paper investigated the electrical properties of graphene/p-CdTe structures, which were distinguished by different durations of graphene films application…”
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Graphitic carbon/n-CdTe Schottky-type heterojunction solar cells prepared by electron-beam evaporation by Brus, V.V., Maryanchuk, P.D., Ilashchuk, M.I., Rappich, J., Babichuk, I.S., Kovalyuk, Z.D.

“…•The effect of interface states on current transport at forward bias was observed.•The graphitic carbon/n-CdTe Schottky-type heterojunctions are linearly…”
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Electrical properties of thin-film semiconductor heterojunctions n-Ti[O.sub.2]/p-CuIn[S.sub.2] by Brus, V.V, Orletsky, I.G, Ilashchuk, M.I, Maryanchuk, P.D

“…Anisotype thin-film heterojunctions n-Ti[O.sub.2]/p-CuIn[S.sub.2] are fabricated by spray-pyrolysis and dc reactive magnetron sputtering. The electrical and…”
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Electrical properties of MOS diodes In/Ti[O.sub.2]/p-CdTe by Brus, V.V, Ilashchuk, M.I, Orletsky, I.G, Maryanchuk, P.D, Ulyanytskiy, K.S

“…In/Ti[O.sub.2]/p-CdTe MOS diodes, which have a rectification coefficient of K = 6x[10.sup.3] at an external bias of 2 V, are fabricated for the first time by…”
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Fabrication and Properties of the Photosensitive Anisotype n-Cd x Zn 1-x O/p-CdTe Heterojunctions by Khomyak, V.V., Brus, V.V., Ilashchuk, M.I., Orletsky, I.G., Shtepliuk, I.I., Lashkarev, G.V.

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Electrical and Photoelectric Properties of the TiN/p-InSe Heterojunction by Orletsky, I. G., Ilashchuk, M. I., Brus, V. V., Marianchuk, P. D., Solovan, M. M., Kovalyuk, Z. D.

“…The conditions for fabricating photosensitive TiN/ p -InSe heterojunctions by the reactive-magnetron sputtering of thin titanium-nitride films onto freshly…”
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Electrical properties of anisotype heterojunctions n-CdZnO/p-CdTe by Brus, V. V., Ilashchuk, M. I., Khomyak, V. V., Kovalyuk, Z. D., Maryanchuk, P. D., Ulyanytsky, K. S.

“…Anisotype surface-barrier n -Cd 0.5 Zn 0.5 O/ p -CdTe heterojunctions are fabricated by the high-frequency sputtering of a Cd 0.5 Zn 0.5 O alloy film onto a…”
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Mechanisms of charge transport in anisotype n-Ti[O.sub.2]/p-CdTe heterojunctions by Brus, V.V, Ilashchuk, M.I, Kovalyuk, Z.D, Maryanchuk, P.D, Ulyanytsky, K.S, Gritsyuk, B.N

“…Surface-barrier anisotype n-Ti[O.sub.2]/p-CdTe heterojunctions are fabricated by depositing thin titanium-dioxide films on a freshly cleaved surface of…”
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The effect of chlorine doping concentration on the quality of CdTe single crystals grown by the modified physical vapor transport method by Popovych, V.D., Virt, I.S., Sizov, F.F., Tetyorkin, V.V., Tsybrii (Ivasiv), Z.F., Darchuk, L.O., Parfenjuk, O.A., Ilashchuk, M.I.

“…Undoped and Cl-doped CdTe crystals were grown by the modified PVT technique in a vertical configuration. Their structural quality as well as electrical and…”
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Thermostability of physical properties of cadmium telluride crystals by Savitsky, A.V., Ilashchuk, M.I., Parfenyuk, O.A., Ulyanytsky, K.S., Burachek, V.R., Ciach, R., Swiatek, Z., Kuznicki, Z.

“…Time-dependent changes of electrical properties are investigated in the range of relative low heating temperatures (T identical with 320 to 450 K) for undoped…”
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Photoelectric properties of CdTe:Sn semiinsulating crystals by Savitsky, A.V, Parfenyuk, O.A, Ilashchuk, M.I, Ulyanytsky, K.S, Savchuk, A.I, Gorley, P.M

“…Experimental investigations of photoelectric properties of semiinsulating CdTe:Sn crystals are carried out. The samples had high sensibility. In the…”
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Improvement of quality of Cd 1− x Mn xTe crystals by special annealing by Savitsky, A.V., Ilashchuk, M.I., Parfenyuk, O.A., Ivanchuk, R.D., Ivanchuk, D.D., Ulyanytsky, K.S., Burachek, V.R.

“…Electrical, magnetic and optical properties of Cd 1−x Mn x Te (0.1⩽x⩽0.45) single crystals grown by the Bridgman technique and annealed under various…”
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Improvement of quality of Cd1−x MnxTe crystals by special annealing by Savitsky, A.V., Ilashchuk, M.I., Parfenyuk, O.A., Ivanchuk, R.D., Ivanchuk, D.D., Ulyanytsky, K.S., Burachek, V.R.

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