Search Results - "Ikhlassi, Amal"

Coulomb drag in topological wires separated by an air gap by Du, Lingjie, Zheng, Jianmin, Chou, Yang-Zhi, Zhang, Jie, Wu, Xingjun, Sullivan, Gerard, Ikhlassi, Amal, Du, Rui-Rui

“…Strong electron–electron interactions between adjacent nanoscale wires can lead to one-dimensional Coulomb drag, where current in one wire induces a voltage in…”
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LWIR Strained-Layer Superlattice Materials and Devices at Teledyne Imaging Sensors by Hood, Andrew D., Evans, Allan J., Ikhlassi, Amal, Lee, Donald L., Tennant, William E.

“…Strained-layer superlattices (SLS) based on type II InAs/Ga(In)Sb materials are a rapidly maturing technology and are theoretically predicted to exceed the…”
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Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators by Du, Lingjie, Li, Tingxin, Lou, Wenkai, Wu, Xingjun, Liu, Xiaoxue, Han, Zhongdong, Zhang, Chi, Sullivan, Gerard, Ikhlassi, Amal, Chang, Kai, Du, Rui-Rui

“…We report on a class of quantum spin Hall insulators (QSHIs) in strained-layer InAs/GaInSb quantum wells, in which the bulk gaps are enhanced up to fivefold as…”
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512 \,\times\,512 Individually Addressable MWIR LED Arrays Based on Type-II InAs/GaSb Superlattices by Norton, Dennis T., Olesberg, Jonathon T., McGee, Rodney T., Waite, Nicholas A., Dickason, Jonathan, Goossen, K. W., Lawler, John, Sullivan, Gerry, Ikhlassi, Amal, Kiamilev, Fouad, Koerperick, Edwin J., Murray, Lee M., Prineas, John P., Boggess, Thomas F.

“…Single element 33×33 μm 2 InAs/GaSb superlattice light-emitting diodes (SLEDs) operating at 77 K with peak emission at approximately 4.6 μm are demonstrated. A…”
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Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators by Du, Lingjie, Li, Tingxin, Lou, Wenkai, Wu, Xingjun, Liu, Xiaoxue, Han, Zhongdong, Zhang, Chi, Sullivan, Gerard, Ikhlassi, Amal, Chang, Kai, Du, Rui-Rui

“…Phys. Rev. Lett. 119, 056803 (2017) We report on a class of quantum spin Hall insulators (QSHIs) in strained-layer InAs/GaInSb quantum wells, in which the bulk…”
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Low-voltage, high-performance InAs/AlSb HEMTs with power gain above 100 GHz at 100 mV drain bias by Bergman, J., Nagy, G., Sullivan, G., Ikhlassi, A., Brar, B.

“…Ultra-low power circuits require transistors with usable RF gain at low bias voltages and currents. In the present paper, we report 100 nm gate-length…”
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