Search Results - "Ikehashi, T."

Design methodology of a robust ESD protection circuit for STI process 256 Mb NAND flash memory by Ikehashi, T., Imamiya, K., Sakui, K.

“…With the use of a device simulator, we show that an ESD protection circuit whose junction filled with contacts is suited to a scaled STI process having thin…”
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Design methodology of a robust ESD protection circuit for STI process 256 Mb NAND flash memory by Ikehashi, T., Imamiya, K., Sakui, K.

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A high power-handling RF MEMS tunable capacitor using quadruple series capacitor structure by Yamazaki, H., Ikehashi, T., Saito, T., Ogawa, E., Masunaga, T., Ohguro, T., Sugizaki, Y., Shibata, H.

“…This paper presents an RF MEMS tunable capacitor that achieves excellent power-handling property with relatively low actuation voltage. The tunable capacitor…”
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A memory using one-transistor gain cell on SOI(FBC) with performance suitable for embedded DRAM's by Ohsawa, T., Higashi, T., Fujita, K., Ikehashi, T., Kajiyama, T., Fukuzumi, Y., Shino, T., Yamada, H., Nakajima, H., Minami, Y., Yamada, T., Inoh, K., Hamamoto, T.

“…A 288 Kbit memory chip featuring a one-transistor gain cell on SOI of the size 0.21 /spl mu/m/sup 2/(7F/sup 2/ with F=0.175 /spl mu/m) which we named the…”
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A Robust RF MEMS Variable Capacitor with Piezoelectric and Electrostatic Actuation by Ikehashi, T., Ohguro, T., Ogawa, E., Yamazaki, H., Kojima, K., Matsuo, M., Ishimaru, K., Ishiuchi, H.

“…An RF MEMS variable capacitor using hybrid actuation of piezoelectric and electrostatic forces is presented. A surface micromachining process is used to…”
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A 125-mm(2) 1-Gb NAND flash memory with 10-MByte/s program speed by Imamiya, K, Nakamura, H, Himeno, T, Yarnamura, T, Ikehashi, T, Takeuchi, K, Kanda, K, Hosono, K, Futatsuyama, T, Kawai, K, Shirota, R, Arai, N, Arai, F, Hatakeyama, K, Hazama, H, Saito, M, Meguro, H, Conley, K, Quader, K

“…A single 3-V only, 1-Gb NAND flash memory has been successfully developed. The chip has been fabricated using 0.13-mum CMOS STI technology. The effective cell…”
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An ESD preotection device using normally-on MEMS switch by Ikehashi, T., Saito, T.

“…We investigate normally-off and normally-on MEMS switches as ESD protection devices. The normally-on type switch behaves as an ESD protection only when the…”
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A 125-mm/sup 2/ 1-Gb NAND flash memory with 10-MByte/s program speed by Imamiya, K., Nakamura, H., Himeno, T., Yarnamura, T., Ikehashi, T., Takeuchi, K., Kanda, K., Hosono, K., Futatsuyama, T., Kawai, K., Shirota, R., Arai, N., Arai, F., Hatakeyama, K., Hazama, H., Saito, M., Meguro, H., Conley, K., Quader, K., Chen, J.J.

“…A single 3-V only, 1-Gb NAND flash memory has been successfully developed. The chip has been fabricated using 0.13-/spl mu/m CMOS STI technology. The effective…”
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A 125-mm2 1-Gb NAND flash memory with 10-MByte/s program speed by Imamiya, K, Nakamura, H, Himeno, T, Yarnamura, T, Ikehashi, T, Takeuchi, K, Kanda, K, Hosono, K, Futatsuyama, T, Kawai, K, Shirota, R, Arai, N, Arai, F, Hatakeyama, K, Hazama, H, Saito, M, Meguro, H, Conley, K, Quader, K, Chen, J.J

“…[...] the write cache accelerates the serial read operation and a very fast 20-MByte/s read throughput is realized…”
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A 125-mm super(2) 1-Gb NAND flash memory with 10-MByte/s program speed by Imamiya, K, Nakamura, H, Himeno, T, Yarnamura, T, Ikehashi, T, Takeuchi, K, Kanda, K, Hosono, K, Futatsuyama, T, Kawai, K, Shirota, R, Arai, N, Arai, F, Hatakeyama, K, Hazama, H, Saito, M, Meguro, H, Conley, K, Quader, K, Chen, J J

“…A single 3-V only, 1-Gb NAND flash memory has been successfully developed. The chip has been fabricated using 0.13- mu m CMOS STI technology. The effective…”
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A 130-mm(2), 256-Mbit NAND flash with shallow trenchisolation technology by Imamiya, K, Sugiura, Y, Nakamura, H, Himeno, T, Takeuchi, K, Ikehashi, T, Kanda, K, Hosono, K, Shirota, R, Aritome, S, Shimizu, K, Hatakeyama, K, Sakui, K

“…A 256-Mbit flash memory has been developed using a NAND cell structure with a shallow trench isolation (STI) process. A tight bit-line pitch of 0.55 mum is…”
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A 130-mm/sup 2/, 256-Mbit NAND flash with shallow trench isolation technology by Imamiya, K., Sugiura, Y., Nakamura, H., Himeno, T., Takeuchi, K., Ikehashi, T., Kanda, K., Hosono, K., Shirota, R., Aritome, S., Shimizu, K., Hatakeyama, K., Sakui, K.

“…A 256-Mbit flash memory has been developed using a NAND cell structure with a shallow trench isolation (STI) process. A tight bit-line pitch of 0.55 /spl mu/m…”
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The low-energy theorem of pion photoproduction using the Skyrme model by Ikehashi, Tamio, Ohta, Koichi

“…We reassess the validity of the current-algebra based low-energy theorem of pion photoproduction on the nucleon using the Skyrme model. We find that one of the…”
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130-mm super(2), 256-Mbit NAND flash with shallow trench isolation technology by Imamiya, Kenichi, Sugiura, Yoshihisa, Nakamura, Hiroshi, Himeno, Toshihiko, Takeuchi, Ken, Ikehashi, Tamio, Kanda, Kazushige, Hosono, Koji, Shirota, Riichiro, Aritome, Seiichi, Shimizu, Kazuhiro, Hatakeyama, Kazuo, Sakui, Koji

“…A 256-Mbit flash memory has been developed using a NAND cell structure with a shallow trench isolation (STI) process. A tight bit-line pitch of 0.55 mu m is…”
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A CMOS embedded RF-MEMS tunable capacitor for multi-band/multi-mode smartphones by Kurui, Y., Yamazaki, H., Shimooka, Y., Saito, T., Ogawa, E., Ogawa, T., Ikehashi, T., Sugizaki, Y., Shibata, H.

“…This paper reports on 1-chip RF-MEMS tunable capacitor that equips CMOS driver circuit in the underlying layer. A Wafer Level Chip Scale Package (WLCSP)…”
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A 3V Operation RF MEMS Variable Capacitor using Piezoelectric and Electrostatic Actuation with Lithographical Bending Control by Ikehashi, T., Ogawa, E., Yamazaki, H., Ohguro, T.

“…A 3 V operation RF MEMS variable capacitor using hybrid actuation of piezoelectric and electrostatic forces is presented. Bending of the piezoelectric actuator…”
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A long-term reliability analysis of a creep-immune RF-MEMS tunable capacitor by Ogawa, E., Masunishi, K., Ikehashi, T., Saito, T., Yamazaki, H., Tomizawa, Y., Sugizaki, Y.

“…Actuators used in RF-MEMS tunable capacitors have an issue of creep-induced deformation. The creep is caused by a ductile-metal beam which is indispensable to…”
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Low profile double resonance frequency tunable antenna using RF MEMS variable capacitor for digital terrestrial broadcasting reception by Tsutsumi, Y., Nishio, M., Obayashi, S., Shoki, H., Ikehashi, T., Yamazaki, H., Ogawa, E., Saito, T., Ohguro, T., Morooka, T.

“…It is difficult to realize the built-in antenna for wideband systems, because a frequency bandwidth of the low profile antenna is narrow. A frequency tunable…”
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A 130 mm/sup 2/ 256 Mb NAND flash with shallow trench isolation technology by Imamiya, K., Sugiura, Y., Nakamura, H., Himeno, T., Takeuchi, K., Ikehashi, T., Kanda, K., Hosono, K., Shirota, R., Aritome, S., Shimizu, K., Hatakeyama, K., Sakui, K.

“…Higher density flash memories for mass storage are attractive for application in the audio-video field, for example, in digital cameras and for voice…”
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Design methodology of a robust ESD protection circuit for STI process 256 Mb NAND memory by Ikehashi, T., Imamiya, K., Sakui, K.

“…With the use of a device simulator, we show that an ESD protection circuit whose junction is filled with contacts is suited to a scaled STI process with thin…”
Get full text