Search Results - "Iga, R."

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  1. 1

    Thickness modulation and strain relaxation in strain-compensated InGaP/InGaP multiple-quantum-well structure grown by metalorganic molecular beam epitaxy on GaAs (100) substrate by Mitsuhara, M., Watanabe, N., Yokoyama, H., Iga, R., Shigekawa, N.

    Published in Journal of crystal growth (01-09-2016)
    “…We have investigated the structural features of a strain-compensated InGaP/InGaP multiple-quantum-well (MQW) structure on GaAs (100) substrate with a band-gap…”
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    Journal Article
  2. 2

    A 40-gb/s InGaAlAs-InAlAs MQW n-i-n Mach-Zehnder Modulator with a drive Voltage of 2.3 V by Tsuzuki, Ken, Ishibashi, Tadao, Ito, Tsuyoshi, Oku, Satoshi, Shibata, Yasuo, Ito, Toshio, Iga, Ryuzo, Kondo, Yasuhiro, Tohmori, Yuichi

    Published in IEEE photonics technology letters (01-01-2005)
    “…We have developed a traveling-wave Mach-Zehnder modulator using an n-i-n heterostructure fabricated on an InP substrate. We obtained an extremely small /spl…”
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    Journal Article
  3. 3

    Analysis of Wear-Out Degradation of a DFB Laser Using an Optical-Beam-Induced Current Monitor by Takeshita, T., Yamamoto, M., Iga, R., Sugo, M., Kondo, Y., Kato, K.

    Published in IEEE transactions on electron devices (01-08-2007)
    “…We investigated the degradation behavior of distributed feedback lasers by employing the optical-beam-induced current measurement technique. We showed that the…”
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    Journal Article
  4. 4

    1.3- \mu m 4 \,\times\, 25-Gb/s Monolithically Integrated Light Source for Metro Area 100-Gb/s Ethernet by Fujisawa, T, Kanazawa, S, Ishii, H, Nunoya, N, Kawaguchi, Y, Ohki, A, Fujiwara, N, Takahata, K, Iga, R, Kano, F, Oohashi, H

    Published in IEEE photonics technology letters (15-03-2011)
    “…A 1.3- monolithically integrated light source for metro area 100-Gb/s Ethernet is developed. Four 25-Gb/s electroabsorption modulators integrated with…”
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    Journal Article
  5. 5

    Single transverse mode operation of 1.55-μm buried heterostructure vertical-cavity surface-emitting lasers by Ohiso, Y., Okamoto, H., Iga, R., Kishi, K., Amano, C.

    Published in IEEE photonics technology letters (01-06-2002)
    “…We report the single-mode operation of 1.55-μm buried heterostructure vertical-cavity surface-emitting lasers (VCSELs) fabricated on a GaAs-AlAs distributed…”
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    Journal Article
  6. 6

    Lossless electroabsorption modulator monolithically integrated with a semiconductor optical amplifier and a passive waveguide by Asaka, K., Suzaki, Y., Kawaguchi, Y., Kondo, S., Noguchi, Y., Okamoto, H., Iga, R., Oku, S.

    Published in IEEE photonics technology letters (01-05-2003)
    “…We have developed a monolithic integrated device consisting of an electroabsorption modulator and a semiconductor optical amplifier (SOA) connected by a…”
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    Journal Article
  7. 7

    Monolithically integrated eight-channel WDM modulator with narrow channel spacing and high throughput by Suzaki, Y., Yasaka, H., Mawatari, H., Yoshino, K., Kawaguchi, Y., Oku, S., Iga, R., Okamoto, H.

    “…We demonstrate an eight-channel wavelength division multiplexing (WDM) modulator module that monolithically integrates arrayed waveguide gratings and…”
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    Journal Article
  8. 8

    Level Shifter Architecture for Dynamically Biasing Ultra-Low Voltage Subcircuits of Integrated Systems by Iga Jadue, A. R., Bastos, R. Possamai, de Paiva Leite, T. Ferreira, Rolloff, O. A., Diallo, M., Fesquet, L.

    “…Dynamically scaling down the voltage of integrated systems is an effective technique for enabling low-power operation modes. The system is partitioned into…”
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    Conference Proceeding
  9. 9

    Compact and stable electroabsorption optical modulator modules by Yoshino, K., Takeshita, T., Kotaka, I., Kondo, S., Noguchi, Y., Iga, R., Wakita, K.

    Published in Journal of lightwave technology (01-09-1999)
    “…Very compact electroabsorption optical modulator modules that demonstrate high coupling efficiency and high stability have been developed. The modules show…”
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    Journal Article
  10. 10

    Low-voltage operation of 100-Gbit/s EADFB laser array module by Kanazawa, S, Fujisawa, T, Ohki, A, Ishii, H, Nunoya, N, Kawaguchi, Y, Fujiwara, N, Takahata, K, Iga, R, Kano, F, Oohashi, H

    “…We developed a 4×25.8-Gbit/s EADFB laser array module for use as a 100-Gbit/s Ethernet transceiver. We demonstrated error-free transmission over a 10-km…”
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    Conference Proceeding
  11. 11

    Fabrication and performance of AlGaAs-GaAs distributed Bragg reflector lasers and distributed feedback lasers utilizing first-order diffraction gratings formed by a periodic groove structure by Oku, S., Ishii, T., Iga, R., Hirono, T.

    “…Distributed Bragg reflector (DBR) lasers and distributed feedback (DFB) lasers utilizing diffraction grating formed by deeply etched periodic grooves were…”
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    Journal Article
  12. 12

    High performance of 1.55-μm buried-heterostructure vertical-cavity surface-emitting lasers by Ohiso, Y., Okamoto, H., Iga, R., Kishi, K., Tateno, K., Amano, C.

    Published in IEEE photonics technology letters (01-09-2001)
    “…We report a record low threshold current of 1.55-μm vertical-cavity surface-emitting laser (VCSEL). Thin-film wafer-fusion technology enables InP-based buried…”
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    Journal Article
  13. 13

    Novel adjustment structure and method for InP-based Mach-Zehnder interferometer polarization splitter by Watanabe, K., Nasu, Y., Ohiso, Y., Iga, R.

    Published in 2015 20th Microoptics Conference (MOC) (01-10-2015)
    “…We propose a novel structure for an InP-based polarization beam splitter/combiner by employing phase shifters which allow us to adjust the properties of the TE…”
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    Conference Proceeding Journal Article
  14. 14

    1.55-μm buried-heterostructure VCSELs with InGaAsP/lnP-GaAs/AlAs DBRs on a GaAs substrate by Ohiso, Y., Okamoto, H., Iga, R., Kishi, K., Tateno, K., Amano, C.

    Published in IEEE journal of quantum electronics (01-09-2001)
    “…We demonstrate 1.55- mu m buried-heterostructure (BH) vertical-cavity surface-emitting lasers (VCSELs) on a GaAs substrate. Thin-film wafer-fusion technology…”
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    Journal Article
  15. 15

    Ultra-Compact 100 GbE Transmitter Optical Sub-Assembly for 40-km SMF Transmission by Kanazawa, S., Fujisawa, T., Nunoya, N., Ohki, A., Takahata, K., Sanjoh, H., Iga, R., Ishii, H.

    Published in Journal of lightwave technology (15-02-2013)
    “…The first ultra-compact transmitter optical sub-assembly (TOSA) has been developed for the metro-area 100 Gbit/s Ethernet (100 GbE) system. Four DFB lasers…”
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    Journal Article
  16. 16

    Double-wavelength laser array with InGaAsP/InGaAsP multiple quantum well grown by Ar ion laser-assisted metalorganic molecular beam epitaxy by YAMADA, T, IGA, R, SUGIURA, H

    Published in Applied physics letters (16-11-1992)
    “…This letter reports a laser diode array of InGaAsP/InGaAsP multiple quantum well (MQW) lasers, emitting at different wavelengths, grown by Ar ion laser…”
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    Journal Article
  17. 17

    Tunable Distributed Amplification (TDA-) DFB Laser with Asymmetric Structure by Nunoya, N., Ishii, H., Kawaguchi, Y., Iga, R., Sato, T., Fujiwara, N., Oohashi, H.

    “…The wavelengths of tunable distributed amplification (TDA) distributed feedback (DFB) lasers consisting of multiple units including an active region and a…”
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    Journal Article
  18. 18

    A Compact EADFB Laser Array Module for a Future 100-Gb/s Ethernet Transceiver by Kanazawa, S., Fujisawa, T., Ohki, A., Ishii, H., Nunoya, N., Kawaguchi, Y., Fujiwara, N., Takahata, K., Iga, R., Kano, F., Oohashi, H.

    “…A compact electroabsorption modulators integrated distributed feedback (EADFB) laser array module has been developed for 100-Gb/s Ethernet. Four 25-Gb/s EADFB…”
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    Journal Article
  19. 19

    Ammonium sulfide combined etching (ACE): an effective treatment for reducing impurities prior to MOVPE InP regrowth in a process using hydrocarbon gas reactive ion etching (RIE) by Yamamoto, N, Kishi, K, Kondo, Y, Matsumoto, S, Iga, R, Kadota, Y, Okamoto, H, Mawatari, H

    Published in Journal of crystal growth (01-09-1998)
    “…Ammonium sulfide combined etching (ACE) is a treatment carried out prior to metalorganic vapor phase epitaxy (MOVPE) regrowth of InP on a surface processed by…”
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    Journal Article
  20. 20

    Carbon reduction in GaAs films grown by laser-assisted metalorganic molecular beam epitaxy by IGA, R, SUGIURA, H, YAMADA, T, WADA, K

    Published in Applied physics letters (31-07-1989)
    “…Secondary-ion mass spectroscopy and cathodoluminescence (CL) studies were carried out on GaAs films grown by Ar+ laser-assisted metalorganic molecular beam…”
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    Journal Article