Search Results - "Iga, R."
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Thickness modulation and strain relaxation in strain-compensated InGaP/InGaP multiple-quantum-well structure grown by metalorganic molecular beam epitaxy on GaAs (100) substrate
Published in Journal of crystal growth (01-09-2016)“…We have investigated the structural features of a strain-compensated InGaP/InGaP multiple-quantum-well (MQW) structure on GaAs (100) substrate with a band-gap…”
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Journal Article -
2
A 40-gb/s InGaAlAs-InAlAs MQW n-i-n Mach-Zehnder Modulator with a drive Voltage of 2.3 V
Published in IEEE photonics technology letters (01-01-2005)“…We have developed a traveling-wave Mach-Zehnder modulator using an n-i-n heterostructure fabricated on an InP substrate. We obtained an extremely small /spl…”
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3
Analysis of Wear-Out Degradation of a DFB Laser Using an Optical-Beam-Induced Current Monitor
Published in IEEE transactions on electron devices (01-08-2007)“…We investigated the degradation behavior of distributed feedback lasers by employing the optical-beam-induced current measurement technique. We showed that the…”
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4
1.3- \mu m 4 \,\times\, 25-Gb/s Monolithically Integrated Light Source for Metro Area 100-Gb/s Ethernet
Published in IEEE photonics technology letters (15-03-2011)“…A 1.3- monolithically integrated light source for metro area 100-Gb/s Ethernet is developed. Four 25-Gb/s electroabsorption modulators integrated with…”
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5
Single transverse mode operation of 1.55-μm buried heterostructure vertical-cavity surface-emitting lasers
Published in IEEE photonics technology letters (01-06-2002)“…We report the single-mode operation of 1.55-μm buried heterostructure vertical-cavity surface-emitting lasers (VCSELs) fabricated on a GaAs-AlAs distributed…”
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6
Lossless electroabsorption modulator monolithically integrated with a semiconductor optical amplifier and a passive waveguide
Published in IEEE photonics technology letters (01-05-2003)“…We have developed a monolithic integrated device consisting of an electroabsorption modulator and a semiconductor optical amplifier (SOA) connected by a…”
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7
Monolithically integrated eight-channel WDM modulator with narrow channel spacing and high throughput
Published in IEEE journal of selected topics in quantum electronics (01-01-2005)“…We demonstrate an eight-channel wavelength division multiplexing (WDM) modulator module that monolithically integrates arrayed waveguide gratings and…”
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8
Level Shifter Architecture for Dynamically Biasing Ultra-Low Voltage Subcircuits of Integrated Systems
Published in 2018 IEEE International Symposium on Circuits and Systems (ISCAS) (27-05-2018)“…Dynamically scaling down the voltage of integrated systems is an effective technique for enabling low-power operation modes. The system is partitioned into…”
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Conference Proceeding -
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Compact and stable electroabsorption optical modulator modules
Published in Journal of lightwave technology (01-09-1999)“…Very compact electroabsorption optical modulator modules that demonstrate high coupling efficiency and high stability have been developed. The modules show…”
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10
Low-voltage operation of 100-Gbit/s EADFB laser array module
Published in 22nd IEEE International Semiconductor Laser Conference (01-09-2010)“…We developed a 4×25.8-Gbit/s EADFB laser array module for use as a 100-Gbit/s Ethernet transceiver. We demonstrated error-free transmission over a 10-km…”
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Conference Proceeding -
11
Fabrication and performance of AlGaAs-GaAs distributed Bragg reflector lasers and distributed feedback lasers utilizing first-order diffraction gratings formed by a periodic groove structure
Published in IEEE journal of selected topics in quantum electronics (01-05-1999)“…Distributed Bragg reflector (DBR) lasers and distributed feedback (DFB) lasers utilizing diffraction grating formed by deeply etched periodic grooves were…”
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12
High performance of 1.55-μm buried-heterostructure vertical-cavity surface-emitting lasers
Published in IEEE photonics technology letters (01-09-2001)“…We report a record low threshold current of 1.55-μm vertical-cavity surface-emitting laser (VCSEL). Thin-film wafer-fusion technology enables InP-based buried…”
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13
Novel adjustment structure and method for InP-based Mach-Zehnder interferometer polarization splitter
Published in 2015 20th Microoptics Conference (MOC) (01-10-2015)“…We propose a novel structure for an InP-based polarization beam splitter/combiner by employing phase shifters which allow us to adjust the properties of the TE…”
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Conference Proceeding Journal Article -
14
1.55-μm buried-heterostructure VCSELs with InGaAsP/lnP-GaAs/AlAs DBRs on a GaAs substrate
Published in IEEE journal of quantum electronics (01-09-2001)“…We demonstrate 1.55- mu m buried-heterostructure (BH) vertical-cavity surface-emitting lasers (VCSELs) on a GaAs substrate. Thin-film wafer-fusion technology…”
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Journal Article -
15
Ultra-Compact 100 GbE Transmitter Optical Sub-Assembly for 40-km SMF Transmission
Published in Journal of lightwave technology (15-02-2013)“…The first ultra-compact transmitter optical sub-assembly (TOSA) has been developed for the metro-area 100 Gbit/s Ethernet (100 GbE) system. Four DFB lasers…”
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16
Double-wavelength laser array with InGaAsP/InGaAsP multiple quantum well grown by Ar ion laser-assisted metalorganic molecular beam epitaxy
Published in Applied physics letters (16-11-1992)“…This letter reports a laser diode array of InGaAsP/InGaAsP multiple quantum well (MQW) lasers, emitting at different wavelengths, grown by Ar ion laser…”
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17
Tunable Distributed Amplification (TDA-) DFB Laser with Asymmetric Structure
Published in IEEE journal of selected topics in quantum electronics (01-11-2011)“…The wavelengths of tunable distributed amplification (TDA) distributed feedback (DFB) lasers consisting of multiple units including an active region and a…”
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18
A Compact EADFB Laser Array Module for a Future 100-Gb/s Ethernet Transceiver
Published in IEEE journal of selected topics in quantum electronics (01-09-2011)“…A compact electroabsorption modulators integrated distributed feedback (EADFB) laser array module has been developed for 100-Gb/s Ethernet. Four 25-Gb/s EADFB…”
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Journal Article -
19
Ammonium sulfide combined etching (ACE): an effective treatment for reducing impurities prior to MOVPE InP regrowth in a process using hydrocarbon gas reactive ion etching (RIE)
Published in Journal of crystal growth (01-09-1998)“…Ammonium sulfide combined etching (ACE) is a treatment carried out prior to metalorganic vapor phase epitaxy (MOVPE) regrowth of InP on a surface processed by…”
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20
Carbon reduction in GaAs films grown by laser-assisted metalorganic molecular beam epitaxy
Published in Applied physics letters (31-07-1989)“…Secondary-ion mass spectroscopy and cathodoluminescence (CL) studies were carried out on GaAs films grown by Ar+ laser-assisted metalorganic molecular beam…”
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