Search Results - "Ievtushenko, A.I."
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A Review of the some aspects for the development of ZnO based photocatalysts for a variety of applications
Published in Fìzika ì hìmìâ tverdogo tìla (Online) (28-09-2021)“…Today, one of the most important problems for humanity is the pollution of the environment with various organic compounds that worsen the health of the…”
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Journal Article -
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The study of the behavior of Al impurity in ZnO lattice by a fullerene like model
Published in Fìzika ì hìmìâ tverdogo tìla (Online) (20-04-2021)“…The fullerene like Zn32Al4O36 clusters were investigated and the oxygen interstitial Oi acceptor intrinsic defect formation energy as well as Al ionization…”
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The influence of substrate temperature on properties of Cu-Al-O films deposited using the reactive ion beam sputtering method
Published in Semiconductor physics, quantum electronics, and optoelectronics (09-10-2017)“…For the first time, Cu-Al-O films were grown using the reactive ion beam sputtering at temperatures ranging from 80 to 380 °C in 50 °C increments. Correlations…”
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4
The influence of manufacturing modes on the electrical and energy parameters of graphene/p-CdTe Schottky diodes
Published in Physica. B, Condensed matter (15-10-2023)“…The paper investigated the electrical properties of graphene/p-CdTe structures, which were distinguished by different durations of graphene films application…”
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Journal Article -
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Argon and oxygen pressure influence on the properties of NiO films deposited by magnetron sputtering in layer-by-layer growth regime
Published in Physica. B, Condensed matter (01-04-2024)“…The influence of argon and oxygen partial pressure on the structure, morphology, and optical properties of NiO films deposited on glass substrate by…”
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Journal Article -
6
Structural, vibrational and photodegradation properties of CuAl2O4 films
Published in Semiconductor physics, quantum electronics, and optoelectronics (30-06-2022)“…Cu–Al–O thin films were grown on Si (111) substrates by using the reactive ion-beam sputtering (RIBS) method within the temperature range 80 to 380 °C. The…”
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Journal Article -
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The influence of substrate temperature on the structure and optical properties of NiO thin films deposited using the magnetron sputtering in the layer-by-layer growth regime
Published in Semiconductor physics, quantum electronics, and optoelectronics (01-01-2023)“…Vanadium oxide (VO x ) thin films are promising materials, exhibiting electrical, optical, and mechanical properties highly tunable by processing and…”
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High quality ZnO films deposited by radio-frequency magnetron sputtering using layer by layer growth method
Published in Thin solid films (01-06-2010)“…Three-layered ZnO films were deposited on Si substrates by radio-frequency magnetron sputtering using layer by layer growth method. The Raman scattering…”
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Journal Article Conference Proceeding -
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The Influence of Oxygen Pressure on ZnO:Al Thin Films Properties Grown by Layer by Layer Growth Method at Magnetron Sputtering
Published in Fìzika ì hìmìâ tverdogo tìla (Online) (15-12-2015)“…The influence of oxygen pressure in the deposition chamber on the structure, morphology, optical and electrical properties of aluminum doped ZnO films…”
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Journal Article -
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Detector with High Internal Photocurrent Gain Based on ZnO:N
Published in Acta physica Polonica, A (01-05-2011)Get full text
Journal Article