Search Results - "Ichimura, Aiko"
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Deep-P encapsulated 4H-SiC trench MOSFETs with ultra low RonQgd
Published in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01-05-2018)“…Deep-P encapsulated 4H-SÌC trench MOSFET was proposed. The fabricated MOSFET with a blocking voltage of 1800V demonstrated a ultra low RonQgd of 133 nCmΩ. The…”
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Conference Proceeding -
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Suppression of Bipolar Degradation in Deep-P Encapsulated 4H-SiC Trench MOSFETs up to Ultra-High Current Density
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01-05-2019)“…The bipolar degradation of Deep-p encapsulated 4H-SiC trench MOSFETs was investigated by using the pulse-current conduction system up to ultra-high current…”
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Conference Proceeding