Search Results - "Ichimura, Aiko"

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    Deep-P encapsulated 4H-SiC trench MOSFETs with ultra low RonQgd by Ebihara, Yasuhiro, Ichimura, Aiko, Mitani, Shuhei, Noborio, Masato, Takeuchi, Yuichi, Mizuno, Shoji, Yamamoto, Toshimasa, Tsuruta, Kazuhiro

    “…Deep-P encapsulated 4H-SÌC trench MOSFET was proposed. The fabricated MOSFET with a blocking voltage of 1800V demonstrated a ultra low RonQgd of 133 nCmΩ. The…”
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    Conference Proceeding
  2. 2

    Suppression of Bipolar Degradation in Deep-P Encapsulated 4H-SiC Trench MOSFETs up to Ultra-High Current Density by Ebihara, Yasuhiro, Uehara, Junichi, Ichimura, Aiko, Mitani, Shuhei, Noborio, Masato, Takeuchi, Yuichi, Tsuruta, Kazuhiro

    “…The bipolar degradation of Deep-p encapsulated 4H-SiC trench MOSFETs was investigated by using the pulse-current conduction system up to ultra-high current…”
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    Conference Proceeding