Search Results - "Ibbetson, P"

Refine Results
  1. 1

    Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors by Ibbetson, J. P., Fini, P. T., Ness, K. D., DenBaars, S. P., Speck, J. S., Mishra, U. K.

    Published in Applied physics letters (10-07-2000)
    “…The origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field effect transistors is examined theoretically and experimentally. Based…”
    Get full text
    Journal Article
  2. 2

    Very-high power density AlGaN/GaN HEMTs by Yi-Feng Wu, Kapolnek, D., Ibbetson, J.P., Parikh, P., Keller, B.P., Mishra, U.K.

    Published in IEEE transactions on electron devices (01-03-2001)
    “…Research work focusing on the enhancement of large-signal current-voltage (I-V) capabilities has resulted in significant performance improvement for AlGaN/GaN…”
    Get full text
    Journal Article
  3. 3

    High-performance (Al,Ga)N-based solar-blind ultraviolet p–i–n detectors on laterally epitaxially overgrown GaN by Parish, G., Keller, S., Kozodoy, P., Ibbetson, J. P., Marchand, H., Fini, P. T., Fleischer, S. B., DenBaars, S. P., Mishra, U. K., Tarsa, E. J.

    Published in Applied physics letters (12-07-1999)
    “…Solar-blind ultraviolet photodiodes with a band-edge wavelength of 285 nm were fabricated on laterally epitaxially overgrown GaN grown by metalorganic chemical…”
    Get full text
    Journal Article
  4. 4

    Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition by Marchand, H., Wu, X. H., Ibbetson, J. P., Fini, P. T., Kozodoy, P., Keller, S., Speck, J. S., DenBaars, S. P., Mishra, U. K.

    Published in Applied physics letters (10-08-1998)
    “…Extended defect reduction in GaN grown by lateral epitaxial overgrowth (LEO) on large-area SiO2/GaN/Al2O3 wafers by low pressure metalorganic chemical vapor…”
    Get full text
    Journal Article
  5. 5

    Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition by Hansen, P. J., Strausser, Y. E., Erickson, A. N., Tarsa, E. J., Kozodoy, P., Brazel, E. G., Ibbetson, J. P., Mishra, U., Narayanamurti, V., DenBaars, S. P., Speck, J. S.

    Published in Applied physics letters (04-05-1998)
    “…A combination of atomic force microscopy and scanning capacitance microscopy was used to investigate the relationship between the surface morphology and the…”
    Get full text
    Journal Article
  6. 6
  7. 7

    Self-assembled ErAs islands in GaAs: Growth and subpicosecond carrier dynamics by Kadow, C., Fleischer, S. B., Ibbetson, J. P., Bowers, J. E., Gossard, A. C., Dong, J. W., Palmstrøm, C. J.

    Published in Applied physics letters (29-11-1999)
    “…We report the growth of self-assembled ErAs islands embedded in GaAs by molecular beam epitaxy. The nucleation of ErAs on GaAs occurs in an island growth mode…”
    Get full text
    Journal Article
  8. 8
  9. 9

    Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth by Chichibu, S. F., Marchand, H., Minsky, M. S., Keller, S., Fini, P. T., Ibbetson, J. P., Fleischer, S. B., Speck, J. S., Bowers, J. E., Hu, E., Mishra, U. K., DenBaars, S. P., Deguchi, T., Sota, T., Nakamura, S.

    Published in Applied physics letters (08-03-1999)
    “…The emission mechanisms of bulk GaN and InGaN quantum wells (QWs) were studied by comparing their optical properties as a function of threading dislocation…”
    Get full text
    Journal Article
  10. 10
  11. 11

    High-quality coalescence of laterally overgrown GaN stripes on GaN/sapphire seed layers by Fini, P., Zhao, L., Moran, B., Hansen, M., Marchand, H., Ibbetson, J. P., DenBaars, S. P., Mishra, U. K., Speck, J. S.

    Published in Applied physics letters (20-09-1999)
    “…We have characterized GaN stripes grown by lateral epitaxial overgrowth on large-area (2 in.) SiO2/GaN/Al2O3 wafers by low-pressure metalorganic chemical vapor…”
    Get full text
    Journal Article
  12. 12
  13. 13

    High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy by Elsass, C. R., Smorchkova, I. P., Heying, B., Haus, E., Fini, P., Maranowski, K., Ibbetson, J. P., Keller, S., Petroff, P. M., DenBaars, S. P., Mishra, U. K., Speck, J. S.

    Published in Applied physics letters (07-06-1999)
    “…High quality AlGaN/GaN heterostructures have been grown by radio-frequency plasma-assisted molecular beam epitaxy on n-type GaN templates grown on sapphire by…”
    Get full text
    Journal Article
  14. 14
  15. 15

    Cathodoluminescence mapping of epitaxial lateral overgrowth in gallium nitride by Rosner, S. J., Girolami, G., Marchand, H., Fini, P. T., Ibbetson, J. P., Zhao, L., Keller, S., Mishra, U. K., DenBaars, S. P., Speck, J. S.

    Published in Applied physics letters (05-04-1999)
    “…The dislocation arrangements in gallium nitride (GaN) films prepared by lateral epitaxial overgrowth (LEO) have been studied by cathodoluminescence mapping and…”
    Get full text
    Journal Article
  16. 16
  17. 17

    Determination of tilt in the lateral epitaxial overgrowth of GaN using X-ray diffraction by Fini, P, Marchand, H, Ibbetson, J.P, DenBaars, S.P, Mishra, U.K, Speck, J.S

    Published in Journal of crystal growth (01-02-2000)
    “…Tilt that occurs during the lateral overgrowth of GaN over an SiO 2 mask from 〈1 1̄ 0 0〉 GaN-oriented stripe openings is systematically measured using X-ray…”
    Get full text
    Journal Article
  18. 18
  19. 19
  20. 20

    Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition by Marchand, H., Ibbetson, J.P., Fini, P.T., Keller, S., DenBaars, S.P., Speck, J.S., Mishra, U.K.

    Published in Journal of crystal growth (01-12-1998)
    “…We investigate the effect of growth temperature (1015–1100°C), growth duration (3–90 min), and pattern geometry on the lateral epitaxial overgrowth (LEO) of…”
    Get full text
    Journal Article Conference Proceeding