Search Results - "Ibbetson, P"
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Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
Published in Applied physics letters (10-07-2000)“…The origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field effect transistors is examined theoretically and experimentally. Based…”
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Very-high power density AlGaN/GaN HEMTs
Published in IEEE transactions on electron devices (01-03-2001)“…Research work focusing on the enhancement of large-signal current-voltage (I-V) capabilities has resulted in significant performance improvement for AlGaN/GaN…”
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3
High-performance (Al,Ga)N-based solar-blind ultraviolet p–i–n detectors on laterally epitaxially overgrown GaN
Published in Applied physics letters (12-07-1999)“…Solar-blind ultraviolet photodiodes with a band-edge wavelength of 285 nm were fabricated on laterally epitaxially overgrown GaN grown by metalorganic chemical…”
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4
Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition
Published in Applied physics letters (10-08-1998)“…Extended defect reduction in GaN grown by lateral epitaxial overgrowth (LEO) on large-area SiO2/GaN/Al2O3 wafers by low pressure metalorganic chemical vapor…”
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5
Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition
Published in Applied physics letters (04-05-1998)“…A combination of atomic force microscopy and scanning capacitance microscopy was used to investigate the relationship between the surface morphology and the…”
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6
The pulsations of PG 1351+489
Published in Monthly notices of the Royal Astronomical Society (01-08-2011)“…PG 1351+489 is one of the 20 DBVs - pulsating helium-atmosphere white dwarf stars - known and has the simplest power spectrum for this class of star, making it…”
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7
Self-assembled ErAs islands in GaAs: Growth and subpicosecond carrier dynamics
Published in Applied physics letters (29-11-1999)“…We report the growth of self-assembled ErAs islands embedded in GaAs by molecular beam epitaxy. The nucleation of ErAs on GaAs occurs in an island growth mode…”
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8
Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy
Published in Applied physics letters (07-02-2000)Get full text
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9
Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth
Published in Applied physics letters (08-03-1999)“…The emission mechanisms of bulk GaN and InGaN quantum wells (QWs) were studied by comparing their optical properties as a function of threading dislocation…”
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10
Whole Earth Telescope observations of the hot helium atmosphere pulsating white dwarf EC 20058−5234
Published in Monthly notices of the Royal Astronomical Society (01-06-2008)“…We present the analysis of a total of 177 h of high-quality optical time-series photometry of the helium atmosphere pulsating white dwarf (DBV) EC 20058−5234…”
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11
High-quality coalescence of laterally overgrown GaN stripes on GaN/sapphire seed layers
Published in Applied physics letters (20-09-1999)“…We have characterized GaN stripes grown by lateral epitaxial overgrowth on large-area (2 in.) SiO2/GaN/Al2O3 wafers by low-pressure metalorganic chemical vapor…”
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12
The effect of magnetic fields on γ-ray bursts inferred from multi-wavelength observations of the burst of 23 January 1999
Published in Nature (London) (01-04-1999)“…Gamma-ray bursts (GRBs) are thought to arise when an extremely relativistic outflow of particles from a massive explosion (the nature of which is still…”
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13
High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy
Published in Applied physics letters (07-06-1999)“…High quality AlGaN/GaN heterostructures have been grown by radio-frequency plasma-assisted molecular beam epitaxy on n-type GaN templates grown on sapphire by…”
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14
A Whole Earth Telescope campaign on the pulsating subdwarf B binary system PG 1336−018 (NY Vir)
Published in Monthly notices of the Royal Astronomical Society (01-11-2003)“…We present results from a multisite (‘Whole Earth Telescope’) photometric campaign on PG 1336−018, the close eclipsing binary system containing a pulsating…”
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15
Cathodoluminescence mapping of epitaxial lateral overgrowth in gallium nitride
Published in Applied physics letters (05-04-1999)“…The dislocation arrangements in gallium nitride (GaN) films prepared by lateral epitaxial overgrowth (LEO) have been studied by cathodoluminescence mapping and…”
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16
Whole Earth Telescope observations of the hot helium atmosphere pulsating white dwarf EC20058-5234
Published in Monthly notices of the Royal Astronomical Society (11-06-2008)“…We present the analysis of a total of 177h of high-quality optical time-series photometry of the helium atmosphere pulsating white dwarf (DBV) EC20058-5234…”
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17
Determination of tilt in the lateral epitaxial overgrowth of GaN using X-ray diffraction
Published in Journal of crystal growth (01-02-2000)“…Tilt that occurs during the lateral overgrowth of GaN over an SiO 2 mask from 〈1 1̄ 0 0〉 GaN-oriented stripe openings is systematically measured using X-ray…”
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18
DQ Herculis in Profile: Whole Earth Telescope Observations and Smoothed Particle Hydrodynamics Simulations of an Edge-on Cataclysmic Variable System
Published in The Astrophysical journal (20-11-2005)“…The old nova DQ Herculis was the Whole Earth Telescope Northern Hemisphere target for the 1997 July campaign and was observed on four nights with the SARA 0.9…”
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Fluctuation Controlled Hopping of Bound Magnetic Polarons in ErAs:GaAs Nanocomposites
Published in Physical review letters (25-01-1999)Get full text
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Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition
Published in Journal of crystal growth (01-12-1998)“…We investigate the effect of growth temperature (1015–1100°C), growth duration (3–90 min), and pattern geometry on the lateral epitaxial overgrowth (LEO) of…”
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