Search Results - "Ianno, N."

Modeling Changes in Measured Conductance of Thin Boron Carbide Semiconducting Films Under Irradiation by Peterson, George G., Yongqiang Wang, Ianno, N. J., Nastasi, Michael

“…Semiconducting, p-type, amorphous partially dehydrogenated boron carbide films (a-B 10 C 2+x :H y ) were deposited utilizing plasma enhanced chemical vapor…”
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Development of boron calibration via hybrid comparator method in prompt gamma activation analysis by Artnak, E. J., Biegalski, S. R., Landsberger, S., Ianno, N. J., Alexander, D., Byers, M. F.

“…The prompt gamma activation analysis (PGAA) facility at the Nuclear Engineering Teaching Laboratory at The University of Texas at Austin was utilized to…”
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Combined optical and acoustical method for determination of thickness and porosity of transparent organic layers below the ultra-thin film limit by Rodenhausen, K B, Kasputis, T, Pannier, A K, Gerasimov, J Y, Lai, R Y, Solinsky, M, Tiwald, T E, Wang, H, Sarkar, A, Hofmann, T, Ianno, N, Schubert, M

“…Analysis techniques are needed to determine the quantity and structure of materials composing an organic layer that is below an ultra-thin film limit and in a…”
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Epoxy catalyzed sol–gel method for pinhole-free pyrite FeS2 thin films by Kment, S., Kmentova, H., Sarkar, A., Soukup, R.J., Ianno, N.J., Sekora, D., Olejnicek, J., Ksirova, P., Krysa, J., Remes, Z., Hubicka, Z.

“…•Photoactive pyrite thin films can be fabricated by a novel sol–gel route.•The pyrite films are pinhole-free, phase-pure and without contaminants.•The pyrite…”
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A non-vacuum process for preparing nanocrystalline CuIn1-xGaxSe2 materials involving an open-air solvothermal reaction by OLEJNICEK, J, KAMLER, C. A, SOUKUP, R. J, MIRASANO, A, MARTINEZ-SKINNER, A. L, INGERSOLL, M. A, EXSTROM, C. L, DARVEAU, S. A, HUGUENIN-LOVE, J. L, DIAZ, M, IANNO, N. J

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Formation of CuIn1−xAlxSe2 thin films studied by Raman scattering by Olejníček, J., Kamler, C.A., Darveau, S.A., Exstrom, C.L., Slaymaker, L.E., Vandeventer, A.R., Ianno, N.J., Soukup, R.J.

“…CuIn1−xAlxSe2 (CIAS) thin films (x=0.06, 0.18, 0.39, 0.64, 0.80 and 1) with thicknesses of approximately 1μm were formed by the selenization of sputtered…”
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Thin films of a-SiGe:H with device quality properties prepared by a novel hollow cathode deposition technique by Soukup, R.J., Ianno, N.J., Darveau, Scott A., Exstrom, Christopher L.

“…Using a novel hollow cathode plasma-jet reactive sputtering system in which an intense plasma, ignited in an Ar/H 2 flow, is directed through silicon and…”
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Micelle-assisted bilayer formation of cetyltrimethylammonium bromide thin films studied with combinatorial spectroscopic ellipsometry and quartz crystal microbalance techniques by Rodenhausen, K.B., Guericke, M., Sarkar, A., Hofmann, T., Ianno, N., Schubert, M., Tiwald, T.E., Solinsky, M., Wagner, M.

“…We report on a combinatorial approach to study the formation of ultra-thin organic films using in-situ spectroscopic ellipsometry and quartz crystal…”
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Thermochromic VO2 sputtered by control of a vanadium-oxygen emission ratio by Dillon, R.O., Le, K., Ianno, N.

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Dielectric function of thin metal films by combined in situ transmission ellipsometry and intensity measurements by Pribil, G.K., Johs, B., Ianno, N.J.

“…The dielectric function and layer thicknesses of thin metal films are simultaneously determined by combined in situ spectroscopic ellipsometric (SE)…”
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Thin films of GeC deposited using a unique hollow cathode sputtering technique by Schrader, J.S., Huguenin-Love, J.L., Soukup, R.J., Ianno, N.J., Exstrom, C.L., Darveau, S.A., Udey, R.N., Dalal, V.L.

“…Experimental results on thin films of the new material Ge x C 1− x , deposited by a unique dual plasma hollow cathode sputtering technique are presented here…”
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Analysis of semiconductor thin films deposited using a hollow cathode plasma torch by Soukup, R.J., Ianno, N.J., Huguenin-Love, J.L.

“…The hollow cathode plasma torch has been used for several years. One of the major applications has been the deposition of dielectric thin films. However, this…”
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Thin films formed by selenization of CuInxB1-x precursors in Se vapor by KAMLER, C. A, SOUKUP, R. J, IANNO, N. J, HUGUENIN-LOVE, J. L, OLEJNICEK, J, DARVEAU, S. A, EXSTROM, C. L

“…Previous attempts in producing light absorbing materials with bandgaps near the 1.37 eV efficiency optimum have included the partial substitution of gallium or…”
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Aluminum oxynitride coatings for oxidation resistance of epoxy films by Ianno, N.J, Enshashy, H, Dillon, R.O

“…Aluminum nitride (AlN) and aluminum oxynitride (AlNO) films were sputter deposited onto epoxy coated silicon substrates. The films were characterized by:…”
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Investigation of the rf and dc hollow cathode plasma-jet sputtering systems for the deposition of silicon thin films by Hubička, Z., Pribil, G., Soukup, R.J., Ianno, N.J.

“…Both rf and dc hollow cathode plasma-jet sputtering systems have been investigated for thin film semiconductor deposition. These systems were studied as a…”
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The effect of deposition conditions on the atomic oxygen induced degradation of MgF2 anti-reflective coatings by Ianno, N J, Speckman, D M

“…Spacecraft orbiting below about 800 km are exposed to a high flux of atomic oxygen (AO) that can severely degrade surface materials. Of particular concern are…”
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Chemical bath deposition (CBD) of iron sulfide thin films for photovoltaic applications, crystallographic and optical properties by Prabukanthan, P, Soukup, R J, Ianno, N J, Sarkar, A, Kment, S, Kmentova, H, Kamler, C A, Exstrom, C L, Olejnicek, J, Darveau, S A

“…A low temperature chemical deposition method has been developed to deposit iron/sulfur thin films onto soda lime glass substrates. The chemical bath deposition…”
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Interface polarization coupling in piezoelectric-semiconductor ferroelectric heterostructures by Voora, Venkata M., Hofmann, T., Brandt, M., Lorenz, M., Grundmann, M., Ashkenov, N., Schmidt, H., Ianno, N., Schubert, M.

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Sputter deposition of high resistivity boron carbide by Ahmad, Ahmad A, Ianno, N.J, Hwang, Seong-Don, Dowben, P.A

“…We have succeeded in the rf magnetron sputter deposition of high resistivity boron carbide (B 1− x C x ). This has been accomplished by the sputter depositing…”
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Control of etch depth in patterned semiconductor substrates using real time spectroscopic ellipsometry by Cho, S.-J., Snyder, P.G., Ianno, N.J., Herzinger, C.M., Johs, B.

“…Etch depth into bulk Si wafers was determined in real time using spectroscopic ellipsometry (SE). The mechanism that allows this is lateral interference,…”
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