Search Results - "Iakovleva, I N"

Matrix Element Architecture Based on a Mercury–Cadmium–Tellurium Ternary Solution with Reduced Dark Current by Iakovleva, N. I.

“…A ternary solution of mercury–cadmium–telluride (MCT, HgCdTe) is one of the few semiconductor materials used to design photodiodes with high parameters. An…”
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Advanced Architecture of a CdHgTe Photodiode for Detection of Weak Infrared Radiation by Iakovleva, N. I.

“…Dark currents in advanced architecture of a photodiode matrix based on a CdHgTe ternary compound designed to record weak infrared radiation are analyzed. The…”
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The Study of Dark Currents in HgCdTe Heterostructure Photodiodes by Iakovleva, N. I.

“…Dark current is the main factor that influences photodiode performance. It should be minimal to reduce noise and ensure a high level of photoelectric…”
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Effect of Surface Recombination on the Parameters of Photodiodes Based on HgCdTe Semiconductor Structures by Iakovleva, N. I.

“…The surface recombination rates for p -type HgCdTe layers with different dopant concentrations and trap densities N t are calculated. It is shown that, at the…”
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Focal Plane Arrays Based on the Binary and Ternary Antimonide-Group Homo- and Heterostructures by Boltar, K. O., Lopuhin, A. A., Vlasov, P. V., Iakovleva, N. I.

“…We report on the investigations of focal plane arrays for mid-wave infrared radiation detection based on antimonide multilayers with InSb, Al x In 1 –  x Sb,…”
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Photodetector Devices Based on p–i–n and Barrier Structures of the Mid-Wave IR Spectrum Range by Boltar, K. O., Iakovleva, N. I., Lopukhin, A. A., Vlasov, P. V.

“…Multilayer structures based on semiconductor materials of the antimonide group with InSb and Al x In 1 –  x Sb absorbing layers, including structures with an…”
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Modern Photodetector IR-Modules by Boltar, K. O., Burlakov, I. D., Iakovleva, N. I., Vlasov, P. V., Lazarev, P. S.

“…In recent years, there has been a rapid improvement in photonics products due to the use of multilayer heterostructures grown on the basis of advanced…”
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Investigation of spectral dependences of the absorption coefficient in InGaAs layers by Iakovleva, N. I., Nikonov, A. V.

“…Values of the absorption coefficient of InGaAs structures grown by means of gaseous-phase epitaxy from metaloranic compounds have been studied and calculated…”
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Experimental investigation and calculation of the spectral dependence of the absorption coefficient of single-layer epitaxial HgCdTe structures by Iakovleva, N. I., Nikonov, A. V., Shabarov, V. V.

“…The absorption coefficient of HgCdTe structures grown by the methods of liquid-phase epitaxy (LPE) and metalorganic chemical vapor deposition (MOCVD) is…”
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Temperature Dependence of Current in a InAsSb-Based p–n Photodiode by Iakovleva, N. I., Kovshov, V. S.

“…The temperature dependence of the dark current in InAsSb-based p – n photodiodes detecting radiation in the medium-wave infrared (MWIR) region have been…”
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Barrier рBn-Structure Based on GaAsSb/AlAsSb/InAsSb for Detection of IR Radiation in the Spectral Range of 3.1–4.2 µm by Vaganova, P. A., Iakovleva, N. I.

“…— In the study, a new р B n -architecture based on a GaAsSb/AlAsSb/InAsSb heterostructure of III‒V group materials with an n -type AlAsSb barrier layer, an n…”
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Short-wavelength infrared array avalanche photodetectors on the basis of InGaAs heteroepitaxial structures by Iakovleva, N. I., Boltar, K. O., Sednev, M. V., Patrashin, A. I., Irodov, N. A.

“…SWIR ADP 320 × 256 FPAs based on p – i – n photodiodes in InGaAs heterostructures have been developed and investigated. The typical InGaAs/InP PIN…”
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Temperature dependence of diffusion length in MCT epitaxial layers by Nikiforov, I. A., Nikonov, A. V., Boltar, K. O., Iakovleva, N. I.

“…The temperature dependence of the minority charge carriers diffusion length in the active photosensitive layer of a matrix photodetector based on MCT…”
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Influence of Indirect Transitions on Optical Characteristics of A3B5 Heteroepitaxial Layers by Nikonov, A. V., Iakovleva, N. I.

“…The influence of indirect transitions of Г-L and Г-Х types in the Brillouin zone on optical and electrophysical characteristics of heteroepitaxial layers of А…”
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Analysis of Current–Voltage Characteristics in UV AlGaN Heterostructure FPAs by Iakovleva, N. I., Nikonov, A.V., Boltar, K. O., Sednev, M. V.

“…UV visible-blind and solar-blind 320 × 256 photodiode arrays based on Al x Ga 1 – x N heteroepitaxial structures (AlGaN HES) and sensitive in the…”
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Multi-Row Photodetectors for the Short Wavelength IR Region Based on HgCdTe Heteroepitaxial Structures by Iakovleva, N. I., Boltar, K. O., Nikonov, A. V., Egorov, A. V.

“…Parameters of multi-row photodetectors (PDs) based on HgCdTe heteroepitaxial structures of different formats, including 288 × 4, 480 × 6, 576 × 4, and 576 × 6,…”
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Savitzky–Golay filtering of the spectral sensitivity of photodetector arrays by Nikonov, A. V., Davletshin, R. V., Iakovleva, N. I., Lazarev, P. S.

“…Recalculation of spectral sensitivity of photodetector arrays with a relatively low signal-to-noise ratio necessitates the analysis of noise filtering with…”
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Analysis of characteristics of photodetectors based on InGaAs heteroepitaxial structures for 3D imaging by Iakovleva, N. I., Boltar, K. O., Sednev, M. V., Nikonov, A. V.

“…The 320 × 256 focal plane arrays based on р + -B–n - N + tetralayer heterostructures with a wide-gap barrier layer have been investigated. The heterostructures…”
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Clinical immunological disorders in children from various observation cohorts exposed to radiation factor during various stages of oncogenesis by Baleva, L S, Iakovleva, I N, Sipiagina, A E, Karakhan, N M, Karpeeva, E E, Buiankin, V M, Suskova, V S

“…The immune status disorders and features depending on the radiation impact type in various cohorts of radiation observations long after the Chernobyl (CNPP)…”
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Barrier ÑBn-Structure Based on GaAsSb/AlAsSb/InAsSb for Detection of IR Radiation in the Spectral Range of 3.1-4.2 m by Vaganova, P. A, Iakovleva, N. I

“…In the study, a new ÑBn-architecture based on a GaAsSb/AlAsSb/InAsSb heterostructure of IIIâV group materials with an n-type AlAsSb barrier layer, an n-type…”
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